EP0415751A1
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EP
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Thin film capacitor and manufacturing method thereof
Assignee: NEC Corp
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Filing: 1990-08-30
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Granted: —
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Expires: 2010-08-30
Abstract
Abstract This film capacitors in accordance with the present invention include a silicon electrode (22), a first electrode layer (24) consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereby, formed on the silicon electrode, a second electrode layer (25) formed on it consisting of platinum, palladium or rhodium, a dielectric layer (26) formed on it consisting of an oxide ferroelectric substance such as BaTiO₃ and a third electrode layer (27) formed on top of it. As the first electrode layer, use may also be made of rhenium oxide, osmium oxide, rhodium oxide or iridium oxide.
Inventors
- 👤 Yoichi Miyasaka
- 👤 Shogo Matsubara
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 11:52
CPC Classifications
H; H10; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
105 words
A thin film capacitor comprising: a silicon electrode; a first electrode layer consisting essentially of a member selected from the group consisting of (a) titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereof; and (b) rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, formed on said silicon electrode; a second electrode layer consisting essentially of a high-melting point noble metal formed on said first electrode layer; a dielectic layer consisting essentially of an oxide ferroelectric material formed on said second electrode layer; and a third electrode layer formed on said dielectric layer.
Claim 2
Dependent Claim
105 words
A thin film capacitor comprising: a silicon electrode; a first electrode layer consisting essentially of a member selected from the group consisting of (a) titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and compounds thereof; and (b) rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, formed on said silicon electrode; a second electrode layer consisting essentially of a high-melting point noble metal formed on said first electrode layer; a dielectic layer consisting essentially of an oxide ferroelectric material formed on said second electrode layer; and a third electrode layer formed on said dielectric layer.
Claim 3
Dependent Claim
22 words
A thin film capacitor as recited in Claim 1, wherein said silicon electrode is one of polycrystalline silicon and single crystal silicon.
Claim 4
Dependent Claim
33 words
A thin film capacitor as recited in Claim 1 or Claim 2, wherein said high-melting point noble metal is a member selected from the group consisting of platinum, palladium, rhodium and alloys thereof.
Claim 5
Dependent Claim
34 words
A thin film capacitor as recited in Claim 1, 2 or 3, wherein said oxide ferroelectric material is a member selected from the group consisting of perovskite type oxides, ilmenite type oxides and Bi₄Ti₃O₁₂.
Claim 6
Dependent Claim
31 words
A thin film capacitor as recited in Claim 1, wherein said oxide ferroelectic material is a member selected from the group consisting of BaTiO₃, SrTiO₃, PbTiO₃, PbZrO₃ and solid solutions thereof.
Claim 7
Independent Claim
107 words
A method of manufacturing thin film capacitors comprising the steps of: forming a first electrode layer consisting essentially of a member selected from the group consisting of (a) titanium, titanium silicide, titaniun nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybedenum silicide, tungsten silicide, alloys thereof and compounds thereof, and (b) rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, on a silicon electrode; forming a second electrode layer consisting essentially of high-melting point noble metal on said first electrode layer; forming a dielectric layer consisting essentially of an oxide ferroelectric material on said second electrode layer; and forming a third electrode layer on said dielectric layer.
Claim 8
Independent Claim
107 words
A method of manufacturing thin film capacitors comprising the steps of: forming a first electrode layer consisting essentially of a member selected from the group consisting of (a) titanium, titanium silicide, titaniun nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybedenum silicide, tungsten silicide, alloys thereof and compounds thereof, and (b) rhenium oxide, osmium oxide, rhodium oxide, iridium oxide and compounds thereof, on a silicon electrode; forming a second electrode layer consisting essentially of high-melting point noble metal on said first electrode layer; forming a dielectric layer consisting essentially of an oxide ferroelectric material on said second electrode layer; and forming a third electrode layer on said dielectric layer.
Claim 9
Dependent Claim
63 words
A method of manufacturing thin film capacitors as recited in Claim 6, comprising the steps of: forming a first electrode layer consisting essentially of a member selected from the group consisting of rhenium silicide, osmium silicide, rhodium silicide, iridium silicide and compounds thereof, on a silicon electrode; and oxidizing, then, said first electrode layer at temperatures in the range of 400 to 700°C
Claim 10
Dependent Claim
27 words
A method of manufacturing thin film capacitors as recited in Claim 6 or 7, wherein said silicon electrode is one of polycrystalline silicon and single crystal silicon.
Claim 11
Dependent Claim
36 words
A method of manufacturing thin film capacitors as recited in Claim 6, 7 or 8 wherein said high-melting point noble metal is a member selected from the group consisting of platinum, palladium, rhodium and alloys thereof.
Claim 12
Dependent Claim
38 words
A method of manufacturing thin film capacitors as recited in Claim 6, 7, 8 or 9 wherein said oxide ferroelectric material is a member selected from the group consisting of perovskite type oxides, ilmenite type oxides and Bi₄Ti₃O₁₂.
Claim 13
Dependent Claim
38 words
A method of manufacturing thin film capacitors as recited in Claim 6, 7, 8 or 9, wherein said oxide ferroelectric substance is a member selected from the group consisting of BaTiO₃, SrTiO₃, PbTiO₃, PbZrO₃ and solid solutions thereof.
References Cited (Backward Citations)
EP0157428A2
Cited
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