Patent US6180982B1 successfully refreshed from Google Patents.
US6180982B1
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US
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Semiconductor device and method of making thereof
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1997-03-20
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Granted: 2001-01-30
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Expires: 2017-03-20
Abstract
Abstract To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transistors is corrected, a region 145 having a P-type behavior more potential than that of a drain region 146 is arranged between a channel forming region 134 and the drain region 146 in the P-channel type thin film transistor whereby the P-channel type thin film transistor having the low OFF characteristic can be provided and a low concentration impurity region 136 is arranged between a channel forming region 137 and a drain region 127 in the N-channel type thin film transistor whereby the N-channel type thin film transistor having the low OFF characteristic and where deterioration is restrained can be provided.
Inventors
- 👤 Hongyong Zhang
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:22
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
52 words
A semiconductor device having at least p-type thin film transistor, said p-type thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region.
Claim 2
Dependent Claim
52 words
A semiconductor device having at least p-type thin film transistor, said p-type thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region.
Claim 3
Dependent Claim
44 words
A semiconductor device according to claim 1 wherein said drain region and said impurity region are doped with a p-type impurity at a same concentration, and an n-type impurity is contained in said impurity region at a smaller concentration than in said drain region.
Claim 4
Dependent Claim
72 words
A semiconductor device having at least p-type thin film transistor, said p-type thin film transistor comprising: a channel region; a drain region having a p-type conductivity and containing an n-type impurity; and an impurity region disposed between said channel region and said drain region, said impurity region containing said n-type impurity at a smaller concentration than said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region.
Claim 5
Dependent Claim
72 words
A semiconductor device having at least p-type thin film transistor, said p-type thin film transistor comprising: a channel region; a drain region having a p-type conductivity and containing an n-type impurity; and an impurity region disposed between said channel region and said drain region, said impurity region containing said n-type impurity at a smaller concentration than said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region.
Claim 6
Dependent Claim
112 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region contains an n-type impurity in a smaller concentration than said drain region.
Claim 7
Dependent Claim
112 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region contains an n-type impurity in a smaller concentration than said drain region.
Claim 8
Dependent Claim
59 words
A semiconductor device according to claim 4 wherein said impurity region of the p-channel thin film transistor contains the n-type impurity at a same concentration as the impurity region of the n-channel thin film transistor, and the drain region and the impurity region of the p-channel thin film transistor are doped with a p-type impurity at a same concentration.
Claim 9
Dependent Claim
30 words
A semiconductor device according to claim 5 wherein the channel regions of the p-type thin film transistor and the n-channel thin film transistor are formed from a same semiconductor film.
Claim 10
Dependent Claim
130 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate, (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity and containing a p-type impurity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region and contains the p-type impurity in a same concentration as said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region contains an n-type impurity in a smaller concentration than said drain region.
Claim 11
Dependent Claim
130 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate, (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity and containing a p-type impurity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region and contains the p-type impurity in a same concentration as said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region contains an n-type impurity in a smaller concentration than said drain region.
Claim 12
Dependent Claim
63 words
A semiconductor device according to claim 7 wherein said impurity region of the p-channel thin film transistor contains the n-type impurity at a same concentration as the impurity region of the n-channel thin film transistor, and the drain region of the p-channel thin film transistor contains the n-type impurity in a same concentration as the drain region of the n-channel thin film transistor.
Claim 13
Dependent Claim
122 words
A semiconductor device formed over a substrate, having an active matrix circuit comprising a p-channel thin film transistor and a driving circuit for driving said active matrix circuit, said driving circuit comprising a p-channel thin film transistor and an n-channel thin film transistor, each of said thin film transistors of the active matrix circuit and the driving circuit comprising: a drain region; a channel region; and an impurity region disposed between said drain and the channel region, wherein the impurity region of the p-channel thin film transistor(s) has a stronger p-type conductivity than the drain region thereof; and an n-type impurity is contained in the impurity region of the n-channel thin film transistor in a smaller concentration than in the drain thereof.
