EP0603849A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method for producing a semiconducteur substrate by using a bonding process, and semiconductor stubstrate produced by the same
Assignee: Canon Inc
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Filing: 1993-12-22
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Granted: —
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Expires: 2013-12-22
Abstract
Abstract A semiconductor substrate is produced by bonding a pair of substrate materials together, at least one of which comprises a semiconductor substrate material with or without an insulating layer on a surface thereof. The production includes treating the substrate materials with a suitable liquid such that the pair of substrate materials are immersed in the liquid, the substrate materials are superimposed on each other in the liquid, the substrate materials in their superimposed position are lifted from the liquid, and a portion of the liquid captured between the substrate materials is removed so as to bond the substrate materials together.
Inventors
- 👤 Kiyofumi C/O Canon Kabuashiki Kaisha Sakaguchi
- 👤 Takao C/O Canon Kabuashiki Kaisha Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:44
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
98 words
A method of producing a semiconductor substrate by bonding a pair of substrate materials together, at least one of said substrate materials comprising either a semiconductor substrate material or a semiconductor substrate material having an insulating layer on a surface thereof, said method comprising the steps of: immersing said pair of substrate materials in a liquid; superimposing said substrate materials on each other in said liquid; lifting said substrate materials in a superimposed position thereof from said liquid; and removing a portion of said liquid captured between said substrate materials so as to bond said substrate materials together.
Claim 2
Dependent Claim
18 words
A method according to claim 1, wherein said liquid comprises an extra pure water for washing semiconductor materials.
Claim 3
Dependent Claim
31 words
A method according to claim 1, further comprising the step of imparting a hydrophilic property to the surfaces of said substrate materials before said substrate materials are treated with said liquid.
Claim 4
Dependent Claim
56 words
A method according to claim 1, further comprising the step of imparting a hydrophobic property to the surfaces of said substrate materials before said substrate materials are treated with said liquid, and the step of pressurizing said substrate materials after a captured liquid portion has been removed to thereby closely contact said pair of substrate materials.
Claim 5
Dependent Claim
17 words
A method according to claim 1, wherein said liquid comprises a liquid having a low boiling point.
Claim 6
Dependent Claim
15 words
A method according to claim 1, wherein said liquid comprises a liquid solution of alcohol.
Claim 7
Dependent Claim
16 words
A method according to claim 1, wherein said liquid comprises an aqueous solution of hydrogen peroxide.
Claim 8
Dependent Claim
29 words
A method according to claim 1, wherein a captured liquid portion is removed by heating said substrate materials in their superimposed position to thereby evaporate said captured liquid portion.
Claim 9
Dependent Claim
33 words
A method according to claim 1, wherein a captured liquid portion is removed by introducing said substrate materials in their superimposed position into a vacuum to thereby draw out said captured liquid portion.
Claim 10
Dependent Claim
46 words
A method according to claim 1, wherein a captured liquid portion is removed while said substrate materials in their superimposed position are retained in a jig at least having a guide, or subjected to a load, or subjected to a load while retained in said jig.
Claim 11
Dependent Claim
44 words
A method according to claim 1, wherein at least one of said pair of substrate materials has at least one groove formed in a peripheral portion of a major surface of said substrate material, said groove extending along a radius vector on said surface.
Claim 12
Dependent Claim
20 words
A method according to claim 1, wherein said liquid has a temperature within a range of from 10 to 80°C.
Claim 13
Independent Claim
23 words
A method according to clam 8, wherein said substrate materials are heated to a temperature within a range of from 50 to 400°C.
Claim 14
Dependent Claim
11 words
A semiconductor substrate produced by a method stated in claim 1.
References Cited (Backward Citations)
No citation records indexed.
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