US6258710B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
Assignee: GlobalFoundries Inc
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Filing: 1999-12-10
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Granted: 2001-07-10
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Expires: 2019-12-10
Abstract
Abstract A method of providing sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method includes double damascene using electroplated copper, where the seed layer is deposited by chemical vapor deposition, or by physical vapor deposition in a layer less than about 800 angstroms.
Inventors
- 👤 Hazara S. Rathore
- 👤 Hormazdyar M. Dalal
- 👤 Paul S. McLaughlin
- 👤 Du B. Nguyen
- 👤 Richard G. Smith
- 👤 Alexander J. Swinton
- 👤 Richard A. Wachnik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:13
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/036; H10W20/037; H10W20/042; H10W20/043; H10W20/047; H10W20/049; H10W20/055; H10W20/056
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
168 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a chemical vapor deposition layer of copper; and (e) depositing over the chemical vapor deposition copper layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 2
Independent Claim
168 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a chemical vapor deposition layer of copper; and (e) depositing over the chemical vapor deposition copper layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein the chemical vapor deposition copper layer has a thickness of about 50 to 2000 angstroms.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the chemical vapor deposition copper layer has a thickness of about 100 to 700 angstroms.
Claim 5
Independent Claim
177 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a physical vapor deposition layer of copper having a thickness of less than about 800 angstroms; and (e) depositing over the physical vapor deposition copper layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 6
Independent Claim
177 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a physical vapor deposition layer of copper having a thickness of less than about 800 angstroms; and (e) depositing over the physical vapor deposition copper layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 7
Dependent Claim
14 words
The method of claim 4 wherein the physical vapor deposition is by copper sputtering.
Claim 8
Dependent Claim
14 words
The method of claim 4 wherein the physical vapor deposition is by copper evaporation.
Claim 9
Dependent Claim
19 words
The method of claim 4 wherein the physical vapor deposition copper layer has a thickness below about 600 angstroms.
Claim 10
Independent Claim
179 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a seed layer of copper by chemical vapor deposition, wherein said seed layer has a thickness less than about 800 angstroms; (e) depositing over the copper seed layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 11
Independent Claim
179 words
A method for forming multilevel interconnections of copper lines isolated from one another by dielectric insulation for making contacts to electrical features in a substrate, the method comprising the steps of: (a) preparing a substrate having a dielectric insulation layer to receive copper lines in a defined pattern; (b) optionally depositing a metallic liner in said pattern; (c) depositing in said pattern a layer of an element capable of forming an intermetallic compound with copper, wherein said element has less than two atomic percent solubility copper, and wherein the intermetallic forming element is selected from the group consisting of hafnium, lanthanum, tin and zirconium; (d) subsequently depositing in said pattern a seed layer of copper by chemical vapor deposition, wherein said seed layer has a thickness less than about 800 angstroms; (e) depositing over the copper seed layer by a different process a layer of copper to substantially fill said pattern; and (f) heating the substrate to react the intermetallic forming element with said layer of copper which substantially fills said pattern to form a layer of intermetallic compound.
Claim 12
Dependent Claim
18 words
The method of claim 8 wherein the copper seed layer has a thickness less than about 600 angstroms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-09 | 2005-01-08 | 2005-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-09 | 2009-01-08 | 2009-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-09 | 2013-01-08 | 2013-07-10 | $7700.00 | Window Closed / Lapsed |