Claim 14
Dependent Claim
122 words
A semiconductor device formed over a substrate, having an active matrix circuit comprising a p-channel thin film transistor and a driving circuit for driving said active matrix circuit, said driving circuit comprising a p-channel thin film transistor and an n-channel thin film transistor, each of said thin film transistors of the active matrix circuit and the driving circuit comprising: a drain region; a channel region; and an impurity region disposed between said drain and the channel region, wherein the impurity region of the p-channel thin film transistor(s) has a stronger p-type conductivity than the drain region thereof; and an n-type impurity is contained in the impurity region of the n-channel thin film transistor in a smaller concentration than in the drain thereof.
Claim 15
Dependent Claim
94 words
A semiconductor device according to claim 9 wherein said n-type impurity is contained in the impurity region of the n-channel thin film transistor in a same concentration as in the impurity region of the p-channel thin film transistor(s), the concentration of the n-type impurity in the drain region of the n-channel thin film transistor is the same as in the drain region of the p-channel thin film transistor, and a concentration of a p-type impurity in the drain region of the p-channel thin film transistor is the same as in the impurity region thereof.
Claim 16
Dependent Claim
30 words
A semiconductor device according to claim 9 wherein the channel regions of the p-type thin film transistor and the n-channel thin film transistor are formed from a same semiconductor film.
Claim 17
Dependent Claim
96 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate, (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an offset region disposed between said channel region and said drain region.
Claim 18
Dependent Claim
96 words
A semiconductor device having at least a p-channel thin film transistor and an n-channel thin film transistor formed over a same substrate, (a) said p-channel thin film transistor comprising: a channel region; a drain region having a p-type conductivity; and an impurity region disposed between said channel region and said drain region, wherein said impurity region has a stronger p-type conductivity than said drain region, and (b) said n-channel thin film transistor comprising: a channel region; a drain region having an n-type conductivity; and an offset region disposed between said channel region and said drain region.
Claim 19
Dependent Claim
31 words
A semiconductor device according to claim 1 wherein said channel region, said drain region and said impurity region are formed in a semiconductor layer that is formed on an insulating surface.
Claim 20
Dependent Claim
31 words
A semiconductor device according to claim 3 wherein said channel region, said drain region and said impurity region are formed in a semiconductor layer that is formed on an insulating surface.
Claim 21
Dependent Claim
67 words
A semiconductor device according to claim 6 wherein said channel region, said drain region and said impurity region of said p-channel transistor are formed in a first semiconductor layer that is formed on an insulating surface and said channel region, said drain region, and said impurity region of the n-channel thin film transistor are formed in a second semiconductor layer that is formed on said insulating surface.
Claim 22
Dependent Claim
68 words
A semiconductor device according to claim 11 wherein said drain region, said channel region and said impurity region of p-type thin film transistor are formed in a first semiconductor layer that is formed on an insulating surface and said drain region, said channel region and said impurity region of the n-channel thin film transistor are formed in a second semiconductor layer that is formed on said insulating surface.
Claim 23
Dependent Claim
65 words
A semiconductor device according to claim 12 wherein said channel region, said drain region and said impurity region of said p-channel thin film transistor are formed in a first semiconductor layer that is formed on an insulating surface and said channel region, said drain region of said n-channel thin film transistor are formed in a second semiconductor layer that is formed on said insulating surface.
Claim 24
Dependent Claim
129 words
A semiconductor device having at least a p-channel thin film transistor comprising: a semiconductor layer being formed over a substrate; at least a channel region, a drain region and an impurity region being formed in the semiconductor layer; a gate insulating film being formed adjacent to at least the channel region; a gate electrode being formed adjacent to at least the channel region with the gate insulating film interposed therebetween; an interlayer insulating film being formed over the semiconductor layer, the gate insulating film and the gate electrode, wherein the drain region and the impurity region include a same p-type impurity, and an n-type impurity concentration contained in said drain region is higher than that contained in the impurity region, wherein the interlayer insulating film comprises a resin film.
Claim 25
Dependent Claim
129 words
A semiconductor device having at least a p-channel thin film transistor comprising: a semiconductor layer being formed over a substrate; at least a channel region, a drain region and an impurity region being formed in the semiconductor layer; a gate insulating film being formed adjacent to at least the channel region; a gate electrode being formed adjacent to at least the channel region with the gate insulating film interposed therebetween; an interlayer insulating film being formed over the semiconductor layer, the gate insulating film and the gate electrode, wherein the drain region and the impurity region include a same p-type impurity, and an n-type impurity concentration contained in said drain region is higher than that contained in the impurity region, wherein the interlayer insulating film comprises a resin film.
