EP0676796A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor substrate and a method for manufacturing the same
Assignee: Canon Inc
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Filing: 1995-04-04
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Granted: —
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Expires: 2015-04-04
Abstract
Abstract A semiconductor substrate includes a semiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer. In a method for manufacturing such a semiconductor substrate, a semiconductor substrate including a high-density impurity layer at the side of its surface is bonded to another substrate having an insulating layer. Thereafter, the semiconductor substrate is removed, and the impurity density of the remaining high-density impurity layer is reduced by out diffusion. <IMAGE>
Inventors
- 👤 Shunsuke C/O Canon K.K. Inoue
- 👤 Mamoru C/O Canon K.K. Miyawaki
- 👤 Yoshihiko C/O Canon K.K. Fukumoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:37
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136277; G02F1/136281; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
22 words
A semiconductor substrate comprising: emiconductor layer, where the density of an impurity is reduced by out diffusion, provided on an insulating layer.
Claim 2
Dependent Claim
21 words
A semiconductor substrate according to Claim 1, wherein said semiconductor layer comprises silicon, and wherein said insulating layer comprises silicon oxide.
Claim 3
Dependent Claim
21 words
A semiconductor substrate according to Claim 1, wherein said semiconductor layer comprises silicon, and wherein said insulating layer comprises silicon nitride.
Claim 4
Dependent Claim
22 words
A semiconductor substrate according to Claim 1, wherein said semiconductor layer comprises silicon, and wherein said insulating layer comprises silicon nitride oxide.
Claim 5
Independent Claim
66 words
A method for manufacturing a semiconductor substrate comprising the steps of: forming a semiconductor substrate including a high-density impurity layer at the side of its surface; bonding the high-density impurity layer of the semiconductor substrate and an insulating layer provided on another substrate; removing the semiconductor substrate except the high-density impurity layer; and reducing the impurity density of the remaining high-density impurity layer by out diffusion.
Claim 6
Dependent Claim
20 words
A method according to Claim 5, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon oxide.
Claim 7
Dependent Claim
20 words
A method according to Claim 5, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride.
Claim 8
Dependent Claim
21 words
A method according to Claim 5, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride oxide.
Claim 9
Dependent Claim
32 words
A method according to Claim 5, wherein a thin oxide film is formed on the high-density impurity layer before the bonding step, and the bonding is performed after removing the oxide film.
Claim 10
Dependent Claim
31 words
A method according to Claim 5, wherein a thin oxide film is formed on the high-density impurity layer before the bonding step, and the bonding is performed via the oxide film.
Claim 11
Independent Claim
76 words
A method for manufacturing a semiconductor substrate comprising the steps of: forming a semiconductor substrate including an insulating layer in contact with a high-density impurity layer at the side of its surface; bonding the surface of the insulating layer of the semiconductor substrate and a surface of another substrate; removing the semiconductor substrate except the high-density impurity layer and the insulating layer; and reducing the impurity density of the remaining high-density impurity layer by out diffusion.
Claim 12
Dependent Claim
20 words
A method according to Claim 11, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon oxide.
Claim 13
Dependent Claim
20 words
A method according to Claim 11, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride.
Claim 14
Dependent Claim
21 words
A method according to Claim 11, wherein the semiconductor substrate comprises silicon, and wherein the insulating layer comprises silicon nitride oxide.
Claim 15
Dependent Claim
16 words
A method according to Claim 11, wherein the out diffusion is performed under a reduced pressure.
Claim 16
Independent Claim
21 words
A method according to any of Claims 5, 11 and 15, wherein the out diffusion is performed in a reducing gas.
Claim 17
Independent Claim
22 words
A method of manufacturing a semiconductor substrate or device, wherein impurities are out-diffused from a doped layer provided on an insultating layer.
Claim 18
Dependent Claim
40 words
A method according to claim 17, wherein the substrate is formed by bonding together two subsidiary bodies with the doped layer and the insulating layer being provided either by the same subsidiary body or different ones of the subsidiary bodies.
Claim 19
Dependent Claim
23 words
A semiconductor substrate or device whenever manufactured using a method in accordance with any one or any combination of claims 5 to 18.
References Cited (Backward Citations)
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