Method for production of SOI substrate by pasting and SOI substrate

Claim 1

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a silicon dioxide surface and a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring said silicon dioxide surface and said hydrophobic silicon surface into contact; heat treating said contacted first and second Si substrates at a temperature of not lower than 900° C. to bond said first and second Si substrates to each other; and removing a part of said first or said second Si substrate to leave said silicon dioxide sandwiched between a remainder of said first or said second Si substrates and the substrate bonded thereto, thereby providing said SOI substrate.

Claim 2

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a silicon dioxide surface and a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring said silicon dioxide surface and said hydrophobic silicon surface into contact; heat treating said contacted first and second Si substrates at a temperature of not lower than 900° C. to bond said first and second Si substrates to each other; and removing a part of said first or said second Si substrate to leave said silicon dioxide sandwiched between a remainder of said first or said second Si substrates and the substrate bonded thereto, thereby providing said SOI substrate.

Claim 9

A method for the production of an SOI substrate comprising the steps of: preparing a first substrate having a porous silicon layer, a single crystal silicon layer and a silicon dioxide layer successively laminated on a silicon substrate and preparing a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first substrate upon said second Si substrate to bring a surface of said silicon dioxide layer and said hydrophobic silicon surface into contact; heat treating said contacted first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer of said first substrate to leave said single crystal silicon layer and said silicon dioxide layer of said first substrate on said second Si substrate, thereby providing said SOI substrate.

Claim 10

A method for the production of an SOI substrate comprising the steps of: preparing a first substrate having a porous silicon layer, a single crystal silicon layer and a silicon dioxide layer successively laminated on a silicon substrate and preparing a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first substrate upon said second Si substrate to bring a surface of said silicon dioxide layer and said hydrophobic silicon surface into contact; heat treating said contacted first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer of said first substrate to leave said single crystal silicon layer and said silicon dioxide layer of said first substrate on said second Si substrate, thereby providing said SOI substrate.

Claim 18

A method for the production of an SOI substrate comprising the steps of: preparing a first substrate comprising a silicon substrate having a silicon dioxide layer formed on a surface of said silicon substrate and preparing a second substrate having a porous silicon layer and a single crystal silicon layer successively laminated on a silicon substrate; treating a surface of said single crystal silicon layer of said second substrate to form a hydrophobic surface; placing said first substrate upon said second substrate to bring a surface of said silicon dioxide layer and said hydrophobic surface of said single crystal silicon layer into contact; heat treating said first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer from said second substrate to leave said single crystal silicon on said silicon dioxide layer of said first substrate, thereby providing said SOI substrate.

Claim 19

A method for the production of an SOI substrate comprising the steps of: preparing a first substrate comprising a silicon substrate having a silicon dioxide layer formed on a surface of said silicon substrate and preparing a second substrate having a porous silicon layer and a single crystal silicon layer successively laminated on a silicon substrate; treating a surface of said single crystal silicon layer of said second substrate to form a hydrophobic surface; placing said first substrate upon said second substrate to bring a surface of said silicon dioxide layer and said hydrophobic surface of said single crystal silicon layer into contact; heat treating said first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer from said second substrate to leave said single crystal silicon on said silicon dioxide layer of said first substrate, thereby providing said SOI substrate.

Claim 25

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a silicon dioxide surface and a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring said silicon dioxide surface and said hydrophobic silicon surface into contact; heat treating said contacted first and second Si substrates at a temperature of not lower than 900° C. to bond said first and second Si substrates to each other; and removing a part of said first Si substrate to leave said silicon dioxide sandwiched between a remainder of said first Si substrate and said second substrate bonded thereto, thereby providing said SOI substrate wherein the remainder of said first Si substrate is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a peripheral part thereof.

