Patent US6127263A successfully refreshed from Google Patents.
US6127263A
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US
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Misalignment tolerant techniques for dual damascene fabrication
Assignee: Applied Materials Inc
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Filing: 1998-07-10
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Granted: 2000-10-03
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Expires: 2018-07-10
Abstract
Abstract The present invention provides integrated circuit fabrication methods and devices wherein dual damascene structures are formed which compensate for misalignment between the via pattern and the trench pattern by widening the trench at the point where the misalignment has occurred. Methods and devices are also provided wherein the trench width is not affected by misalignment thus preventing electrical shorts between closely spaced interconnect lines, this technique results in a reduction of the width of the via. These dual damascene structures utilize two dielectric layers (210 and 216) having similar etching characteristics. Additionally, a hard mask layer (218) and an etch stop layer (214) having similar etching characteristics are used in these structures such that the etching characteristics of the dielectric layers are dissimilar to the etching characteristics of the hard mask and the etch stop layer. A trench (224) is formed in the hard mask layer (218). A photoresist (226) having a via pattern (228) is deposited on the hard mask layer (218) such that the via pattern (228) overlays the trench (224). The via pattern is anisotropically etched through any hard mask layer portion (230) which protrudes inside via pattern (228). This inventive technique results in widening the trench (222) while maintaining the original diameter of the via, even when the via and trench patterns are misaligned. In another embodiment the technique results in a trench (330) which is not widened, thus preventing electrical shorts which can result from misalignment between a via pattern (322) and a trench pattern (326). Etching degradation of etch stop and photoresist layers is reduced because the trench and the via hole are formed simultaneously. Further embodiments of the present invention include the use of single layer masks, such as silicon-based photosensitive materials (418) which form a hard mask upon exposure to radiation. In additional embodiments, manufacturing systems (610) are provided for fabricating IC structures. These systems include a controller (600) which is adapted for interacting with a plurality of fabrication stations (620, 622, 624, 626, 628, 630 and 632).
Inventors
- 👤 Suketu A. Parikh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/087; H10W20/088; H10W20/40; H10W20/41; H10W20/42
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
113 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer on the etch stop layer, such that the first and second dielectric layers comprise materials have similar etching characteristics; d) forming a hard mask layer having a trench pattern on the second dielectric layer; e) depositing a first photoresist on the hard mask layer; f) forming a via pattern over the underlying trench pattern in the first photoresist; and g) anisotropically etching the via pattern through the hard mask layer in a first etching procedure.
Claim 2
Independent Claim
113 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer on the etch stop layer, such that the first and second dielectric layers comprise materials have similar etching characteristics; d) forming a hard mask layer having a trench pattern on the second dielectric layer; e) depositing a first photoresist on the hard mask layer; f) forming a via pattern over the underlying trench pattern in the first photoresist; and g) anisotropically etching the via pattern through the hard mask layer in a first etching procedure.
Claim 3
Dependent Claim
125 words
The method of claim 1 additionally comprising: a) anisotropically etching the via pattern through the second dielectric layer in a second etching procedure; b) anisotropically etching the via pattern through the etch stop layer in a third etching procedure; c) anisotropically etching the trench pattern through the second dielectric layer and simultaneously anisotropically etching the via pattern through the first dielectric layer in a fourth etching procedure; d) removing the first photoresist; and e) anisotropically etching the trench pattern through the etch stop layer and simultaneously etching the hard mask layer to remove the hard mask layer from the second dielectric layer, in a fifth etching procedure, whereby a trench and a via hole are formed which are adapted for fabricating a dual damascene structure.
Claim 4
Dependent Claim
53 words
The method of claim 1 wherein forming a hard mask layer comprises: a) depositing a hard mask material on the second dielectric layer; b) depositing a second photoresist having the trench pattern on the hard mask layer; c) transferring the trench pattern to the hard mask layer; and d) removing the second photoresist.
Claim 5
Dependent Claim
53 words
The method of claim 1 wherein forming a hard mask layer comprises: a) depositing a layer of silicon-based photosensitive material on the second dielectric layer; b) patterning the layer of silicon-based photosensitive material to define the trench pattern; and c) developing the silicon-based material to form a hard mask including the trench pattern.
Claim 6
Dependent Claim
39 words
The method of claim 4 wherein the silicon-based photosensitive material is plasma polymerized methylsilane which is patterned by exposure to radiation such that exposure causes the plasma polymerized methylsilane to form a hard mask comprising plasma polymerized methylsilane oxide.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein the first etching procedure comprises a first etch chemistry which is selective with respect to the second dielectric layer.
Claim 8
Dependent Claim
25 words
The method of claim 6 wherein the third etching procedure comprises a second etch chemistry which is selective with respect to the first dielectric layer.
