EP0383230A2
Expired / Lapsed
EP
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Manufacturing Method of a Semiconductor Device
Assignee: Seiko Epson Corp
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Filing: 1990-02-12
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Granted: —
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Expires: 2010-02-12
Abstract
Abstract Disclosed are a semiconductor device and a method for manufacturing it which allows easy production of polycrystalline films with large grains and a high crystallized volume fraction on an insulating substrate.
Inventors
- 👤 Hideaki Oka
- 👤 Satoshi Takenaka
- 👤 Masafumi Kunii
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 07:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3258; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 35
Claim 1
Independent Claim
45 words
A semiconductor device formed on an insulating material comprising a semiconductor layer (106) of polycrystalline silicon containing impurities, such as boron in at least one active region of 1 x 10¹⁵ to 1 x 10¹⁹ cm⁻³, and including grains of a size of ≧ 2µm.
Claim 2
Dependent Claim
45 words
A semiconductor device formed on an insulating material comprising a semiconductor layer (106) of polycrystalline silicon containing impurities, such as boron in at least one active region of 1 x 10¹⁵ to 1 x 10¹⁹ cm⁻³, and including grains of a size of ≧ 2µm.
Claim 3
Dependent Claim
25 words
The semiconductor device according to claim 1 in the form of an insulated gate type semiconductor device wherein said active region is a channel region.
Claim 4
Dependent Claim
20 words
A semiconductor device characterized by having a conductive layer of polycrystalline silicon containing grains of a size of ≧ 1µm.
Claim 5
Dependent Claim
20 words
A semiconductor device characterized by having a conductive layer of polycrystalline silicon containing grains of a size of ≧ 1µm.
Claim 6
Dependent Claim
22 words
The semiconductor device according to claim 3 characterized in that said conductive layer is the gate electrode of a field effect transistor.
Claim 7
Dependent Claim
19 words
The semiconductor device according to claim 4 characterized in that said conductive layer is of P type polycrystalline silicon.
Claim 8
Dependent Claim
19 words
The semiconductor device according to claim 4 characterized in that said conductive layer is of N type polycrystalline silicon.
Claim 9
Independent Claim
47 words
A method of forming a semiconductor device having a polycrystalline film comprising the steps of: (a) forming a noncrystalline semiconductor film whose main composition is silicon on an insulating support, employing plasma CVD, and (b) thermally treating the noncrystalline semiconductor film to provide for solid phase recrystallization.
Claim 10
Independent Claim
47 words
A method of forming a semiconductor device having a polycrystalline film comprising the steps of: (a) forming a noncrystalline semiconductor film whose main composition is silicon on an insulating support, employing plasma CVD, and (b) thermally treating the noncrystalline semiconductor film to provide for solid phase recrystallization.
Claim 11
Dependent Claim
28 words
The method of claim 7 wherein said step (a) comprises the forming a noncrystalline semiconductor by plasma CVD at a temperature range of about room temperature to 150°C.
Claim 12
Dependent Claim
27 words
The method of claim 7 wherein said step (a) comprises the forming a noncrystalline semiconductor by plasma CVD at a temperature range of about 150°C to 350°C.
Claim 13
Dependent Claim
26 words
A semiconductor device formed by any manufacturing methods of claims 1 to 3, containing polycrystalline grains of a size equal to or greater than 1 micron.
Claim 14
Independent Claim
88 words
A method of manufacturing a semiconductor device characterized by the inclusion of at least (a) a process of forming a non-crystalline semiconductor layer (102) mainly composed of silicon on an insulating material (101), (b) a process of performing a thermal treatment for a solid phase recrystallization on said non-crystalline semiconductor layer, and (c) a process of performing a thermal treatment on said semiconductor layer after the temperature has been raised for a certain time to a prescribed temperature higher than the thermal treatment temperature in the process (b).
Claim 15
Independent Claim
88 words
A method of manufacturing a semiconductor device characterized by the inclusion of at least (a) a process of forming a non-crystalline semiconductor layer (102) mainly composed of silicon on an insulating material (101), (b) a process of performing a thermal treatment for a solid phase recrystallization on said non-crystalline semiconductor layer, and (c) a process of performing a thermal treatment on said semiconductor layer after the temperature has been raised for a certain time to a prescribed temperature higher than the thermal treatment temperature in the process (b).
Claim 16
Dependent Claim
23 words
The method according to claim 11 characterized by said process (c) being a part of forming a gate insulation film by thermal oxidation.
