US5897369A
Expired / Lapsed
US
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Method for forming interconnection of a semiconductor device
Assignee: SK Hynix Inc
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Filing: 1996-09-16
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Granted: 1999-04-27
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Expires: 2016-09-16
Abstract
Abstract A method for forming an interconnection of a semiconductor device, includes the steps of forming an insulating layer on a substrate on which a lower conductive layer is formed, selectively removing the insulating layer to form a first connecting hole and a second connecting hole for the pattern of an upper conductive layer, growing a first conductive material in the first connecting hole to form a buried plug and then depositing a second conductive material on the surface of the insulating layer to form a barrier layer, and depositing a third conductive material on the barrier layer to fill the second connecting hole and then patterning it to form an upper conductive layer.
Inventors
- 👤 Young Kwon Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:13
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/031; H10W20/032; H10W20/033; H10W20/036; H10W20/042; H10W20/045; H10W20/056; H10W20/063; H10W20/076; H10W20/40; H10W20/41; H10W20/438
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
116 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming an insulating layer on a substrate having a lower conductor layer formed thereon, the insulating layer defining a hole portion extending from the lower conductor layer; filling the hole portion with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition with a pressure of 0.5-5 torr, a flux of 100-1000 sccm and a temperature of 130-170° C.; forming a second conductive layer on the first conductive layer and the insulating layer; and forming a third conductive layer on the second conductive layer so as to form an interconnection of a semiconductor device.
Claim 2
Independent Claim
116 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming an insulating layer on a substrate having a lower conductor layer formed thereon, the insulating layer defining a hole portion extending from the lower conductor layer; filling the hole portion with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition with a pressure of 0.5-5 torr, a flux of 100-1000 sccm and a temperature of 130-170° C.; forming a second conductive layer on the first conductive layer and the insulating layer; and forming a third conductive layer on the second conductive layer so as to form an interconnection of a semiconductor device.
Claim 3
Dependent Claim
44 words
A method for forming an interconnection of a semiconductor device as claimed in claim 1, wherein the second conductive layer is comprised of either a metal or a metal compound, the metal compound including TiN or TiW, and the metal including Ti or W.
Claim 4
Dependent Claim
32 words
A method for forming an interconnection of a semiconductor device as claimed in claim 1, wherein the second conductive layer prevents a diffusion of a main material constituting the third conductive layer.
Claim 5
Dependent Claim
23 words
A method for forming an interconnection of a semiconductor device as claimed in claim 1, wherein the third conductive layer includes copper (Cu).
Claim 6
Dependent Claim
38 words
A method for forming an interconnection of a semiconductor device as claimed in claim 4, wherein as a liquid source of the copper, (hfac)Cu(TMVS) is used and as a solid source of the copper, Cu(hfac) 2 is used.
Claim 7
Dependent Claim
64 words
A method for forming an interconnection of a semiconductor device as claimed in claim 1, wherein the step of forming the insulating layer includes the steps of: forming a first connecting hole extending from a top surface of the lower conductor layer, and forming a second connecting hole extending from the first connecting hole, the first and second connecting holes forming the hole portion.
Claim 8
Dependent Claim
32 words
A method for forming an interconnection of a semiconductor device as claimed in claim 6, wherein the filling step is carried out prior to the step of forming the second connecting hole.
Claim 9
Dependent Claim
49 words
A method for forming an interconnection of a semiconductor device as claimed in claim 6, wherein the step of forming the second conductive layer includes the step of: depositing a second conductive material so as to define a trench above the first connecting hole in the second connecting hole.
Claim 10
Dependent Claim
64 words
A method for forming an interconnection of a semiconductor device as claimed in claim 8, wherein the step of forming the third conductive layer includes the steps of: depositing a third conductive material, and removing portions of the third conductive material so that an exposed surface of the third conductive material is substantially coplanar with surfaces of the second conductive layer surrounding the trench.
Claim 11
Dependent Claim
46 words
A method for forming an interconnection of a semiconductor device as claimed in claim 9, wherein the removing step includes the step of: etching back the second conductive material and the third conductive material using a halogen group gas or a chemical mechanical polishing (CMP) method.
Claim 12
Dependent Claim
25 words
A method for forming an interconnection of a semiconductor device as claimed in claim 9, wherein the third conductive material is comprised of copper (Cu).
Claim 13
Dependent Claim
38 words
A method for forming an interconnection of a semiconductor device as claimed in claim 11, wherein as a liquid source of the copper, (hfac)Cu(TMVS) is used, and as a solid source of the copper, Cu(hfac) 2 is used.
Claim 14
Dependent Claim
38 words
A method for forming an interconnection of a semiconductor device as claimed in claim 8, wherein the second conductive material is comprised of either a metal compound including TiN or TiW, or a metal including Ti or W.
Claim 15
Dependent Claim
34 words
A method for forming an interconnection of a semiconductor device as claimed in claim 1, wherein the first conductive material is comprised of one of aluminum (Al), silver (Ag), and a metal alloy thereof.
