Process of making semiconductor-on-insulator substrate

Claim 2

A process for preparing a semiconductor substrate which comprises a step of making an entire silicon monocrystalline substrate as a first substrate porous by anodization, a step of making a silicon monocrystalline thin film to epitaxially grow on one of the porous surfaces of the first substrate, a step of oxidizing the surface of the silicon monocrystalline thin film, a step of forming an insulating layer capable of producing reflow by heat treatment over the oxidized surface, a step of bonding the insulating layer to a second substrate and heating the resulting bonded first and second substrates, and a step of selectively etching the porous region.

Claim 3

A process for preparing a semiconductor substrate which comprises a step of making the surface layer on one side of a silicon monocrystalline substrate as a first substrate porous, a step of making a silicon monocrystalline thin film to epitaxially grow on the porous surface of the first substrate, a step of oxidizing the surface of the silicon monocrystalline thin film, a step of forming an insulating layer capable of producing reflow by heat treatment over the oxidized surface, a step of bonding the insulating layer to a second substrate and heating the resulting bonded first and second substrates, a step of removing the non-porous monocrystalline substrate region of the first substrate, and a step of selectively etching the porous silicon region.

Claim 4

A process for preparing a semiconductor substrate which comprises a step of making the surface layer on one side of a silicon monocrystalline substrate as a first substrate porous, a step of making a silicon monocrystalline thin film to epitaxially grow on the porous surface of the first substrate, a step of oxidizing the surface of the silicon monocrystalline thin film, a step of forming an insulating layer capable of producing reflow by heat treatment over the oxidized surface, a step of bonding the insulating layer to a second substrate and heating the resulting bonded first and second substrates, a step of removing the non-porous monocrystalline substrate region of the first substrate, and a step of selectively etching the porous silicon region.

Claim 5

A process according to claim 1 or 2, wherein before the bonding step, the first substrate is heat treated, thereby softening the insulating layer formed on the surface of the first substrate once to improve the surface flatness.

Claim 6

A process according to claim 1 or claim 2, wherein the insulating layer capable of producing reflow by the heat treatment of the first substrate is composed of SiO 2 containing an impurity or a two-layer structure of SiO 2 containing an impurity and Si x N y wherein x and y≠.

Claim 7

A process according to claim 4, wherein the impurity is boron or phosphorus.

Claim 8

A process according to claim 1 or claim 2, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 9

A process according to claim 3, wherein the insulating layer capable of producing reflow by the heat treatment of the first substrate is composed of SiO 2 containing an impurity or a two-layer structure of SiO 2 containing an impurity Si x N y wherein x and y≠.

Claim 10

A process according to claim 7, wherein the impurity is boron or phosphorus.

Claim 11

A process according to claim 3, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 12

A process according to claim 4, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 13

A process according to claim 7, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 14

A process according to claim 5, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 15

A process for preparing a semiconductor substrate, which comprises the steps of: providing a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor layer; forming a first insulating layer on the non-porous monocrystalline semiconductor layer of the first substrate; forming a second insulating layer which can be reflowed by heating on the first insulating layer; bonding the second insulating layer to a second substrate and heating the resulting bonded first and second substrates; and removing the porous monocrystalline semiconductor layer from the bonded first and second substrates to obtain the semiconductor substrate.

Claim 16

A process for preparing a semiconductor substrate, which comprises the steps of: providing a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor layer; forming a first insulating layer on the non-porous monocrystalline semiconductor layer of the first substrate; forming a second insulating layer which can be reflowed by heating on the first insulating layer; bonding the second insulating layer to a second substrate and heating the resulting bonded first and second substrates; and removing the porous monocrystalline semiconductor layer from the bonded first and second substrates to obtain the semiconductor substrate.

Claim 17

A process according to claim 13, wherein the porous monocrystalline semiconductor layer and the non-porous monocrystalline semiconductor layer comprises silicon.

Claim 18

A process according to claim 14, wherein the first insulating layer comprises an oxidized film formed by oxidizing the surface of the non-porous monocrystalline semiconductor layer.

Claim 19

A process according to claim 15, wherein the second insulating layer is formed by diffusing boron into the surface of the oxidized film.

Claim 20

A process according to claim 16, wherein the second insulating layer comprises SiO 2 containing 10% or more of B 2 O 3 .

Claim 21

A process according to claim 15, wherein the second insulating layer is formed by diffusing phosphorus into the surface of the oxidized film.

Claim 22

A process according to claim 18, wherein the second insulating layer comprises SiO 2 containing 20% or more of P 2 O 5 .

Claim 23

A process according to claim 15, wherein the second insulating layer is formed by implanting boron ions or phosphorus ions into the surface of the oxidized film.

Claim 24

A process according to claim 20, wherein the boron ions or phosphorus ions are implanted at a concentration of a range of 1×10 20 to 5×10 21 cm -3 .

Claim 25

A process according to claim 13, wherein the second insulating layer comprises an SiO 2 film containing at least one element of boron and phosphorus formed on the first insulating layer by chemical vapor deposition (CVD).

Claim 26

A process according to claim 22, further comprising a step of forming a silicon nitride film between the first and the second insulating layers.

Claim 27

A process according to claim 23, wherein the silicon nitride film has a thickness of 0.1 to 0.5 μm.

Claim 28

A process according to claim 15, wherein the oxidized film has a thickness of 0.5 to 1.0 μm.

Claim 29

A process according to claim 14, wherein the porous monocrystalline semiconductor layer is formed by making at least a part of a silicon substrate porous by anodization.

Claim 30

A process according to claim 14, wherein the non-porous monocrystalline semiconductor layer comprises a monocrystalline silicon layer epitaxially grown on the porous monocrystalline semiconductor layer by one method selected from thermal CVD, low pressure CVD, plasma CVD, molecular beam epitaxy and sputtering.

Claim 31

A process according to claim 14, wherein the step of removing the porous monocrystalline semiconductor layer is carried out by etching the porous monocrystalline semiconductor layer with an etching solution comprising hydrofluoric acid.

Claim 32

A process according to claim 28, wherein the etching solution comprises a mixed solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.

Claim 33

A process according to claim 14, wherein the first substrate is formed by partly making a part of a silicon substrate porous by anodization to form a porous monocrystalline semiconductor layer and then by forming a non-porous monocrystalline semiconductor layer on the porous monocrystalline semiconductor layer by epitaxial growth, and further comprising, before the step of removing the porous monocrystalline semiconductor layer, removing a portion not made porous of the silicon substrate from the bonded first and second substrates.

Claim 34

A process according to claim 13, further comprising before the bonding a step of reflowing the second insulating layer by heating.

Claim 35

A process according to any one of claims 13 to 31, wherein the second substrate is a silicon substrate.

Claim 36

A process according to claim 32, wherein the second substrate has an oxidized film formed on the surface thereof.

Claim 37

A process according to claim 33, wherein boron is implanted into the surface of the oxidized film of the second substrate.

Claim 38

A process according to any one of claims 13 to 31, wherein the second substrate is a quartz substrate.

Claim 39

A process according to claim 35, wherein phosphorus is implanted into the surface of the quartz substrate.

Claim 40

A process according to claim 8, wherein the selective etching of the porous silicon is carried out in a mixed etching solution containing hydrofluoric acid and hydrogen peroxide and optionally containing an alcohol.