EP0406025A2
Expired / Lapsed
EP
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Method for fabricating a semiconductor device in which an insulating layer thereof has a uniform thickness
Assignee: NEC Corp
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Filing: 1990-07-02
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Granted: —
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Expires: 2010-07-02
Abstract
Abstract A method for fabricating a semiconductor device comprises the steps of forming an insulating layer (23) by the CVD method on a main surface of a semiconductor substrate (21), fluidizing the insulating layer by heat treatment, unifying a thickness of the insulating layer, opening contact holes in desired points of the insulating layer (23), and forming conductor contacts for interconnection on the contact holes. The insulating layer has a uniform thickness in any area on the semiconductor device, so that over-etching of the insulating layer (23) in opening contact holes can be prevented, and the step coverage is well improved.
Inventors
- 👤 Natsuki C/O Nec Corporation Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 18:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P; H10P95/00; H10W20/081; Y; Y10; Y10S; Y10S148/00; Y10S148/133; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
61 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating layer by the CVD method on a main surface of a semiconductor substrate; fluidizing said insulating layer by heat treatment; unifying a thickness of said insulating layer; opening contact holes in desired points of said insulating layer; and forming conductor contacts for interconnection on said contact holes.
Claim 2
Independent Claim
61 words
A method for fabricating a semiconductor device comprising the steps of: forming an insulating layer by the CVD method on a main surface of a semiconductor substrate; fluidizing said insulating layer by heat treatment; unifying a thickness of said insulating layer; opening contact holes in desired points of said insulating layer; and forming conductor contacts for interconnection on said contact holes.
Claim 3
Dependent Claim
75 words
A method for fabricating a semiconductor device, according to claim 1: wherein the step of unifying a thickness of said insulating layer comprises; forming a spin coat insulating layer on said insulating layer which is now called a first insulating layer, etching back the surface of said semiconductor device, forming a second insulating layer on the etched surface of said first insulating layer, and fluidizing said first and said second insulating layers by heat treatment.
Claim 4
Dependent Claim
49 words
A method for fabricating a semiconductor device, according to claim 2: wherein the thickness of said spin coat layer is adjusted so that the thickness of the layer which consists of said spin coat layer and said first insulating layer is unified in all areas on said semiconductor device.
Claim 5
Dependent Claim
24 words
A method for fabricating a semiconductor device, according to claim 2: wherein said first and second insulating layers are made of the same material.
Claim 6
Dependent Claim
24 words
A method for fabricating a semiconductor device, according to claim 2: wherein said first and second insulating layers are made of the different materials.
Claim 7
Dependent Claim
28 words
A method for fabricating a semiconductor device, according to claim 2: wherein at least one of said first and second insulating layer is made of phosphosilicate glass (PSG).
Claim 8
Dependent Claim
28 words
A method for fabricating a semiconductor device, according to claim 2: wherein at least one of said first and second insulating layer is made of borophosphosilicate glass (BPSG).
Claim 9
Dependent Claim
22 words
A method for fabricating a semiconductor device, according to claim 2: wherein said spin coat layer is made of a silica film.
Claim 10
Dependent Claim
22 words
A method for fabricating a semiconductor device, according to claim 2: wherein said spin coat layer is madle of an organic material.
References Cited (Backward Citations)
No citation records indexed.
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