Claim 26
Dependent Claim
13 words
A semiconductor device according to claim 18 wherein said p-type impurity is boron.
Claim 27
Dependent Claim
13 words
A semiconductor device according to claim 18 wherein said n-type impurity is phosphorus.
Claim 28
Dependent Claim
17 words
A semiconductor device according to claim 18 further comprising a gate electrode formed over said channel region.
Claim 29
Dependent Claim
144 words
A semiconductor device having a p-channel thin film transistor and an n-channel thin film transistor formed over a substrate comprising: said p-channel thin film transistor comprising: a first semiconductor layer formed over said substrate; at least a first channel region, a first drain region and a first impurity region formed in said first semiconductor layer; wherein the first drain region and the first impurity region include a same p-type impurity, and an n-type impurity concentration contained in said first drain region is higher than that contained in the first impurity region; (a) said n-channel thin film transistor comprising a second semiconductor layer formed over said substrate; at least a second channel region, a second drain region and a second impurity region formed in said second semiconductor layer, wherein said second drain region contains n-type impurity at a concentration higher than said second impurity region.
Claim 30
Dependent Claim
144 words
A semiconductor device having a p-channel thin film transistor and an n-channel thin film transistor formed over a substrate comprising: said p-channel thin film transistor comprising: a first semiconductor layer formed over said substrate; at least a first channel region, a first drain region and a first impurity region formed in said first semiconductor layer; wherein the first drain region and the first impurity region include a same p-type impurity, and an n-type impurity concentration contained in said first drain region is higher than that contained in the first impurity region; (a) said n-channel thin film transistor comprising a second semiconductor layer formed over said substrate; at least a second channel region, a second drain region and a second impurity region formed in said second semiconductor layer, wherein said second drain region contains n-type impurity at a concentration higher than said second impurity region.
Claim 31
Dependent Claim
13 words
A semiconductor device according to claim 22 wherein said p-type impurity is boron.
Claim 32
Dependent Claim
13 words
A semiconductor device according to claim 22 wherein said n-type impurity is phosphorus.
Claim 33
Dependent Claim
17 words
A semiconductor device according to claim 22 further comprising a gate electrode formed over said channel region.
Claim 34
Dependent Claim
134 words
A semiconductor device having at least p-channel thin film transistor, said p-channel thin film transistor comprising: a semiconductor island being formed an insulating surface; a channel region being formed in the semiconductor island; a drain region being formed in the semiconductor island, said drain region having a p-type conductivity; an impurity region being disposed between the channel region and the drain region; a gate insulating film being formed adjacent to at least the channel region; a gate electrode being formed adjacent to at least the channel region with the gate insulating film interposed therebetween; an interlayer insulating film being formed over the semiconductor island, the gate insulating film and the gate electrode, wherein the impurity region has a stronger p-type conductivity than the drain region, wherein the interlayer insulating film comprises a resin film.
Claim 35
Dependent Claim
134 words
A semiconductor device having at least p-channel thin film transistor, said p-channel thin film transistor comprising: a semiconductor island being formed an insulating surface; a channel region being formed in the semiconductor island; a drain region being formed in the semiconductor island, said drain region having a p-type conductivity; an impurity region being disposed between the channel region and the drain region; a gate insulating film being formed adjacent to at least the channel region; a gate electrode being formed adjacent to at least the channel region with the gate insulating film interposed therebetween; an interlayer insulating film being formed over the semiconductor island, the gate insulating film and the gate electrode, wherein the impurity region has a stronger p-type conductivity than the drain region, wherein the interlayer insulating film comprises a resin film.
Claim 36
Dependent Claim
44 words
A device according to claim 26 , wherein the drain region and the impurity region are introduced with a p-type impurity at a same concentration, and an n-type impurity is included in the impurity region at a smaller concentration than in the drain region.
Claim 37
Dependent Claim
30 words
A device according to claim 26 , wherein the channel region, the drain region and the impurity region are formed in a semiconductor layer being formed on an insulating surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-01-30 | 2004-07-31 | 2005-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-01-30 | 2008-07-31 | 2009-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-01-30 | 2012-07-31 | 2013-01-30 | $7700.00 | Window Closed / Lapsed |