US5250329A
Expired / Lapsed
US
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Method of depositing conductive lines on a dielectric
Assignee: Rateze Remote Mgmt LLC
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Filing: 1992-11-13
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Granted: 1993-10-05
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Expires: 2012-11-13
Abstract
Abstract A method of depositing micron-sized metal lines on a dielectric substrate, such as polyimide. The dielectric is covered with a thin metallic layer, of a first metal placed in a reaction cell containing a gas-phase molecular species containing a second metal, and exposed to a focused laser beam. A translation stage moves the dielectric relative to the beam to selectively deposit micron-sized second metal lines on the metallic layer. The metallic layer on the unirradiated portion of the substrate is subsequently etched away, leaving the lines adhered to the dielectric surface.
Inventors
- 👤 Robert Miracky
- 👤 Joan E. Yater
- 👤 Colin A. MacKay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; C; C23; C23C; C23C16/00; C23C16/04; C23C16/047; H05; H05K; H05K3/00; H05K3/10; H05K3/14; H05K3/146
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
161 words
A method of depositing electrically conductive lines on a dielectric substrate, comprising the steps of: covering a dielectric substrate with a continuous metallic layer of a first metal, the first metal being adherent to the substrate; placing the substrate with the metallic layer thereon into a reaction cell containing a gas mixture, at least one gas of which is a compound bearing an electrically conductive second metal different from the first metal, wherein the metallic layer provides a nucleation layer for the second metal; irradiating the metallic layer at selected portions with a focused laser beam to form continuous, electrically conductive second metal lines at least one micron thick on top of the metallic layer wherein during irradiation the metallic layer provides a more uniform thermal environment which protects the underlying dielectric from deformation; and chemically etching the metallic layer so as to remove the metallic layer from the unirradiated portions of the substrate while leaving the second metal lines intact.
Claim 2
Independent Claim
161 words
A method of depositing electrically conductive lines on a dielectric substrate, comprising the steps of: covering a dielectric substrate with a continuous metallic layer of a first metal, the first metal being adherent to the substrate; placing the substrate with the metallic layer thereon into a reaction cell containing a gas mixture, at least one gas of which is a compound bearing an electrically conductive second metal different from the first metal, wherein the metallic layer provides a nucleation layer for the second metal; irradiating the metallic layer at selected portions with a focused laser beam to form continuous, electrically conductive second metal lines at least one micron thick on top of the metallic layer wherein during irradiation the metallic layer provides a more uniform thermal environment which protects the underlying dielectric from deformation; and chemically etching the metallic layer so as to remove the metallic layer from the unirradiated portions of the substrate while leaving the second metal lines intact.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the metallic layer is applied to the dielectric substrate by electroless plating.
Claim 4
Dependent Claim
26 words
The method of claim 1 wherein the metallic layer is applied to the dielectric substrate by immersion in a liquid solution containing a surface-activating metal species.
Claim 5
Dependent Claim
10 words
The method of claim 1 wherein the dielectric is polyimide.
Claim 6
Dependent Claim
18 words
The method of claim 1 wherein the dielectric is selected from polyimide, silicon dioxide, silicon nitride, or epoxy.
Claim 7
Dependent Claim
27 words
The method of claim 1 wherein the metallic layer is selected from titanium, chromium, palladium, tin/palladium, gold, iron or a composite layer of titanium, copper and titanium.
Claim 8
Dependent Claim
19 words
The method of claim 6 wherein the thickness of the metallic layer ranges from approximately 100 to 4000 angstroms.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein the gas mixture includes tungsten hexafluoride and hydrogen.
Claim 10
Dependent Claim
11 words
The method of claim 1 wherein the gas includes tungsten hexacarbonyl.
Claim 11
Dependent Claim
21 words
The method of claim 1 wherein the gas includes one of a class of gaseous organo-metallic compounds containing copper or gold.
Claim 12
Dependent Claim
16 words
The method of claim 1 wherein the second metal lines are at least 5 microns wide.
Claim 13
Dependent Claim
17 words
The method of claim 11 wherein the second metal lines in the range of 5-20 microns wide.
Claim 14
Dependent Claim
18 words
The method of claim 11 wherein the second metal lines are in the range of 1-5 microns thick.
Claim 15
Dependent Claim
18 words
The method of claim 12 wherein the second metal lines are in the range of 1-5 microns thick.
Claim 16
Dependent Claim
15 words
The method of claim 1 wherein the chemical etching leaves the second metal lines unaffected.
Claim 17
Dependent Claim
23 words
The method of claim 1 wherein the second metal lines and the unetched first metal therebeneath form the final lines on the substrate.
Claim 18
Dependent Claim
19 words
The method of claim 1 wherein the second metal lines form conductive wires connecting circuitry on integrated circuit chips.
Claim 19
Dependent Claim
18 words
The method of claim 1 wherein the second metal lines form conductive wires connecting circuitry on multi-chip substrates.
Claim 20
Dependent Claim
17 words
The method of claim 1 wherein the metallic layer is applied to the dielectric substrate by evaporation.
Claim 21
Dependent Claim
17 words
The method of claim 1 wherein the metallic layer is applied to the dielectric substrate by sputtering.
Claim 22
Dependent Claim
16 words
The method of claim 1 wherein the irradiation is provided by a continuous wave laser beam.
Claim 23
Dependent Claim
20 words
The method of claim 21 wherein the laser beam is operated at a wavelength which does not harm the dielectric.
Claim 24
Dependent Claim
15 words
The method of claim 22 wherein the wavelength is in the range of 200-1400 nm.
Claim 25
Dependent Claim
17 words
The method of claim 21 wherein the dielectric decomposes at a temperature lower than about 500° C.
Claim 26
Dependent Claim
11 words
The method of claim 24 wherein the second metal is tungsten.
Claim 27
Dependent Claim
14 words
The method of claim 25 wherein the gas mixture includes an inert buffer gas.
Claim 28
Dependent Claim
11 words
The method of claim 25 wherein the gas includes tungsten hexacarbonyl.
Claim 29
Dependent Claim
14 words
The method of claim 25 wherein the gas mixture includes tungsten hexafluoride and hydrogen.
Claim 30
Dependent Claim
25 words
The method of claim 28 wherein the ratio of hydrogen to tungsten hexafluoride is in the range of 3 to 1 to 100 to 1.
Claim 31
Dependent Claim
17 words
The method of claim 29 wherein the ratio of hydrogen to tungsten hexafluoride is 30 to 1.
Claim 32
Dependent Claim
19 words
The method of claim 30 wherein the total chamber pressure in the reaction cell during irradiation is 30 Torr.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |