US5423285A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
Assignee: Symetrix Corp
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Filing: 1992-11-24
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Granted: 1995-06-13
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Expires: 2012-11-24
Abstract
Abstract A precursor comprising a metal 2-ethylhexanoate in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed. If the metal is titanium, the precursor comprises titanium 2-methoxyethoxide having at least a portion of its 2-methoxyethoxide ligands replaced by 2-ethylhexanoate. If the metal is a highly electropositive element, the solvent comprises 2-methoxyethanol. If the metal is lead, bismuth, thallium, or antimony, 1% to 75% excess metal is included in the precursor to account for evaporation of the oxide during baking and annealing.
Inventors
- 👤 Carlos A. Paz de Araujo
- 👤 Joseph D. Cuchiaro
- 👤 Michael C. Scott
- 👤 Larry D. McMillan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:23
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; B; B05; B05D; B05D1/00; B05D1/60; B05D3/00; B05D3/04; B05D3/0493; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/448; C23C16/4486; C23C16/455; C23C16/45561; C23C16/45563; C23C16/4558; C23C16/46; C23C16/48; C23C16/482; C23C16/52; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; C23C26/00; C23C26/02; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10B; H10B12/00; H10B12/30; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/076; H10N30/077; H10N30/078; H10P14/662; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H05; H05K; H05K3/00; H05K3/10; H05K3/105; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69398
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
98 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer and a precursor comprising a metal carboxylate in a solvent, said solvent having a boiling point between 110° C. and 170° C. and selected from the group comprising xylenes, 2-methoxyethanol, and n-butyl acetate; applying said precursor to said integrated circuit wafer; heating said integrated circuit wafer to form a layer of a chemical compound of said metal on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 2
Independent Claim
98 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer and a precursor comprising a metal carboxylate in a solvent, said solvent having a boiling point between 110° C. and 170° C. and selected from the group comprising xylenes, 2-methoxyethanol, and n-butyl acetate; applying said precursor to said integrated circuit wafer; heating said integrated circuit wafer to form a layer of a chemical compound of said metal on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 3
Dependent Claim
17 words
A method as in claim 1 wherein said metal carboxylate is a metal carboxylate having medium-length ligands.
Claim 4
Dependent Claim
14 words
A method as in claim 2 wherein said metal carboxylate is a metal 2-ethylhexanoate.
Claim 5
Dependent Claim
15 words
A method as in claim 1 wherein said chemical compound in a layered superlattice material.
Claim 6
Dependent Claim
11 words
A method as in claim 1 wherein said solvent comprises xylenes.
Claim 7
Dependent Claim
24 words
A method as in claim 1 wherein said step of heating includes a step of drying at a temperature of 200° C. or less.
Claim 8
Dependent Claim
25 words
A method as in claim 1 wherein said step of heating includes a step of baking at a temperature of between 200° C. and 600°.
Claim 9
Dependent Claim
25 words
A method as in claim 1 wherein said step of heating includes a step of annealing at a temperature of 500° C. to 850° C.
Claim 10
Dependent Claim
15 words
A method as in claim 8 wherein said step of annealing comprises rapid thermal annealing.
Claim 11
Dependent Claim
17 words
A method as in claim 8 wherein said step of annealing comprises annealing in a diffusion furnace.
Claim 12
Dependent Claim
29 words
A method as in claim 1 wherein said metal is a highly electropositive element and said precursor comprises a solvent selected from the group comprising 2-methoxyethanol and n-butyl acetate.
Claim 13
Dependent Claim
12 words
A method as in claim 1 wherein said solvent further comprises 1,4-dioxane.
Claim 14
Dependent Claim
40 words
A method as in claim 1 wherein said metal comprises one or more of the elements from the group comprising strontium, calcium, barium, bismuth, cadmium, lead, titanium, tantalum, hafnium, tungsten, niobium zirconium, bismuth, scandium, yttrium, lanthanum, antimony, chromium, and thallium.
Claim 15
Dependent Claim
20 words
A method as in claim 1 wherein said precursor comprises 1%-75% excess quantity of an element in said chemical compound.
Claim 16
Dependent Claim
20 words
A method as in claim 14 wherein said element is selected from the group comprising lead, bismuth, thallium, and antimony.
Claim 17
Independent Claim
68 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer and a precursor comprising titanium 2-methoxyethoxide; applying said precursor to said integrated circuit wafer; heating said integrated circuit wafer to form a layer of a titanium compound on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 18
Independent Claim
68 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer and a precursor comprising titanium 2-methoxyethoxide; applying said precursor to said integrated circuit wafer; heating said integrated circuit wafer to form a layer of a titanium compound on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 19
Dependent Claim
37 words
A method as in claim 16 and further comprising, prior to said step of applying, the step of reacting said titanium 2-methoxyethoxide with 2-ethylhexanoic acid, thereby replacing at least a portion of the 2-methoxyethoxide ligands by 2-ethylhexanoate.
Claim 20
Independent Claim
101 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer, a support, and a precursor comprising a metal carboxylate in a solvent, said solvent having a boiling point between 110° C. and 170° C. and selected from the group comprising xylenes, 2-methoxyethanol, and n-butyl acetate; applying said precursor to said support to form a sputtering target; sputtering said target to form a layer of a chemical compound of said metal on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 21
Independent Claim
101 words
A method of fabricating an integrated circuit comprising the steps of: providing an integrated circuit wafer, a support, and a precursor comprising a metal carboxylate in a solvent, said solvent having a boiling point between 110° C. and 170° C. and selected from the group comprising xylenes, 2-methoxyethanol, and n-butyl acetate; applying said precursor to said support to form a sputtering target; sputtering said target to form a layer of a chemical compound of said metal on said integrated circuit wafer; and completing the fabrication of said integrated circuit wafer to form a plurality of interconnected electrical devices on said wafer.
Claim 22
Dependent Claim
15 words
A method as in claim 18 wherein said chemical compounds is a layered superlattice material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-06-12 | 1998-12-12 | 1999-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-06-12 | 2002-12-12 | 2003-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-06-12 | 2006-12-12 | 2007-06-13 | $7700.00 | Window Closed / Lapsed |