Claim 16
Dependent Claim
52 words
A method for forming an interconnection of a semiconductor device as claimed in claim 14, wherein when the first conductive material is comprised of the aluminum, the metal organic chemical vapor deposition is carried out to deposit the first conductive material using dimethylethylamine alane (DMEAA) as a source of a organic metal.
Claim 17
Independent Claim
136 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer; filling the hole with a first conductive material to form a first conductive layer; forming second and third insulating layers on the first insulating layer to define a trench above the hole; and forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device, wherein the step of forming the second and third insulating layers includes the steps of, forming the second insulating layer on the first insulating layer and on the first conductive layer, and forming the third insulating layer on the second insulating layer.
Claim 18
Independent Claim
136 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer; filling the hole with a first conductive material to form a first conductive layer; forming second and third insulating layers on the first insulating layer to define a trench above the hole; and forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device, wherein the step of forming the second and third insulating layers includes the steps of, forming the second insulating layer on the first insulating layer and on the first conductive layer, and forming the third insulating layer on the second insulating layer.
Claim 19
Dependent Claim
46 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the filling step includes the steps of: growing the first conductive material in the hole and over the first insulating layer, and selectively removing portions of the first conductive material.
Claim 20
Dependent Claim
50 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the step of forming the second and second insulating layers further includes the step of: removing portions of the third insulating layer and a portion of the first conductive layer to define the trench.
Claim 21
Dependent Claim
94 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the step of forming the second and third conductive layers includes the steps of: deposing a second conductive material on the first conductive layer to form the second conductive layer, deposing a third conductive layer over the deposited second conductive material to form the third conductive layer, and removing portions of the second and third conductive materials so that an exposed surface of the third conductive material is substantially coplanar with a surface of the third insulating layer.
Claim 22
Dependent Claim
43 words
A method for forming an interconnection of a semiconductor device as claimed in claim 19, wherein the removing step includes the step of: etching back the second and third conductive materials using a halogen group gas or a chemical mechanical polishing (CMP) method.
Claim 23
Dependent Claim
39 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the first conductive material is comprised of either a metal or a metal alloy thereof, the metal including aluminum (Al) or silver (Ag).
Claim 24
Dependent Claim
52 words
A method for forming an interconnection of a semiconductor device as claimed in claim 21, wherein when the first conductive material is comprised of the aluminum, a metal organic chemical vapor deposition is carried out to deposit the first conductive material using dimethylethylamine alane (DMEAA) as a source of a organic metal.
Claim 25
Dependent Claim
37 words
A method for forming an interconnection of a semiconductor device as claimed in claim 22, wherein during the organic chemical vapor deposition, pressure of 0.5˜5 torr, flux of 100˜1000 sccm and temperature of 130˜170° C. are obtained.
Claim 26
Dependent Claim
38 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the second conductive layer is comprised of either a metal compound including TiN or TiW, or a metal including Ti or W.
Claim 27
Dependent Claim
34 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the second conductive layer functions to prevent a diffusion of a main material constituting the third conductive layer.
Claim 28
Dependent Claim
25 words
A method for forming an interconnection of a semiconductor device as claimed in claim 16, wherein the third conductive layer is comprised of copper (Cu).
Claim 29
Dependent Claim
35 words
A method for forming an interconnection of a semiconductor device as claimed in claim 26, wherein a liquid source of the copper includes (hfac)Cu(TMVS) and a solid source of the copper includes Cu(hfac) 2 .
Claim 30
Independent Claim
119 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer; filling the hole with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition having a pressure of 0.5-5 torr, a flux of 100-1000 sccm, and a temperature of 130-170° C.; forming second and third insulating layers on the first insulating layer to define a trench above the hole; and forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device.
Claim 31
Independent Claim
119 words
A method for forming an interconnection of a semiconductor device, comprising the steps of: forming a first insulating layer on a substrate having a lower conductor layer formed thereon, the first insulating layer defining a hole extending from the lower conductor layer; filling the hole with a first conductive material to form a first conductive layer, by using a metal organic chemical vapor deposition having a pressure of 0.5-5 torr, a flux of 100-1000 sccm, and a temperature of 130-170° C.; forming second and third insulating layers on the first insulating layer to define a trench above the hole; and forming second and third conductive layers in the trench so as to form an interconnection of a semiconductor device.
Claim 32
Dependent Claim
57 words
A method for forming an interconnection of a semiconductor device as claimed in claim 28, wherein the step of forming the second and third insulating layers includes the steps of: forming the second insulating layer on the first insulating layer and on the first conductive layer, and forming the third insulating layer on the second insulating layer.
References Cited (Backward Citations)
US5270254A
Cited
US5284799A
Cited
US5305519A
Cited
US5312774A
Cited
US5470792A
Cited
US5592024A
Cited
US5534462A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-26 | 2002-10-26 | 2003-04-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-26 | 2006-10-26 | 2007-04-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-26 | 2010-10-26 | 2011-04-27 | $7700.00 | Window Closed / Lapsed |