US5250460A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor substrate
Assignee: Canon Inc
•
Filing: 1992-10-09
•
Granted: 1993-10-05
•
Expires: 2012-10-09
Abstract
Abstract A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO 2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.
Inventors
- 👤 Kenji Yamagata
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:20
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10F; H10F71/00; H10F71/139; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P90/12; H10P90/15; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/135; Y10S148/15
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
117 words
A method of producing a semiconductor substrate, comprising the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate having many pores; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; selectively etching said porous single-crystal silicon substrate; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO 2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
Claim 2
Independent Claim
117 words
A method of producing a semiconductor substrate, comprising the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate having many pores; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; selectively etching said porous single-crystal silicon substrate; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO 2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
Claim 3
Independent Claim
134 words
A method of producing a semiconductor substrate, comprising the steps of: forming pores in a surface layer at one side of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on the external surface of the porous silicon layer having many pores formed as above; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; removing the non-porous silicon portion of said single-crystal silicon substrate by grinding; selectively etching said porous silicon layer; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO 2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
Claim 4
Independent Claim
134 words
A method of producing a semiconductor substrate, comprising the steps of: forming pores in a surface layer at one side of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on the external surface of the porous silicon layer having many pores formed as above; sticking a supporting substrate of a desired kind to the surface of the epitaxial layer of single-crystal silicon by using an adhesive of a desired kind therebetween; removing the non-porous silicon portion of said single-crystal silicon substrate by grinding; selectively etching said porous silicon layer; sticking said epitaxial layer fast to a transparent insulating substrate containing SiO 2 as a main constituent; separating said supporting layer from said epitaxial layer by removing said adhesive; and heat-treating the epitaxial layer stuck fast on said transparent insulating layer.
Claim 5
Dependent Claim
21 words
A method of producing a semiconductor substrate according to claim 1 or 2, wherein said adhesive is a thermally softening material.
Claim 6
Dependent Claim
33 words
A method of producing a semiconductor substrate according to claim 1 or 2, wherein said porous silicon portion is selectively etched by using a mixed alcohol solution containing fluorine and hydrogen peroxide water-solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-10-04 | 1997-04-05 | 1997-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-10-04 | 2001-04-05 | 2001-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-10-04 | 2005-04-05 | 2005-10-05 | $7700.00 | Window Closed / Lapsed |