Claim 17
Dependent Claim
25 words
The method according to claim 11 or 12 characterized in that the temperature in said process (c) is raised at a speed lower than 20°C/min.
Claim 18
Independent Claim
23 words
The method according to any of claims 11 to 13 characterized in that the prescribed temperature in said process (c) 700°C to 1,200°C.
Claim 19
Independent Claim
29 words
The method according to any of claims 11 to 14 characterized by forming said non-crystalline semiconductor layer on an insulating amorphous material in said process (a) by plasma CVD.
Claim 20
Independent Claim
63 words
A method of manufacturing a semiconductor device characterized by the inclusion of a process wherein a non-crystalline semiconductor layer mainly composed of silicon containing impurities, such as boron of 1 x 10¹⁶ to 1 x 10¹⁹ cm⁻³ is formed by plasma CVD on an insulating amorphous material and a thermal treatment for solid phase recrystallization is then performed on said non-crystalline semiconductor layer.
Claim 21
Independent Claim
63 words
A method of manufacturing a semiconductor device characterized by the inclusion of a process wherein a non-crystalline semiconductor layer mainly composed of silicon containing impurities, such as boron of 1 x 10¹⁶ to 1 x 10¹⁹ cm⁻³ is formed by plasma CVD on an insulating amorphous material and a thermal treatment for solid phase recrystallization is then performed on said non-crystalline semiconductor layer.
Claim 22
Dependent Claim
27 words
The method according to claim 16 characterized by forming an active region of the semiconductor device in at least a part of said thermally treated semiconductor layer.
Claim 23
Dependent Claim
22 words
The method according to claim 17 characterized by forming a channel region for insulated gate type semiconductor device in said active region.
Claim 24
Independent Claim
58 words
The method of manufacturing a semiconductor device characterized by forming a conductive layer by, first, forming a non-crystalline semiconductor layer mainly composed of silicon containing impurities, such as phosphorous or boron of 1 x 10¹⁶ to 1 x 10²² cm⁻³ by plasma CVD and then performing a thermal treatment for solid phase recrystallization on said non-crystalline semiconductor layer.
Claim 25
Independent Claim
58 words
The method of manufacturing a semiconductor device characterized by forming a conductive layer by, first, forming a non-crystalline semiconductor layer mainly composed of silicon containing impurities, such as phosphorous or boron of 1 x 10¹⁶ to 1 x 10²² cm⁻³ by plasma CVD and then performing a thermal treatment for solid phase recrystallization on said non-crystalline semiconductor layer.
Claim 26
Dependent Claim
22 words
The method according to claim 19 characterized by said conductive layer being a gate electrode of an insulated gate type semiconductor device.
Claim 27
Independent Claim
77 words
A method of manufacturing a semiconductor device characterized by the inclusion of (a) a process of forming a first silicon layer on an insulating material, (b) a process of forming a second silicon layer on said first silicon layer, (c) a process of performing crystal growth on said first silicon layer and second silicon layer by a thermal treatment, (d) a process of forming a semiconductor element on the silicon layer which was formed by crystal growth.
Claim 28
Independent Claim
77 words
A method of manufacturing a semiconductor device characterized by the inclusion of (a) a process of forming a first silicon layer on an insulating material, (b) a process of forming a second silicon layer on said first silicon layer, (c) a process of performing crystal growth on said first silicon layer and second silicon layer by a thermal treatment, (d) a process of forming a semiconductor element on the silicon layer which was formed by crystal growth.
Claim 29
Dependent Claim
16 words
The method according to claim 21 characterized by forming said first silicon layer by plasma CVD.
Claim 30
Dependent Claim
22 words
The method according to claim 22 characterized by forming said first silicon layer by plasma CVD at the temperature of over 550°C.
Claim 31
Independent Claim
26 words
The method according to any of claims 21 to 23 characterized in that the film thickness of said first silicon layer is 5 to 10 nm.
Claim 32
Independent Claim
29 words
The method according to any of claims 21 to 24 characterized in that said first silicon layer is composed of non-crystalline silicon containing crystalline regions with orientation of <110>.
Claim 33
Independent Claim
20 words
The method according to any of claims 21 to 25 characterized by forming said second silicon layer by plasma CVD.
Claim 34
Dependent Claim
23 words
The method according to claim 26 characterized by forming said second silicon layer by plasma CVD at a temperature of lower than 400°C.
Claim 35
Dependent Claim
25 words
The method according to claim 21 characterized by forming said first silicon layer and said second silicon layer by plasma CVD in a continuous manner.
References Cited (Backward Citations)
No citation records indexed.
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