Claim 9
Dependent Claim
25 words
The method of claim 7 wherein the fourth etching procedure comprises a third etch chemistry which is selective with respect to the etch stop layer.
Claim 10
Dependent Claim
27 words
The method of claim 8 wherein the fifth etching procedure comprises a fourth etch chemistry which is selective with respect to the first and second dielectric layers.
Claim 11
Dependent Claim
16 words
The method of claim 1 wherein the first and second dielectric layers comprise oxide dielectric materials.
Claim 12
Dependent Claim
18 words
The method of claim 10 wherein the etch stop and hard mask layers comprise one or more nitrides.
Claim 13
Dependent Claim
32 words
The method of claim 1 wherein the first and second dielectric layers comprise one or more materials selected from the group consisting of dielectric materials having a dielectric constant which is <3.5.
Claim 14
Dependent Claim
16 words
The method of claim 12 wherein the etch stop and hard mask layers comprise an oxide.
Claim 15
Dependent Claim
23 words
The method of claim 1 wherein the trench has a misalignment compensating portion which is contiguous with the trench and the via hole.
Claim 16
Dependent Claim
26 words
The method of claim 2 additionally comprising: simultaneously filling the trench and the via hole with a conductive material, whereby a dual damascene structure is formed.
Claim 17
Dependent Claim
36 words
The method of claim 15 wherein the dual damascene structure comprises an interconnect line and a via plug, wherein the line has a misalignment compensating segment which is contiguous with the line and the via plug.
Claim 18
Dependent Claim
27 words
The method of claim 15 wherein the conductive material comprises one or more materials selected from the group consisting of metals, alloys, metallic superconductors and nonmetallic superconductors.
Claim 19
Dependent Claim
36 words
The method of claim 15 wherein the conductive material comprises one or more materials selected from the group consisting of Cu, Ag, Al, W, Cu alloys, Ag alloys, Al alloys, W alloys, nickel/germanium and yttrium/barium/copper oxides.
Claim 20
Dependent Claim
31 words
The method of claim 15 wherein filling the trench and the via hole comprises methods selected from the group consisting of chemical vapor deposition, physical vapor deposition, electroplating and electroless plating.
Claim 21
Dependent Claim
30 words
The method of claim 15 additionally comprising depositing a liner material inside the via hole and the trench, prior to filling the via hole and the trench with conductive material.
Claim 22
Independent Claim
193 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer comprising a material having a dielectric constant <3.5 on the etch stop layer, wherein the first and second dielectric layers comprise materials having similar etching characteristics; d) depositing an oxide hard mask layer on the second dielectric layer; such that the oxide hard mask layer and the etch stop layer comprise materials having similar etching characteristics; e) depositing a nitride hard mask layer on the oxide hard mask layer; f) depositing a first photoresist having a trench pattern on the nitride hard mask layer; g) transferring the trench pattern to the nitride hard mask layer; h) removing the first photoresist; i) transferring the trench pattern to the oxide hard mask layer; j) removing the nitride hard mask layer; k) depositing a second photoresist on the oxide hard mask layer; l) forming a via pattern over the underlying trench pattern in the second photoresist; and m) anisotropically etching the via pattern through the hard mask layer.
Claim 23
Independent Claim
193 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer comprising a material having a dielectric constant <3.5 on the etch stop layer, wherein the first and second dielectric layers comprise materials having similar etching characteristics; d) depositing an oxide hard mask layer on the second dielectric layer; such that the oxide hard mask layer and the etch stop layer comprise materials having similar etching characteristics; e) depositing a nitride hard mask layer on the oxide hard mask layer; f) depositing a first photoresist having a trench pattern on the nitride hard mask layer; g) transferring the trench pattern to the nitride hard mask layer; h) removing the first photoresist; i) transferring the trench pattern to the oxide hard mask layer; j) removing the nitride hard mask layer; k) depositing a second photoresist on the oxide hard mask layer; l) forming a via pattern over the underlying trench pattern in the second photoresist; and m) anisotropically etching the via pattern through the hard mask layer.
Claim 24
Dependent Claim
106 words
The method of claim 21 additionally comprising: a) anisotropically etching the via pattern through the second dielectric layer; b) anisotropically etching the via pattern through the etch stop layer; c) removing the second photoresist; d) anisotropically etching the trench pattern through the second dielectric layer and simultaneously anisotropically etching the via pattern through the first dielectric layer; and e) anisotropically etching the trench pattern through the etch stop layer and simultaneously etching the oxide hard mask layer to remove the hard mask layer from the second dielectric layer, whereby a trench and a via hole are formed which are adapted for fabricating a dual damascene structure.
Claim 25
Dependent Claim
23 words
The method of claim 22 wherein the trench has a misalignment compensating portion which is contiguous with the trench and the via hole.
