US5374581A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for preparing semiconductor member
Assignee: Canon Inc
•
Filing: 1993-09-27
•
Granted: 1994-12-20
•
Expires: 2013-09-27
Abstract
Abstract A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.
Inventors
- 👤 Takeshi Ichikawa
- 👤 Takao Yonehara
- 👤 Kiyofumi Sakaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:12
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10F; H10F71/00; H10F71/139; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P90/12; H10P90/15; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
94 words
A method for preparing a semiconductor member, characterized by including the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said porous silicon substrate at a first temperature; bonding a surface of said non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing said porous silicon of said bonded substrate by chemical etching; and forming a monocrystalline silicon layer on said non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than said first temperature.
Claim 2
Independent Claim
94 words
A method for preparing a semiconductor member, characterized by including the steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on said porous silicon substrate at a first temperature; bonding a surface of said non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing said porous silicon of said bonded substrate by chemical etching; and forming a monocrystalline silicon layer on said non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than said first temperature.
Claim 3
Dependent Claim
24 words
The method according to claim 1, wherein said another substrate having an insulating material on the surface thereof is a light transparent glass substrate.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said another substrate having an insulating material on the surface thereof is a silicon substrate.
Claim 5
Dependent Claim
31 words
The method for preparing a semiconductor member according to claim 1, characterized in that the method of growing epitaxially a monocrystalline silicon layer at said second temperature is a CVD method.
Claim 6
Dependent Claim
53 words
The method for preparing a semiconductor member according to claim 1, characterized in that the sum of the thickness of said non-porous silicon monocrystalline layer formed on said porous silicon substrate at said first temperature and the thickness of said monocrystalline silicon layer formed at said second temperature is 100 μm or less.
Claim 7
Dependent Claim
29 words
The method for preparing a semiconductor member according to claim 1, characterized in that said non-porous silicon monocrystalline layer formed at said first temperature is formed by epitaxial growth.
Claim 8
Dependent Claim
60 words
The method for preparing a semiconductor member according to claim 1, characterized in that said non-porous silicon monocrystalline layer formed at said first temperature is formed by a method which is selected from the bias sputtering method, the molecular beam epitaxial method, the plasma CVD method, the photo assisted CVD method, the liquid phase growth method, and the CVD method.
Claim 9
Dependent Claim
22 words
The method for preparing a semiconductor member according to claim 1, characterized in that said second temperature is 900° C. or greater.
Claim 10
Dependent Claim
21 words
The method for preparing a semiconductor member according to claim 1, characterized in that said process of making porosity is anodization.
Claim 11
Dependent Claim
22 words
The method for preparing a semiconductor member according to claim 7, characterized in that said anodization is conducted in an HF solution.
Claim 12
Dependent Claim
35 words
The method for preparing a semiconductor member according to claim 1, characterized in that said etching process is carried out after the portion except for said porous silicon surface is covered with an anti-etching film.
References Cited (Backward Citations)
US4177094A
Cited
US4806996A
Cited
US4897362A
Cited
US4962051A
Cited
US5013681A
Cited
US5110748A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-19 | 1998-06-20 | 1998-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-19 | 2002-06-20 | 2002-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-19 | 2006-06-20 | 2006-12-20 | $7700.00 | Window Closed / Lapsed |