EP0851483A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminium plug
Assignee: Applied Materials Inc
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Filing: 1997-12-30
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Granted: —
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Expires: 2017-12-30
Abstract
Abstract The present invention generally provides a metallization process for forming a highly integrated interconnect. More particularly, the present invention provides a dual damascene interconnect module that incorporates selective chemical vapor deposition aluminium (CVD Al) via fill with a metal wire, preferably copper, formed within a barrier layer. The invention provides the advantages of having copper wires with lower resistivity (greater conductivity) and greater electromigration resistance than aluminium, a barrier layer between the copper wire and the surrounding dielectric material, void-free, sub-half micron selective CVD Al via plugs, and a reduced number of process steps to achieve such integration.
Inventors
- 👤 Liang-Yuh Chen
- 👤 Ted Guo
- 👤 Roderick Craig Mosely
- 👤 Fusen Chen
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 06:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P52/00; H10P52/40; H10P52/403; H10P95/00; H10P95/06; H10P95/062; H10W20/031; H10W20/032; H10W20/033; H10W20/056; H10W20/057; H10W20/062; H10W20/092; H10W74/00; H10W74/10; H10W74/131; H10W74/137
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
109 words
A method of forming a dual damascene
interconnect in a dielectric layer having a dual
damascene via and wire definition, wherein the via has
a floor exposing a deposition enhancing material, the
method comprising the steps of: (a) selectively chemical vapor depositing a
first conductive metal on the deposition enhancing
material of the via floor to form a plug in the via; (b) depositing a barrier layer over the exposed
surfaces of the plug and dielectric wire definition; (c) depositing a second conductive metal over
the barrier layer to fill the wire definition; and (d) planarizing the second conductive metal,
barrier and dielectric layers to define a conductive
wire.
Claim 2
Dependent Claim
20 words
A method as claimed in claim 1, wherein the
second conductive metal is selected from copper,
aluminium and mixtures thereof.
Claim 3
Dependent Claim
17 words
A method as claimed in claim 1 or claim 2,
wherein the first conductive metal is aluminium.
Claim 4
Independent Claim
117 words
A method of forming a dual damascene
interconnect in a dielectric layer having a dual
damascene via and wire definition, wherein the via has
a floor exposing a deposition enhancing material, the
method comprising the steps of: (a) selectively chemical vapor depositing
aluminium on the deposition enhancing material of the
via floor to form a plug in the via; (b) physical vapor depositing a thin layer of
aluminium over the exposed surfaces of the plug and
wire definition; (c) depositing a barrier layer over the
aluminium layer; (d) depositing a conductive metal over the
barrier layer to fill the wire definition; and (e) planarizing the conductive metal, barrier,
aluminium and dielectric layers to define a conductive
wire.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 4, wherein the
conductive metal is selected from copper, aluminum and
mixtures thereof.
Claim 6
Independent Claim
122 words
A method of forming a dual damascene
interconnect module over a deposition enhancing
material, the method comprising the steps of: (a) forming a dielectric layer over the
deposition enhancing material; (b) etching the dielectric layer to form a dual
damascene via and wire definition, wherein the via has
a floor exposing a deposition enhancing material; (c) selectively chemical vapor depositing a
conductive material on the deposition enhancing
material of the via floor to form a plug in the via; (d) depositing a barrier layer over the exposed
surfaces of the plug and wire definition; (e) physical vapor depositing copper over the
barrier layer to fill the wire definition; and (f) planarizing the copper, barrier and
dielectric layers to define a conductive wire.
Claim 7
Independent Claim
23 words
A method as claimed in any one of claims 1
to 6, wherein the step of planarizing is performed by
chemical mechanical polishing.
Claim 8
Dependent Claim
13 words
A method as claimed in claim 6, wherein the
conductive material is aluminium.
Claim 9
Independent Claim
128 words
A method of forming a dual damascene
interconnect module, the method comprising the steps
of: (a) forming a dielectric layer over a deposition
enhancing material; (b) etching the dielectric layer to form a dual
damascene via and wire definition, wherein the via has
a floor exposing the deposition enhancing material; (c) selectively chemical vapor depositing
aluminium on the deposition enhancing material of the
via floor to form a plug in the via; (d) physical vapor depositing a thin layer of
aluminium over the exposed surfaces of the plug and
wire definition; (e) depositing a barrier layer over the
aluminium layer; (f) physical vapor depositing copper over the
barrier layer to fill the wire definition; and (g) planarizing the upper surface of the
structure to define a conductive wire.
Claim 10
Independent Claim
23 words
A method as claimed in any one of claims 1
to 9, wherein the deposition steps are performed in an
integrated processing system.
Claim 11
Independent Claim
33 words
A method as claimed in any one of claims 1
to 10, wherein the barrier layer comprises a material
selected from titanium, titanium nitride, tantalum,
tantalum nitride, doped silicon, aluminium and
aluminium oxides.
Claim 12
Independent Claim
40 words
A method as claimed in any one of claims 6
to 11, wherein the deposition enhancing material is
provided by a barrier layer of a material selected
from titanium, titanium nitride, tantalum, tantalum
nitride, doped silicon, aluminium and aluminium
oxides.
Claim 13
Independent Claim
170 words
A method of forming a multilevel metal
interconnect, the method comprising the steps of: (a) providing a layer of a deposition enhancing
material on a workpiece; (b) forming a dielectric layer over the exposed
layer of deposition enhancing material; (c) etching the dielectric layer to form a dual
damascene via and wire definition, wherein the via has
a floor exposing a deposition enhancing material; (d) selectively chemical vapor depositing
aluminium on the deposition enhancing material of the
via floor to form a plug in the via; (e) physical vapor depositing a thin layer of
aluminium over the exposed surfaces of the plug and
wire definition; (f) depositing a first barrier layer over the
aluminium layer; (g) physical vapor depositing copper over the
barrier layer to fill the wire definition; (h) planarizing the copper, barrier, aluminium
and dielectric layers to define a conductive wire; (i) depositing a second barrier layer over the
planarized layers, wherein the second barrier layer is
a deposition enhancing material; and (j) repeating steps (b) through (h).
Claim 14
Dependent Claim
21 words
A method as claimed in claim 13, further
comprising the step of applying a passivating layer
over the top planarized layer.
References Cited (Backward Citations)
No citation records indexed.
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