US5266446A
Expired / Lapsed
US
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Method of making a multilayer thin film structure
Assignee: International Business Machines Corp
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Filing: 1992-05-26
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Granted: 1993-11-30
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Expires: 2012-05-26
Abstract
Abstract A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of: a. forming a multilayer thin film structure including the steps of: applying a first layer of dielectric polymeric material on the surface of a dielectric substrate, applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein the second polymeric material is photosensitive, imagewise exposing and developing the second polymeric material to form a feature therein, the second layer feature in communication with at least one feature formed in the first polymeric material; and b. filling the features in the entire multilayer structure simultaneously with conductive material. Preferably, the first layer feature is a via and the second layer feature is a capture pad or wiring channel. Also disclosed is a multilayer thin film structure made by this method.
Inventors
- 👤 Kenneth Chang
- 👤 George Czornyj
- 👤 Mukta S. Farooq
- 👤 Ananda H. Kumar
- 👤 Marvin S. Pitler
- 👤 Heinz O. Steimel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/465; H05K3/467; H10W70/00; H10W70/01; H10W70/05; H10W99/00; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0154; H05K2201/03; H05K2201/0332; H05K2201/0364; H05K2201/0376; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09563; H05K2203/00; H05K2203/07; H05K2203/0703; H05K2203/072; H05K2203/10; H05K2203/107; H05K3/0011; H05K3/0017; H05K3/0023; H05K3/0041; H05K3/10; H05K3/18; H05K3/181; H05K3/182; H05K3/184; H05K3/38; H05K3/388; H05K3/4661; H10W20/0886; H10W20/0888
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
185 words
A method of making a planar multilayer thin film structure on the surface of a dielectric substrate comprising the steps of: a. forming a multilayer thin film structure comprising the steps of: applying a first layer of dielectric polymeric material on a surface of a dielectric substrate, applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein said second polymeric material is photosensitive, imagewise exposing and developing said second polymeric material to form a feature therein, said second layer feature in communication with at least one feature formed in said first polymeric material; b. filling the features in the entire multilayer structure simultaneously with conductive material by first depositing a seed layer of conductive material over the surface of said second layer and in said first and second layer features, then depositing a relatively much thicker layer of conductive material over said seed layer, said features being filled to at least the same level as said second polymeric material; and c. planarizing said multilayer thin film structure by removing the excess of the much thicker layer of conducive material.
Claim 2
Independent Claim
185 words
A method of making a planar multilayer thin film structure on the surface of a dielectric substrate comprising the steps of: a. forming a multilayer thin film structure comprising the steps of: applying a first layer of dielectric polymeric material on a surface of a dielectric substrate, applying a second layer of dielectric polymeric material over the first layer of polymeric material wherein said second polymeric material is photosensitive, imagewise exposing and developing said second polymeric material to form a feature therein, said second layer feature in communication with at least one feature formed in said first polymeric material; b. filling the features in the entire multilayer structure simultaneously with conductive material by first depositing a seed layer of conductive material over the surface of said second layer and in said first and second layer features, then depositing a relatively much thicker layer of conductive material over said seed layer, said features being filled to at least the same level as said second polymeric material; and c. planarizing said multilayer thin film structure by removing the excess of the much thicker layer of conducive material.
Claim 3
Dependent Claim
24 words
The method of claim 1 further comprising the step of forming said first layer feature subsequent to the forming of said second layer feature.
Claim 4
Dependent Claim
26 words
The method of claim 2 wherein said first layer feature forming step is by laser ablating or reactive ion etching the first layer of polymeric material.
Claim 5
Dependent Claim
13 words
The method of claim 2 wherein said first polymeric material is not photosensitive.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein said first layer of polymeric material is a polyimide or a precursor of a polyimide.
Claim 7
Dependent Claim
24 words
The method of claim 1 further comprising the step of forming said first layer feature prior to the forming of said second layer feature.
Claim 8
Dependent Claim
23 words
The method of claim 6 wherein said first layer of polymeric material is a photosensitive polyimide or a precursor of a photosensitive polyimide.
Claim 9
Dependent Claim
29 words
The method of claim 7 wherein said first layer feature forming step comprises imagewise exposing and developing said photosensitive polyimide or polyimide precursor to form a first layer feature.
Claim 10
Dependent Claim
16 words
The method of claim 1 wherein the seed layer is deposited by sputtering or vapor deposition.
Claim 11
Dependent Claim
14 words
The method of claim 9 wherein the seed layer comprises chromium followed by copper.
Claim 12
Dependent Claim
14 words
The method of claim 1 wherein the seed layer is deposited by electrolessly plating.
Claim 13
Dependent Claim
16 words
The method of claim 11 wherein the seed layer comprises palladium followed by nickel or cobalt.
Claim 14
Dependent Claim
20 words
The method of claim 1 wherein the much thicker layer of conductive material is deposited by sputtering or vapor deposition.
Claim 15
Dependent Claim
19 words
The method of claim 1 wherein the much thicker layer of conductive material is electroplated onto the seed layer.
Claim 16
Dependent Claim
20 words
The method of claim 1 wherein the much thicker layer of conductive material is electrolessly placed onto the seed layer.
Claim 17
Dependent Claim
15 words
The method of claim 1 wherein the much thicker layer of conductive material is copper.
Claim 18
Dependent Claim
15 words
The method of claim 1 wherein the step of planarizing is by a machining process.
Claim 19
Dependent Claim
16 words
The method of claim 1 wherein the step of polarizing is by a chemical-mechanical polishing process.
Claim 20
Dependent Claim
70 words
The method of claim 1 wherein: after first depositing a seed layer of conductive material over the surface of said second layer and in said first and second layer features, and prior to depositing the relatively much thicker layer of conductive material over said seed layer, the method further comprises removing the seed layer form the surface of said second layer but not from the first and second layer features.
Claim 21
Dependent Claim
20 words
The method of claim 19 wherein the much thicker layer of conducive material is electrolessly plated onto the seed layer.
Claim 22
Dependent Claim
13 words
The method of claim 1 wherein the substrate is a multilayer ceramic substrate.
Claim 23
Dependent Claim
23 words
The method of claim 1 wherein said second layer of polymeric material is a photosensitive polyimide or a precursor of a photosensitive polyimide.
Claim 24
Dependent Claim
13 words
The method of claim 1 wherein said first layer feature is a via.
Claim 25
Dependent Claim
14 words
The method of claim 1 wherein said second layer feature is a wiring channel.
Claim 26
Dependent Claim
14 words
The method of claim 1 wherein said second layer feature is a capture pad.
References Cited (Backward Citations)
FR2137902A1
Cited
US4451326A
Cited
US4622058A
Cited
US4631111A
Cited
US4572764A
Cited
EP0190490A2
Cited
EP0211180A2
Cited
US4789648A
Cited
US4944836A
Cited
EP0238118A2
Cited
FR2602947A1
Cited
US4816115A
Cited
US5091339A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-11-29 | 1997-05-31 | 1997-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-29 | 2001-05-31 | 2001-11-30 | $3760.00 | Window Closed / Lapsed |
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