US5691231A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing silicon on insulating substrate
Assignee: Renesas Electronics Corp
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Filing: 1997-01-07
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Granted: 1997-11-25
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Expires: 2017-01-07
Abstract
Abstract A first silicon single crystal substrate and a second silicon single crystal substrate are bonded together and the first silicon single crystal substrate is formed thin as an SOI layer. An insulation film is buried in portions of the bonding surface of one of the two silicon single crystal substrates, and in addition, a polycrystal silicon layer is formed on the bonding surface of the silicon single crystal substrate on the side into which the insulation film is buried.
Inventors
- 👤 Kenya Kobayashi
- 👤 Tomohiro Hamajima
- 👤 Kensuke Okonogi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:47
CPC Classifications
H; H10; H10D; H10D86/00; H10P; H10P14/00; H10P14/20; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
192 words
A Silicon On Insulating substrate manufacturing method comprising: a first step in which a buried insulation film is formed in portions of one main surface of a first or second silicon single crystal substrate; a second step in which the surface of the insulation film and the surface of silicon single crystal on the main surface of the silicon single crystal substrate into which said insulation film is buried are made a level surface along the same plane; a third step in which a polycrystal silicon layer is formed on said leveled surface; a fourth step in which the surface of said polycrystal silicon layer is leveled by grinding and polishing; a fifth step in which the leveled surface of said polycrystal silicon layer is bonded together with one main surface of the first or second silicon single crystal substrate into which an insulation film is not buried, and the two substrates are subjected to a heat treatment to unify the two substrates; and a sixth step in which the other main surface of said first silicon single crystal substrate is ground and polished to a thickness necessary for an SOI layer.
Claim 2
Dependent Claim
192 words
A Silicon On Insulating substrate manufacturing method comprising: a first step in which a buried insulation film is formed in portions of one main surface of a first or second silicon single crystal substrate; a second step in which the surface of the insulation film and the surface of silicon single crystal on the main surface of the silicon single crystal substrate into which said insulation film is buried are made a level surface along the same plane; a third step in which a polycrystal silicon layer is formed on said leveled surface; a fourth step in which the surface of said polycrystal silicon layer is leveled by grinding and polishing; a fifth step in which the leveled surface of said polycrystal silicon layer is bonded together with one main surface of the first or second silicon single crystal substrate into which an insulation film is not buried, and the two substrates are subjected to a heat treatment to unify the two substrates; and a sixth step in which the other main surface of said first silicon single crystal substrate is ground and polished to a thickness necessary for an SOI layer.
Claim 3
Dependent Claim
58 words
An SOI substrate manufacturing method according to claim 1 further comprising a step, between said third step and said fourth step or between said fourth step and said fifth step, in which impurities of the same conduction type as the conduction type of said first and second silicon single crystal substrates are introduced into said polycrystal silicon layer.
Claim 4
Dependent Claim
126 words
An SOI substrate manufacturing method according to claim 1 further comprising either an additional step between said second step and said third step in which impurities of the same conduction type as the conduction type of the silicon single crystal substrate are introduced at high concentration into the surface of the silicon single crystal substrate into which said insulation film is buried, on the side into which said insulation film is buried, or, an additional step preceding said fifth step in which impurities of the same conduction type as the silicon substrate conduction type are introduced at high concentration into at least portions not opposing said insulation film of the bonding surface of the silicon single crystal substrate into which said insulation film is not buried.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |