US6110531A — Method and apparatus for preparing integrated cir…

Claim 1

Independent Claim 163 words

A method of fabricating an integrated circuit including a thin film, said method comprising steps of: (a) providing at least one liquid precursor; (b) forming a mist of said at least one liquid precursor; (c) gasifying said mist to form a gasified precursor comprising amounts of a bismuth-containing organic compound, a metal polyalkoxide compound, and a lead-containing organic compound without breaking the chemical bonds of said compounds; (d) transporting said gasified precursor to a deposition reactor using at least one carrier gas; (e) flowing oxygen gas into said deposition reactor; (f) mixing said gasified precursor, said at least one carrier gas and said oxygen gas to form a reactant gas in said deposition reactor; (g) providing a substrate in a deposition reactor; and (h) reacting said reactant gas in said deposition reactor to form said thin film on said substrate, wherein said thin film comprises a layered superlattice material represented by a formula of: (Sr.sub.a Ba.sub.b Pb.sub.c)(Nb.sub.x Ta.sub.y)Bi.sub.2 O.sub.9 where a+b+c=1, 0≦c≦1, x+y=2.

Claim 2

Independent Claim 163 words

A method of fabricating an integrated circuit including a thin film, said method comprising steps of: (a) providing at least one liquid precursor; (b) forming a mist of said at least one liquid precursor; (c) gasifying said mist to form a gasified precursor comprising amounts of a bismuth-containing organic compound, a metal polyalkoxide compound, and a lead-containing organic compound without breaking the chemical bonds of said compounds; (d) transporting said gasified precursor to a deposition reactor using at least one carrier gas; (e) flowing oxygen gas into said deposition reactor; (f) mixing said gasified precursor, said at least one carrier gas and said oxygen gas to form a reactant gas in said deposition reactor; (g) providing a substrate in a deposition reactor; and (h) reacting said reactant gas in said deposition reactor to form said thin film on said substrate, wherein said thin film comprises a layered superlattice material represented by a formula of: (Sr.sub.a Ba.sub.b Pb.sub.c)(Nb.sub.x Ta.sub.y)Bi.sub.2 O.sub.9 where a+b+c=1, 0≦c≦1, x+y=2.

Claim 3

Independent Claim 164 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing: a liquid precursor suitable for forming said compound; and a deposition reactor containing a substrate; said liquid precursor comprising at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of said liquid precursor using a venturi mister; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film of said complex compound on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film in an active component of said integrated circuit.

Claim 4

Independent Claim 164 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing: a liquid precursor suitable for forming said compound; and a deposition reactor containing a substrate; said liquid precursor comprising at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of said liquid precursor using a venturi mister; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film of said complex compound on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film in an active component of said integrated circuit.

Claim 5

Dependent Claim 49 words

A method as in claim 2 wherein said step of forming a mist of said liquid precursor using a venturi mister comprises flowing a gas across an open throat of a tube containing said liquid precursor, with the flow of said gas being substantially parallel to said open throat.

Claim 6

Dependent Claim 13 words

A method as in claim 3 wherein said tube is a capillary tube.

Claim 7

Dependent Claim 25 words

A method as in claim 2 and further including a step of flowing oxygen gas into said deposition reactor prior to said step of reacting.

Claim 8

Dependent Claim 25 words

A method as in claim 2 and further including a step of mixing said gasified precursor with oxygen gas prior to said step of reacting.

Claim 9

Dependent Claim 41 words

A method as in claim 2 wherein said liquid precursor includes a metal compound including at least one of said metals, and wherein said step of gasifying comprises gasifying said liquid precursor without breaking the chemical bonds of said metal compound.

Claim 10

Dependent Claim 14 words

A method as in claim 2 wherein said compound comprises a layered superlattice material.

Claim 11

Dependent Claim 30 words

A method as in claim 2 wherein said layered superlattice material contains a superlattice generator element selected from the group consisting of bismuth, yttrium, scandium, lanthanum, antimony, chromium, and thallium.

Claim 12

Dependent Claim 46 words

A method as in claim 2 wherein said liquid precursor comprises a bismuth-containing organic compound selected from the group consisting of trimethyl bismuth (Bi(CH 3 ) 3 ), triethyl bismuth (Bi(C 2 H 7 ) 3 ), triphenyl bismuth, Bi-tertiary butoxide, Bi-tertiary pentoxide, and Bi-tertiary amyloxide.

Claim 13

Dependent Claim 42 words

A method as in claim 2 wherein said at least one metal polyalkoxide compound comprises chemical elements in proportions represented by a formula of: (Sr.sub.d Ba.sub.e)((Nb.sub.p Ta.sub.q)(OR.sub.6).sub.2 where d+e=1, p+q=1, R is C 2 H 5 or CH(CH 3 ) 2 .

Claim 14

Dependent Claim 28 words

A method as in claim 8 wherein said layered superlattice material is a material represented by a formula of: (Sr.sub.a Ba.sub.b Pb.sub.c)(Nb.sub.x Ta.sub.y)Bi.sub.2 O.sub.9 where a+b+c=1, 0≦c≦1, x+y=2.

Claim 15

Dependent Claim 25 words

A method as in claim 2 wherein said step of gasifying comprises heating at a temperature at which said metal polyalkoxide compound does not decompose.

Claim 16

Dependent Claim 13 words

A method as in claim 13 wherein said temperature is below 300° C.

Claim 17

Dependent Claim 13 words

A method as in claim 13 wherein said temperature is below 200° C.

Claim 18

Dependent Claim 81 words

A method as in claim 2 further comprising at least one step of treating said thin film at temperatures of from 400° C. to 900° C. to crystallize said thin film in a phase including more grains with a high polarizability orientation than prior to said at least one step of treating, whereby said at least one step of treating is RTP, oxygen furnace annealing or a second anneal after an electrode or other contact to the thin film is formed.