Claim 26
Dependent Claim
26 words
The method of claim 22 additionally comprising: simultaneously filling the trench and the via hole with a conductive material, whereby a dual damascene structure is formed.
Claim 27
Independent Claim
112 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer on the etch stop layer, wherein the first and second dielectric layers comprise materials having similar etching characteristics; d) forming a hard mask layer having a via pattern on the second dielectric layer; e) depositing a first photoresist on the hard mask layer; f) forming a trench pattern over the underlying via pattern in the first photoresist; and g) anisotropically etching the via pattern through the second dielectric layer in a first etching procedure.
Claim 28
Independent Claim
112 words
A method of forming a structure on a substrate, the method comprising: a) depositing a first dielectric layer on the substrate; b) depositing an etch stop layer on the first dielectric layer; c) depositing a second dielectric layer on the etch stop layer, wherein the first and second dielectric layers comprise materials having similar etching characteristics; d) forming a hard mask layer having a via pattern on the second dielectric layer; e) depositing a first photoresist on the hard mask layer; f) forming a trench pattern over the underlying via pattern in the first photoresist; and g) anisotropically etching the via pattern through the second dielectric layer in a first etching procedure.
Claim 29
Dependent Claim
93 words
The method of claim 25 additionally comprising: a) anisotropically etching the trench pattern through the hard mask layer and simultaneously anisotropically etching the via pattern through the etch stop layer in a second etching procedure; b) anisotropically etching the trench pattern through the second dielectric layer and simultaneously anisotropically etching the via pattern through the first dielectric layer in a third etching procedure; c) removing the first photoresist; and d) removing the hard mask layer, whereby a trench and a via hole are formed which are adapted for fabricating a dual damascene structure.
Claim 30
Dependent Claim
53 words
The method of claim 25 wherein forming a hard mask layer comprises: a) depositing a hard mask layer on the second dielectric layer; b) depositing a second photoresist having the via pattern on the hard mask layer; c) transferring the via pattern to the hard mask layer; and d) removing the second photoresist.
Claim 31
Dependent Claim
53 words
The method of claim 25 wherein forming a hard mask layer comprises: a) depositing a layer of silicon-based photosensitive material on the second dielectric layer; b) patterning the layer of silicon-based photosensitive material to define the via pattern; and c) developing the silicon-based material to form a hard mask including the via pattern.
Claim 32
Dependent Claim
39 words
The method of claim 28 wherein the silicon-based photosensitive material is plasma polymerized methylsilane which is patterned by exposure to radiation such that exposure causes the plasma polymerized methylsilane to form a hard mask comprising plasma polymerized methylsilane oxide.
Claim 33
Dependent Claim
25 words
The method of claim 25 wherein the first etching procedure comprises a first etch chemistry which is selective with respect to the hard mask layer.
Claim 34
Dependent Claim
25 words
The method of claim 30 wherein the second etching procedure comprises a second etch chemistry which is selective with respect to the second dielectric layer.
Claim 35
Dependent Claim
25 words
The method of claim 31 wherein the third etching procedure comprises a third etch chemistry which is selective with respect to the etch stop layer.
Claim 36
Dependent Claim
16 words
The method of claim 25 wherein the first and second dielectric layers comprise oxide dielectric materials.
Claim 37
Dependent Claim
18 words
The method of claim 30 wherein the etch stop and hard mask layers comprise one or more nitrides.
Claim 38
Dependent Claim
32 words
The method of claim 25 wherein the first and second dielectric layers comprise one or more materials selected from the group consisting of dielectric materials having a dielectric constant which is <3.5.
Claim 39
Dependent Claim
16 words
The method of claim 35 wherein the etch stop and hard mask layers comprise an oxide.
Claim 40
Dependent Claim
26 words
The method of claim 25 additionally comprising: simultaneously filling the trench and the via hole with a conductive material, whereby a dual damascene structure is formed.
Claim 41
Dependent Claim
27 words
The method of claim 37 wherein the conductive material comprises one or more materials selected from the group consisting of metals, alloys, metallic superconductors and nonmetallic superconductors.
Claim 42
Dependent Claim
36 words
The method of claim 37 wherein the conductive material comprises one or more materials selected from the group consisting of Cu, Ag, Al, W, Cu alloys, Ag alloys, Al alloys, W alloys, nickel/germanium and yttrium/barium/copper oxides.
Claim 43
Dependent Claim
30 words
The method of claim 37 additionally comprising depositing a liner material inside the via hole and the trench, prior to filling the via hole and the trench with conductive material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-03 | 2004-04-03 | 2004-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-03 | 2008-04-03 | 2008-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-03 | 2012-04-03 | 2012-10-03 | $7700.00 | Window Closed / Lapsed |