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US6160271A
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Semiconductor thin film and semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 2000-02-01
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Granted: 2000-12-12
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Expires: 2020-02-01
Abstract
Abstract To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).
Inventors
- 👤 Shunpei Yamazaki
- 👤 Hisashi Ohtani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H01; H01H; H01H15/00; H01H15/02; H01H15/06; B; B60; B60N; B60N2/00; B60N2/02; B60N2/04; B60N2/06; B60N2/07; H01H13/00; H01H13/02; H01H13/12; H01H13/14; H01H13/26; H01H13/36; H01H15/10; H01H15/16; H10D; H10D62/00; H10D62/40; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
72 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein an operating speed of said semiconductor circuit is 10 GHz or higher.
Claim 2
Dependent Claim
72 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein an operating speed of said semiconductor circuit is 10 GHz or higher.
Claim 3
Dependent Claim
44 words
A display device according to claim 1 wherein said display device is incorporated into an electrooptical equipment selected from the group consisting of a video camera, a digital still camera, a head-mounted display, a car navigation, a personal computer and a mobile information terminal.
Claim 4
Dependent Claim
32 words
A display device according to claim 1 wherein said display device is selected form the group consisting of a liquid crystal display device, an electrochromic display device and an electroluminescence display device.
Claim 5
Dependent Claim
76 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein sub-threshold coefficient of a thin film transistor constituting said semiconductor circuit is 60 to 100 mV/decade.
Claim 6
Dependent Claim
76 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein sub-threshold coefficient of a thin film transistor constituting said semiconductor circuit is 60 to 100 mV/decade.
Claim 7
Dependent Claim
44 words
A display device according to claim 4 wherein said display device is incorporated into an electrooptical equipment selected from the group consisting of a video camera, a digital still camera, a head-mounted display, a car navigation, a personal computer and a mobile information terminal.
Claim 8
Dependent Claim
32 words
A display device according to claim 4 wherein said display device is selected form the group consisting of a liquid crystal display device, an electrochromic display device and an electroluminescence display device.
Claim 9
Dependent Claim
105 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein a field effect mobility of an N-channel type thin film transistor constituting said semiconductor circuit is 200 to 650 cm 2 /Vs; wherein the field effect mobility of a P-channel type thin film transistor constituting said semiconductor circuit is 100 to 300 cm 2 /Vs.
Claim 10
Dependent Claim
105 words
A display device having a semiconductor circuit constituting at least one of a pixel circuit, a driving circuit controlling said pixel circuit, a CPU, or a memory, said semiconductor circuit comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein a field effect mobility of an N-channel type thin film transistor constituting said semiconductor circuit is 200 to 650 cm 2 /Vs; wherein the field effect mobility of a P-channel type thin film transistor constituting said semiconductor circuit is 100 to 300 cm 2 /Vs.
Claim 11
Dependent Claim
44 words
A display device according to claim 7 wherein said display device is incorporated into an electrooptical equipment selected from the group consisting of a video camera, a digital still camera, a head-mounted display, a car navigation, a personal computer and a mobile information terminal.
Claim 12
Dependent Claim
32 words
A display device according to claim 7 wherein said display device is selected form the group consisting of a liquid crystal display device, an electrochromic display device and an electroluminescence display device.
Claim 13
Dependent Claim
44 words
A semiconductor device comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein sub-threshold coefficient of said semiconductor device is 60 to 100 mV/decade.
Claim 14
Dependent Claim
44 words
A semiconductor device comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein sub-threshold coefficient of said semiconductor device is 60 to 100 mV/decade.
Claim 15
Dependent Claim
44 words
A semiconductor device according to claim 10 wherein said semiconductor device is incorporated into an electrooptical equipment selected from the group consisting of a video camera, a digital still camera, a head-mounted display, a car navigation, a personal computer and a mobile information terminal.
Claim 16
Dependent Claim
32 words
A semiconductor device according to claim 10 wherein said semiconductor device is selected form the group consisting of a liquid crystal display device, an electrochromic display device and an electroluminescence display device.
Claim 17
Dependent Claim
79 words
A semiconductor device comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode for-med adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein a field effect mobility of an N-channel type thin film transistor constituting said semiconductor device is 200 to 650 cm 2 /Vs; wherein the field effect mobility of a P-channel type thin film transistor constituting said semiconductor device is 100 to 300 cm 2 /Vs.
Claim 18
Dependent Claim
79 words
A semiconductor device comprising: a semiconductor film formed over a substrate having an insulating surface; at least one gate electrode for-med adjacent to said semiconductor film with a gate insulating film interposed therebetween; wherein a field effect mobility of an N-channel type thin film transistor constituting said semiconductor device is 200 to 650 cm 2 /Vs; wherein the field effect mobility of a P-channel type thin film transistor constituting said semiconductor device is 100 to 300 cm 2 /Vs.
Claim 19
Dependent Claim
44 words
A semiconductor device according to claim 13 wherein said semiconductor device is incorporated into an electrooptical equipment selected from the group consisting of a video camera, a digital still camera, a head-mounted display, a car navigation, a personal computer and a mobile information terminal.
Claim 20
Dependent Claim
32 words
A semiconductor device according to claim 13 wherein said semiconductor device is selected form the group consisting of a liquid crystal display device, an electrochromic display device and an electroluminescence display device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |