US4982250A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Mosture barrier for floating gate transistors
Assignee: Motorola Solutions Inc
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Filing: 1989-01-04
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Granted: 1991-01-01
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Expires: 2009-01-04
Abstract
Abstract A floating gate device has a control gate and a floating gate. The floating gate is for charging to set a logic state therein. Moisture is a problem in causing the floating gate to either lose its charge or becoming charged to the wrong state. A thin nitride layer deposited over the control gate and along the sides of the floating gate and control gate as a moisture barrier. This nitride layer is sufficiently thin so as to provide only insignificant attenuation of ultra-violet light used to neutralize the charge state of the floating gate. This nitride layer is not used as a passivation layer so that the desirable phoshosilicate glass (PSG) can be used for passivation.
Inventors
- 👤 II Peter N. Manos
- 👤 Roger S. Countryman, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:47
CPC Classifications
H; H10; H10W; H10W42/00; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
144 words
A device structure of a transistor in an active region of a semiconductor substrate at a stage in processing, the active region being bounded by a field oxide in the substrate, comprising: a first layer of polysilicon covering an intermediate portion of the active region leaving first and second uncovered portions of the active region on opposite sides of the first layer; a first insulator layer between the first layer and the active region; a second insulator layer over the first layer of polysilicon; a second layer of polysilicon over and substantially coterminous with the first layer of polysilicon over the active region; a layer of nitride over substantially all of the active region, said layer of nitride being not greater than about 200 Angstroms thick; and a third insulator layer over the layer of nitride and the semiconductor substrate outside the active region.
Claim 2
Independent Claim
144 words
A device structure of a transistor in an active region of a semiconductor substrate at a stage in processing, the active region being bounded by a field oxide in the substrate, comprising: a first layer of polysilicon covering an intermediate portion of the active region leaving first and second uncovered portions of the active region on opposite sides of the first layer; a first insulator layer between the first layer and the active region; a second insulator layer over the first layer of polysilicon; a second layer of polysilicon over and substantially coterminous with the first layer of polysilicon over the active region; a layer of nitride over substantially all of the active region, said layer of nitride being not greater than about 200 Angstroms thick; and a third insulator layer over the layer of nitride and the semiconductor substrate outside the active region.
Claim 3
Dependent Claim
165 words
The device structure of claim 1 wherein the first and second layers of polysilicon have first and second sides, said device structure further comprising: a first sidewall spacer having a vertical dimension and a horizontal dimension and adjacent to the first side of the first and second layers of polysilicon and covering a portion of the first uncovered portion of the active region, said first sidewall spacer being of a material and of such vertical dimension to prevent implanted ions from reaching said portion of the active region covered by the first sidewall spacer; and a second sidewall spacer having a vertical dimension and a horizontal dimension and adjacent to the second side of the first and second layers of polysilicon and covering a portion of the second uncovered portion of the active region, said second sidewall spacer being of a material and of such vertical dimension to prevent implanted ions from reaching said portion of the active region covered by the second sidewall spacer.
Claim 4
Dependent Claim
46 words
The device structure of claim 2 wherein: the first sidewall spacer is between the first side of the first and second layers and the nitride layer; and the second sidewall spacer is between the second side of the first and second layers and the nitride layer.
Claim 5
Dependent Claim
58 words
The device structure of claim 2 wherein: a first portion of the nitride layer is between the first sidewall spacer and the first side of the first and second layers of polysilicon; and a second portion of the nitride layer is between the second sidewall spacer and the second side of the first and second layers of polysilicon.
Claim 6
Dependent Claim
226 words
A floating gate transistor for use as a memory cell in a memory which is erased using ultra-violet light, said floating gate transistor formed in an active region of a substrate bounded by field oxide, comprising: a first layer of polysilicon covering an intermediate portion of the active region leaving first and second uncovered portions of the active region on opposite sides of the first layer, said first layer of polysilicon being a floating gate of the floating gate transistor; a first doped region in the first uncovered portion of the active region, said first doped region being a drain of the floating gate transistor; a second doped region in the second uncovered portion of the active region, said second doped region being a source of the floating gate transistor; a first insulator layer between the first layer and the active region; a second insulator layer over the first layer of polysilicon; a second layer of polysilicon over and substantially coterminous with the first layer of polysilicon over the active region, said second layer of polysilicon being a control gate of the floating gate transistor; a layer of nitride over substantially all of the active region, said layer of nitride being not greater than about 200 Angstroms thick; and a third insulator layer over the layer of nitride and the semiconductor substrate outside the active region.
Claim 7
Dependent Claim
226 words
A floating gate transistor for use as a memory cell in a memory which is erased using ultra-violet light, said floating gate transistor formed in an active region of a substrate bounded by field oxide, comprising: a first layer of polysilicon covering an intermediate portion of the active region leaving first and second uncovered portions of the active region on opposite sides of the first layer, said first layer of polysilicon being a floating gate of the floating gate transistor; a first doped region in the first uncovered portion of the active region, said first doped region being a drain of the floating gate transistor; a second doped region in the second uncovered portion of the active region, said second doped region being a source of the floating gate transistor; a first insulator layer between the first layer and the active region; a second insulator layer over the first layer of polysilicon; a second layer of polysilicon over and substantially coterminous with the first layer of polysilicon over the active region, said second layer of polysilicon being a control gate of the floating gate transistor; a layer of nitride over substantially all of the active region, said layer of nitride being not greater than about 200 Angstroms thick; and a third insulator layer over the layer of nitride and the semiconductor substrate outside the active region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-12-31 | 1994-07-02 | 1995-01-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-12-31 | 1998-07-02 | 1999-01-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-12-31 | 2002-07-02 | 2003-01-01 | $7700.00 | Window Closed / Lapsed |