Claim 19

Dependent Claim 23 words

A method as in claim 2 wherein said step of reacting includes a step of plasma-exciting said gasified precursor in said deposition reactor.

Claim 20

Dependent Claim 27 words

A method as in claim 2 wherein said step of reacting comprises a step of heating said substrate to a temperature between 300° C. and 600° C.

Claim 21

Dependent Claim 21 words

A method as in claim 2 and further including a step of prebaking said substrate prior to said step of reacting.

Claim 22

Dependent Claim 19 words

A method as in claim 2 wherein said step of completing comprises forming an electrode on said thin film.

Claim 23

Dependent Claim 24 words

A method as in claim 2 wherein said step of flowing comprises flowing said gasified precursor through a showerhead injector into said deposition reactor.

Claim 24

Independent Claim 184 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing: a liquid precursor suitable for forming said compound; and a deposition system comprising a first chamber, a deposition chamber containing a substrate, and a showerhead separating said first chamber and said deposition chamber; wherein said liquid precursor comprises at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of said liquid precursor; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor through said showerhead into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film of said layered superlattice material compound in an active component of said integrated circuit.

Claim 25

Independent Claim 184 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing: a liquid precursor suitable for forming said compound; and a deposition system comprising a first chamber, a deposition chamber containing a substrate, and a showerhead separating said first chamber and said deposition chamber; wherein said liquid precursor comprises at least one metal polyalkoxide compound containing said at least two metals, said at least two metals selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of said liquid precursor; (c) gasifying said mist to form a gasified precursor; (d) flowing said gasified precursor through said showerhead into said deposition reactor; (e) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (f) completing said integrated circuit to include at least a portion of said thin film of said layered superlattice material compound in an active component of said integrated circuit.

Claim 26

Dependent Claim 18 words

A method as in claim 22 and wherein said step of gasifying takes place in said first chamber.

Claim 27

Dependent Claim 33 words

A method as in claim 22 and wherein said step of gasifying takes place outside of said first chamber and further including a step of transporting said gasified precursor to said first chamber.

Claim 28

Dependent Claim 18 words

A method as in claim 22 and further including a step of mixing said gasified precursor with oxygen.

Claim 29

Dependent Claim 17 words

A method as in claim 25 wherein said step of mixing takes place in said first chamber.

Claim 30

Dependent Claim 25 words

A method as in claim 22 wherein said step of gasifying comprises gasifying said mist without breaking the chemical bonds of said metal polyalkoxide compound.

Claim 31

Dependent Claim 14 words

A method as in claim 22 wherein said compound comprises a layered superlattice material.

Claim 32

Dependent Claim 42 words

A method as in claim 22 wherein said at least one metal polyalkoxide compound comprises chemical elements in proportions represented by a formula of: (Sr.sub.d Ba.sub.e)((Nb.sub.p Ta.sub.q)(OR).sub.6).sub.2 where d+e=1, p+q=1, R is C 2 H 5 or CH(CH 3 ) 2 .

Claim 33

Independent Claim 167 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing a plurality of liquid precursors each containing a metal compound containing at least one of said two metals, wherein said at least two metals are selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of each of said liquid precursors; (c) mixing said mists to create a combined mist; (d) gasifying said combined mist to form a gasified precursor; (e) transporting said gasified precursor to a deposition reactor using at least one carrier gas; and (f) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (i) completing said integrated circuit to include at least a portion of said thin film of said compound in an active component of said integrated circuit.

Claim 34

Independent Claim 167 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing a plurality of liquid precursors each containing a metal compound containing at least one of said two metals, wherein said at least two metals are selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) forming a mist of each of said liquid precursors; (c) mixing said mists to create a combined mist; (d) gasifying said combined mist to form a gasified precursor; (e) transporting said gasified precursor to a deposition reactor using at least one carrier gas; and (f) reacting said gasified precursor in said deposition reactor to form said thin film on said substrate; and (i) completing said integrated circuit to include at least a portion of said thin film of said compound in an active component of said integrated circuit.

Claim 35

Independent Claim 160 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing a plurality of liquid precursors suitable for forming said compound; and a deposition reactor containing a substrate wherein said at least two metals are contained in said liquid precursors and selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) flowing said liquid precursors at controlled flow rates to a mixer; (c) mixing said liquid precursors to form a combined liquid precursor just prior to forming a mist; (d) forming a mist of said combined liquid precursor; (e) gasifying said mist to form a gasified precursor; (f) flowing said gasified precursor into said deposition reactor; and (g) reacting said gasified precursor in said deposition reactor to form said thin film of said compound on said substrate.

Claim 36

Independent Claim 160 words

A method of fabricating an integrated circuit including a thin film of a compound containing at least two metals, said method comprising steps of: (a) providing a plurality of liquid precursors suitable for forming said compound; and a deposition reactor containing a substrate wherein said at least two metals are contained in said liquid precursors and selected from the group consisting of strontium, calcium, barium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, molybdenum, vanadium, ruthenium and thallium; (b) flowing said liquid precursors at controlled flow rates to a mixer; (c) mixing said liquid precursors to form a combined liquid precursor just prior to forming a mist; (d) forming a mist of said combined liquid precursor; (e) gasifying said mist to form a gasified precursor; (f) flowing said gasified precursor into said deposition reactor; and (g) reacting said gasified precursor in said deposition reactor to form said thin film of said compound on said substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2003-08-29	2004-02-28	2004-08-29	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2007-08-29	2008-02-28	2008-08-29	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2011-08-29	2012-02-28	2012-08-29	$7700.00	Window Closed / Lapsed

Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition

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