Method of fabricating a polysilicon thin film transistor

Claim 1

A process for making a hydrogenated polysilicon thin film transistor comprising the steps of: providing a substrate; depositing a layer of amorphous silicon on the substrate; annealing said layer of amorphous silicon to form a first polysilicon layer; patterning the first polysilicon layer to form islands; growing a layer of silicon dioxide on the islands to form a gate dielectric layer; depositing and patterning a second layer of polysilicon; doping the first and second polysilicon layers to form a source, a drain, and a gate; depositing and patterning a metal layer to provide a source contact, a drain contact, and a gate contact for the respective source, drain, and gate and thereby forming a polysilicon thin film transistor; annealing said polysilicon thin film transistor; hydrogenating the polysilicon thin film transistor; and depositing an atomic hydrogen-containing layer on the polysilicon thin film transistor.