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US5863619A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of and apparatus for coating photoresist film

Assignee: SK Hynix Inc
•
Filing: 1995-12-18
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Granted: 1999-01-26
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Expires: 2015-12-18
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Abstract

Abstract A method of and an apparatus for coating a photoresist film over a wafer, capable of eliminating local non-uniformity of the photoresist film and uniformly controlling the thickness of the photoresist film. The method includes the steps of vaporizing and injecting a liquid photoresist material to form photoresist particles, electrically charging photoresist particles, establishing an electric field in an area where the photoresist particles flow, thereby deflecting the photoresist particles, and selectively taking the photoresist particles passing through a desired zone, and depositing the selected photoresist particles over the wafer. The apparatus includes a Venturi tube for pumping up a liquid photoresist material and injecting the pumped photoresist material in a vapor phase, a first insulating tube adapted to disperse the photoresist particles formed upon injecting the liquid photoresist material, electrodes coupled to a voltage source and adapted to deflect the flow direction of the photoresist particles, a second insulating tube adapted to pass the photoresist particles deflected by the electrode therethrough, and a third insulating tube adapted to take only a portion of the photoresist particles emerging from the second insulating tube.

Inventors

  • 👤 Ik Boum Hur

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 01:41
CPC Classifications
B; B05; B05B; B05B5/00; B05B5/025; G; G03; G03F; G03F7/00; G03F7/16; G03F7/164

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 146 words
A method for coating a photoresist film on a wafer, comprising: providing a liquid photoresist; vaporizing the liquid photoresist so as to form photoresist particles that flow into an area; electrically charging the photoresist particles; establishing an electric field in the area in which the electrically-charged photoresist particles flow, so as to deflect the electrically-charged photoresist particles by differing respective amounts of deflection; passing toward the wafer through a zone, only a subset of the electrically-charged photoresist particles that are deflected by the electric field through the zone; depositing on the wafer, the electrically-charged photoresist particles that are deflected and pass through the zone, so as to coat the wafer with the photoresist film; and adjusting the zone to have a predetermined size and position so that only electrically-charged photoresist particles having a predetermined grain size pass through the zone to be deposited on the wafer.
Claim 2
Independent Claim 146 words
A method for coating a photoresist film on a wafer, comprising: providing a liquid photoresist; vaporizing the liquid photoresist so as to form photoresist particles that flow into an area; electrically charging the photoresist particles; establishing an electric field in the area in which the electrically-charged photoresist particles flow, so as to deflect the electrically-charged photoresist particles by differing respective amounts of deflection; passing toward the wafer through a zone, only a subset of the electrically-charged photoresist particles that are deflected by the electric field through the zone; depositing on the wafer, the electrically-charged photoresist particles that are deflected and pass through the zone, so as to coat the wafer with the photoresist film; and adjusting the zone to have a predetermined size and position so that only electrically-charged photoresist particles having a predetermined grain size pass through the zone to be deposited on the wafer.
Claim 3
Dependent Claim 17 words
The method of claim 1, wherein the vaporizing includes: passing the liquid photoresist through a Venturi tube.
Claim 4
Dependent Claim 26 words
The method of claim 1, further comprising: applying a voltage to the wafer to enhance a deposition rate of the electrically-charged photoresist particles on the wafer.

References Cited (Backward Citations)

US2967331A Cited
US4114564A Cited
US4170074A Cited
US4433003A Cited
US5340604A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-01-25 2002-07-27 2003-01-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-01-25 2006-07-27 2007-01-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-01-25 2010-07-27 2011-01-26 $7700.00 Window Closed / Lapsed

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