US5616507A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing substrate having semiconductor on insulator
Assignee: Sumco Corp
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Filing: 1995-05-19
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Granted: 1997-04-01
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Expires: 2015-05-19
Abstract
Abstract A polysilicon layer is formed on a surface of a silicon substrate after oxygen ions are implanted into the silicon substrate and an SiO 2 film is formed in the silicon substrate at a position in a prescribed depth from the surface of silicon substrate. A heat treatment is performed to a silicon layer between the polysilicon layer and the SiO 2 film, thereby providing an SOI layer with improved crystal quality.
Inventors
- 👤 Tetsuya Nakai
- 👤 Yasuo Yamaguchi
- 👤 Tadashi Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:54
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
142 words
A method of manufacturing an SOI substrate, comprising the steps of: forming a silicon oxide layer at a position in a prescribed depth from said main surface by implanting oxygen ions into said silicon substrate from the main surface of silicon substrate having an element formation region and an element isolation region; forming a silicon oxide film on said element isolation region; forming a polycrystalline silicon layer on said element formation region and said silicon oxide film; performing a heat treatment to a region of said silicon substrate between said silicon oxide layer and said polycrystalline silicon layer; after said heat treatment, exposing a surface of said silicon oxide film and removing said polycrystalline silicon layer so as to leave the polycrystalline silicon layer on the element formation region; removing said silicon oxide film; and removing said polycrystalline silicon layer by etching.
Claim 2
Independent Claim
142 words
A method of manufacturing an SOI substrate, comprising the steps of: forming a silicon oxide layer at a position in a prescribed depth from said main surface by implanting oxygen ions into said silicon substrate from the main surface of silicon substrate having an element formation region and an element isolation region; forming a silicon oxide film on said element isolation region; forming a polycrystalline silicon layer on said element formation region and said silicon oxide film; performing a heat treatment to a region of said silicon substrate between said silicon oxide layer and said polycrystalline silicon layer; after said heat treatment, exposing a surface of said silicon oxide film and removing said polycrystalline silicon layer so as to leave the polycrystalline silicon layer on the element formation region; removing said silicon oxide film; and removing said polycrystalline silicon layer by etching.
References Cited (Backward Citations)
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