US5384288A
Expired / Lapsed
US
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Method of forming a planarized insulation layer
Assignee: Texas Instruments Inc
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Filing: 1994-02-01
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Granted: 1995-01-24
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Expires: 2014-02-01
Abstract
Abstract A method for forming a planar insulating layer over the surface of a semiconductor workpiece 8 which includes at least one low region 13 is discussed herein. The first step is to form a layer of blocking material 14 on the surface of the workpiece 8. A first material region 20 is then formed in the low region 13 and an insulating layer 21 is formed over the surface of the workpiece 8 including the first material region 20. The workpiece 8 is then heated in the presence of an active ambient such that the insulation layer 21 reflows and also so that the first material 20 region reacts with the active ambient to create an internal stress in said insulation layer 21. Other systems and methods are also disclosed.
Inventors
- 👤 Peter S. Ying
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 03:08
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/10; H10W10/17; H10W20/00; H10W20/40; H10W20/45; H10W20/47; H10W20/48; Y; Y10; Y10S; Y10S148/00; Y10S148/133
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
112 words
A method for forming a planar insulating layer over the surface of a semiconductor workpiece, comprising the steps of: providing a semiconductor workpiece, said workpiece including at least two elevated regions separated by at least one low region; forming a layer of blocking material on the surface of said workpiece: forming a first material region over said low region; forming an insulating layer over the surface of said workpiece including said first material region; heating said workpiece in the presence of a reactive ambient such that said insulation layer reflows and such that said first material region reacts with said reactive ambient to expand said first material by forming an insulation layer.
Claim 2
Independent Claim
112 words
A method for forming a planar insulating layer over the surface of a semiconductor workpiece, comprising the steps of: providing a semiconductor workpiece, said workpiece including at least two elevated regions separated by at least one low region; forming a layer of blocking material on the surface of said workpiece: forming a first material region over said low region; forming an insulating layer over the surface of said workpiece including said first material region; heating said workpiece in the presence of a reactive ambient such that said insulation layer reflows and such that said first material region reacts with said reactive ambient to expand said first material by forming an insulation layer.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein said step of forming an insulating layer comprises the step of forming a layer of borophosphosilicate glass.
Claim 4
Dependent Claim
22 words
The method of claim 1, wherein said step of forming a first material region comprises the step of forming a polysilicon region.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said active ambient comprises steam.
Claim 6
Dependent Claim
23 words
The method of claim 1, wherein said step of forming a layer of blocking material comprises the step of forming a nitride layer.
Claim 7
Dependent Claim
25 words
The method of claim 1, wherein said step of heating comprises the step of heating said workpiece to between about 700 and 900 degrees C.
Claim 8
Dependent Claim
23 words
The method of claim 1, and further comprising the step of forming a second insulating region prior to forming said first material layer.
Claim 9
Dependent Claim
25 words
The method of claim 1, and further comprising the step of forming a second material region subsequent to said step of forming an insulating layer.
Claim 10
Dependent Claim
24 words
The method of claim 1, and further comprising the step of performing an etch back subsequent to said step of forming an insulating layer.
Claim 11
Dependent Claim
20 words
The method of claim 1, and further comprising applying an external pressure to said workpiece while performing said heating step.
Claim 12
Dependent Claim
23 words
The method of claim 1, and further comprising the step of adding an impurity to said insulating layer prior to said heating step.
Claim 13
Dependent Claim
12 words
The method of claim 1, wherein said elevated regions comprise gate stacks.
Claim 14
Dependent Claim
12 words
The method of claim 1, wherein said low region comprises a trench.
Claim 15
Independent Claim
112 words
A method for forming a planar insulating layer comprising the steps of: providing a semiconductor workpiece including at least two elevated regions separated by a low region; forming a nitride layer over the surface of said workpiece; forming an oxide layer over said nitride layer; forming a first layer of borophosphosilicate glass over said nitride layer; forming a polysilicon region in said low region; forming a second layer of borophosphosilicate glass over the surface of said workpiece including said polysilicon region; heating said workpiece in a steam ambient such that said first and second borophosphosilicate glass layers reflow and such that said polysilicon region reacts with said steam to create silicon dioxide.
Claim 16
Independent Claim
112 words
A method for forming a planar insulating layer comprising the steps of: providing a semiconductor workpiece including at least two elevated regions separated by a low region; forming a nitride layer over the surface of said workpiece; forming an oxide layer over said nitride layer; forming a first layer of borophosphosilicate glass over said nitride layer; forming a polysilicon region in said low region; forming a second layer of borophosphosilicate glass over the surface of said workpiece including said polysilicon region; heating said workpiece in a steam ambient such that said first and second borophosphosilicate glass layers reflow and such that said polysilicon region reacts with said steam to create silicon dioxide.
Claim 17
Dependent Claim
18 words
The method of claim 14 wherein said oxide layer is formed by the paralysis and decomposition of tetraethooxysilane.
Claim 18
Dependent Claim
25 words
The method of claim 14, and further comprising the step of adding an impurity to said second borophosphosilicate glass layer prior to said heating step.
Claim 19
Dependent Claim
18 words
The method of claim 16 wherein said step of adding an impurity comprises the step of implanting arsenic.
Claim 20
Dependent Claim
20 words
The method of claim 14, and further comprising applying an external pressure to said workpiece while performing said heating step.
Claim 21
Dependent Claim
12 words
The method of claim 14, wherein said low region comprises a trench.
Claim 22
Independent Claim
107 words
A method for forming a planar insulating layer comprising the steps of: providing a semiconductor workpiece including at least one trench region; forming a nitride layer over the surface of said workpiece; forming an oxide layer over said nitride layer; forming a first layer of borophosphosilicate glass over said nitride layer; forming a polysilicon region in said trench region; forming a second layer of borophosphosilicate glass over the surface of said workpiece including said polysilicon region; heating said workpiece in a steam ambient such that said first and second borophosphosilicate glass layers reflow and such that said polysilicon region reacts with said steam to create silicon dioxide.
Claim 23
Independent Claim
107 words
A method for forming a planar insulating layer comprising the steps of: providing a semiconductor workpiece including at least one trench region; forming a nitride layer over the surface of said workpiece; forming an oxide layer over said nitride layer; forming a first layer of borophosphosilicate glass over said nitride layer; forming a polysilicon region in said trench region; forming a second layer of borophosphosilicate glass over the surface of said workpiece including said polysilicon region; heating said workpiece in a steam ambient such that said first and second borophosphosilicate glass layers reflow and such that said polysilicon region reacts with said steam to create silicon dioxide.
Claim 24
Dependent Claim
18 words
The method of claim 20 wherein said oxide layer is formed by the paralysis and decomposition of tetraethooxysilane.
Claim 25
Dependent Claim
25 words
The method of claim 20, and further comprising the step of adding an impurity to said second borophosphosilicate glass layer prior to said heating step.
Claim 26
Dependent Claim
18 words
The method of claim 22 wherein said step of adding an impurity comprises the step of implanting arsenic.
Claim 27
Dependent Claim
20 words
The method of claim 20, and further comprising applying an external pressure to said workpiece while performing said heating step.
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