Claim 26

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a silicon dioxide surface and a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring said silicon dioxide surface and said hydrophobic silicon surface into contact; heat treating said contacted first and second Si substrates at a temperature of not lower than 900° C. to bond said first and second Si substrates to each other; and removing a part of said first Si substrate to leave said silicon dioxide sandwiched between a remainder of said first Si substrate and said second substrate bonded thereto, thereby providing said SOI substrate wherein the remainder of said first Si substrate is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a peripheral part thereof.

Claim 29

The method for the production of an SOI substrate according to any one of claims 22 to 24, wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 molecules/cm 2 .

Claim 30

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a porous silicon layer, a single crystal silicon layer and a silicon dioxide layer successively laminated on a silicon substrate and preparing a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring a surface of said silicon dioxide layer and said hydrophobic silicon surface into contact; heat treating said contacted first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer of said first substrate to leave said single crystal silicon layer and said silicon dioxide layer of said first substrate on said second Si substrate, thereby providing said SOI substrate wherein said single crystal silicon is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a periphral part thereof.

Claim 31

A method for the production of an SOI substrate comprising the steps of: preparing a first Si substrate having a porous silicon layer, a single crystal silicon layer and a silicon dioxide layer successively laminated on a silicon substrate and preparing a second Si substrate having a silicon surface; treating said silicon surface of said second Si substrate to form a hydrophobic silicon surface; placing said first Si substrate upon said second Si substrate to bring a surface of said silicon dioxide layer and said hydrophobic silicon surface into contact; heat treating said contacted first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer of said first substrate to leave said single crystal silicon layer and said silicon dioxide layer of said first substrate on said second Si substrate, thereby providing said SOI substrate wherein said single crystal silicon is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a periphral part thereof.

Claim 34

The method for the production of an SOI substrate according to any one of claims 26 to 28, wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 .

Claim 35

A method for the production of an SOI substrate comprising the step of: preparing a first substrate comprising a silicon substrate, having a silicon dioxide layer formed on a surface of said silicon substrate and preparing a second substrate having a porous silicon layer and a single crystal silicon layer sucessively laminated on a silicon substrate; treating a surface of said single crystal silicon layer of said second substrate to form a hydrophobic surface; placing said first substrate upon said second substrate to bring a surface of said silicon dioxide layer and said hydrophobic surface of said single crystal silicon layer into contact; heat treating said first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer from said second substrate to leave said single crystal silicon on said silicon dioxide layer of said first substrate, thereby providing said SOI substrate wherein said single crystal silicon is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a peripheral part thereof.

Claim 36

A method for the production of an SOI substrate comprising the step of: preparing a first substrate comprising a silicon substrate, having a silicon dioxide layer formed on a surface of said silicon substrate and preparing a second substrate having a porous silicon layer and a single crystal silicon layer sucessively laminated on a silicon substrate; treating a surface of said single crystal silicon layer of said second substrate to form a hydrophobic surface; placing said first substrate upon said second substrate to bring a surface of said silicon dioxide layer and said hydrophobic surface of said single crystal silicon layer into contact; heat treating said first and second substrates at a temperature of not lower than 900° C. to bond said first and second substrates; and removing said silicon substrate and said porous silicon layer from said second substrate to leave said single crystal silicon on said silicon dioxide layer of said first substrate, thereby providing said SOI substrate wherein said single crystal silicon is located within 2 mm of a peripheral edge of said SOI substrate and wherein locally distributed large voids are absent from a peripheral part thereof.

Claim 39

The method for the production of an SOI substrate according to any one of claims 30 to 32, wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 molecules/cm 2 .

Claim 44

The method for the production of an SOI substrate according to any one of claims 34 to 37, wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 molecules/cm 2 .

Claim 49

The method for the producton of an SOI substrate according to any one of claims 39 to 42 wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 molecules/cm 2 .

Claim 54

The method for the production of an SOI substrate according to any one of claims 44 to 47, wherein said hydrophobic silicon surface of said second substrate has a water content of not more than 6 x 10 13 molecules/cm 2 .