US5468679A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
Assignee: Symetrix Corp
•
Filing: 1993-11-18
•
Granted: 1995-11-21
•
Expires: 2013-11-18
Abstract
Abstract A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed.
Inventors
- 👤 Carlos A. Paz de Araujo
- 👤 Michael C. Scott
- 👤 Joseph D. Cuchiaro
- 👤 Larry D. McMillan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:11
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; B; B05; B05D; B05D1/00; B05D1/60; B05D3/00; B05D3/04; B05D3/0493; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/448; C23C16/4486; C23C16/455; C23C16/45561; C23C16/45563; C23C16/4558; C23C16/46; C23C16/48; C23C16/482; C23C16/52; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; C23C18/125; C23C18/1279; C23C18/1283; C23C18/1295; C23C26/00; C23C26/02; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; C30B7/005; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10B; H10B12/00; H10B12/30; H10B53/00; H10B53/30; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/077; H10N30/078; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/65; H10P14/6516; H10P14/6529; H10P14/668; H05; H05K; H05K3/00; H05K3/10; H05K3/105; H10P14/6342; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
93 words
A method of fabricating an integrated circuit including a layered superlattice material, said method comprising the steps of: providing an integrated circuit substrate and a precursor liquid including a plurality of metal moieties in effective amounts for spontaneously forming a layered superlattice material upon thermal treatment of said precursor liquid; forming a film of said precursor on said integrated circuit substrate; heating said film to form a layered superlattice material on said integrated circuit substrate; and completing the fabrication of said integrated circuit substrate to form thereon a plurality of interconnected electrical devices.
Claim 2
Independent Claim
93 words
A method of fabricating an integrated circuit including a layered superlattice material, said method comprising the steps of: providing an integrated circuit substrate and a precursor liquid including a plurality of metal moieties in effective amounts for spontaneously forming a layered superlattice material upon thermal treatment of said precursor liquid; forming a film of said precursor on said integrated circuit substrate; heating said film to form a layered superlattice material on said integrated circuit substrate; and completing the fabrication of said integrated circuit substrate to form thereon a plurality of interconnected electrical devices.
Claim 3
Dependent Claim
27 words
A method as in claim 1 wherein said providing step includes a step of preparing a metal carboxylate having carboxylate ligands up to eight carbons in length.
Claim 4
Dependent Claim
14 words
A method as in claim 2 wherein said metal carboxylate is a metal 2-ethylhexanoate.
Claim 5
Dependent Claim
23 words
A method as in claim 1 wherein said solvent comprises a compound selected from the group consisting of alcohols, aromatic hydrocarbons, and esters.
Claim 6
Dependent Claim
12 words
A method as in claim 1, wherein said solvent is 1,4 dioxane.
Claim 7
Dependent Claim
24 words
A method as in claim 1 wherein said step of heating includes a step of drying at a temperature of 200° C. or less.
Claim 8
Dependent Claim
48 words
A method as in claim 1 wherein said providing step includes a step of selecting said metal moleties from a group consisting of strontium, calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium, zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, thallium, oxygen, chlorine, fluorine, and mixtures thereof.
Claim 9
Dependent Claim
48 words
A method as in claim 7, wherein said selecting step includes a step of mixinq said metal moleties to form a material selected from a group consisting of strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, barium bismuth tantalate, lead bismuth tantalate, and barium bismuth niobate.
Claim 10
Dependent Claim
23 words
The method as set forth in claim 1, wherein said heating step includes a step of annealing said film in an oxygen-rich environment.
Claim 11
Dependent Claim
29 words
The method as set forth in claim 9, wherein said annealing step includes a step of baking said film at a temperature ranging from 500° C. to 800° C.
Claim 12
Dependent Claim
28 words
The method as set forth in claim 10, wherein said annealing step is preceded by a step of drying said film at a temperature less than 200° C.
Claim 13
Independent Claim
83 words
A method of fabricating a layered superlattice material comprising the steps of: providing a support and a precursor liquid containing a plurality of metal moieties in effective amounts for spontaneously forming a layered superlattice material upon thermal treatment of said precursor liquid; forming a film of said precursor liquid to said support; and heating said precursor on said support to form a layered superlattice material containing said metal on said support; and sputtering said layered superlattice material from said support onto a substrate.
Claim 14
Independent Claim
83 words
A method of fabricating a layered superlattice material comprising the steps of: providing a support and a precursor liquid containing a plurality of metal moieties in effective amounts for spontaneously forming a layered superlattice material upon thermal treatment of said precursor liquid; forming a film of said precursor liquid to said support; and heating said precursor on said support to form a layered superlattice material containing said metal on said support; and sputtering said layered superlattice material from said support onto a substrate.
Claim 15
Dependent Claim
14 words
A method as in claim 12 wherein said substrate comprises an integrated circuit wafer.
Claim 16
Independent Claim
107 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer, a support, and a precursor liquid comprising a plurality of metal moieties in effective amounts for yielding a layered superlattice material from said precursor upon thermal treatment of said precursor metal carboxylates in a solvent; applying said precursor to said support to form a sputtering target; sputtering said target to form a sputter-deposited layer on said integrated circuit wafer; treating said sputter-deposited layer to form a layered superlattice material on said wafer; and completing fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 17
Independent Claim
107 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer, a support, and a precursor liquid comprising a plurality of metal moieties in effective amounts for yielding a layered superlattice material from said precursor upon thermal treatment of said precursor metal carboxylates in a solvent; applying said precursor to said support to form a sputtering target; sputtering said target to form a sputter-deposited layer on said integrated circuit wafer; treating said sputter-deposited layer to form a layered superlattice material on said wafer; and completing fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
References Cited (Backward Citations)
EP0125507A2
Cited
US4817124A
Cited
US5028455A
Cited
US4752501A
Cited
US5217754A
Cited
JPH01179423A
Cited
US4963390A
Cited
JPH02232974A
Cited
EP0415751A1
Cited
US5146299A
Cited
US5034246A
Cited
US5236874A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-11-20 | 1999-05-22 | 1999-11-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-11-20 | 2003-05-22 | 2003-11-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-11-20 | 2007-05-22 | 2007-11-21 | $7700.00 | Window Closed / Lapsed |