US5888583A
Expired / Lapsed
US
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Misted deposition method of fabricating integrated circuits
Assignee: Symetrix Corp
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Filing: 1995-01-23
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Granted: 1999-03-30
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Expires: 2015-01-23
Abstract
Abstract A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum deposition chamber, producing a mist of the precursor liquid, and flowing the mist into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried to form a thin film of a solid material on the substrate, then the integrated circuit is completed to include at least a portion of the film of solid material in a component of the integrated circuit.
Inventors
- 👤 Larry D. McMillan
- 👤 Carlos A. Paz de Araujo
- 👤 Tommy L. Roberts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:29
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; B; B05; B05D; B05D1/00; B05D1/60; B05D3/00; B05D3/04; B05D3/0493; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C23C16/44; C23C16/4412; C23C16/448; C23C16/4486; C23C16/455; C23C16/45561; C23C16/45563; C23C16/4558; C23C16/46; C23C16/48; C23C16/482; C23C16/52; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/125; C23C18/1287; C23C18/1295; C23C18/14; C23C18/143; C23C26/00; C23C26/02; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; H10B; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6538; H05; H05K; H05K3/00; H05K3/10; H05K3/105; H10P14/66; H10P14/668; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; Y; Y10; Y10S; Y10S427/00; Y10S427/101
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
121 words
A method of fabricating an integrated circuit comprising the steps of: (a) providing a liquid precursor comprising: a metal compound selected from the group consisting of metal alkoxides, metal carboxylates, and derivatives of metal alkoxides and metal carboxylates; and a solvent; (b) placing a substrate inside an enclosed deposition chamber; (c) producing a mist of said liquid precursor; (d) flowing said mist into said deposition chamber to form a film of precursor liquid on said substrate; (e) treating the precursor liquid to form a thin film of solid material on said substrate; and (f) continuing the fabrication of said integrated circuit to include at least a portion of said thin film of solid material in a component of said integrated circuit.
Claim 2
Independent Claim
121 words
A method of fabricating an integrated circuit comprising the steps of: (a) providing a liquid precursor comprising: a metal compound selected from the group consisting of metal alkoxides, metal carboxylates, and derivatives of metal alkoxides and metal carboxylates; and a solvent; (b) placing a substrate inside an enclosed deposition chamber; (c) producing a mist of said liquid precursor; (d) flowing said mist into said deposition chamber to form a film of precursor liquid on said substrate; (e) treating the precursor liquid to form a thin film of solid material on said substrate; and (f) continuing the fabrication of said integrated circuit to include at least a portion of said thin film of solid material in a component of said integrated circuit.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein said metal compound comprises a metal alkoxide.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said metal compound comprises a metal carboxylate.
Claim 5
Dependent Claim
10 words
The method of claim 1, wherein said solvent comprises 2-methoxyethanol.
Claim 6
Dependent Claim
10 words
The method of claim 1, wherein said solvent comprises methanol.
Claim 7
Dependent Claim
12 words
The method of claim 1, wherein said step of treating comprises drying.
Claim 8
Dependent Claim
23 words
The method of claim 6 wherein said step of drying comprises maintaining a sub-atmospheric pressure greater than 200 Torr in said deposition chamber.
Claim 9
Dependent Claim
19 words
The method of claim 6, wherein said step of treating further comprises heating said film which has been dried.
Claim 10
Dependent Claim
21 words
The method of claim 8, wherein said step of treating further comprises annealing said film which has been dried and heated.
Claim 11
Dependent Claim
26 words
The method of claim 1, wherein the step of flowing said mist into said deposition chamber is performed while maintaining a vacuum in the deposition chamber.
Claim 12
Dependent Claim
11 words
The method of claim 1, wherein said mist is an aerosol.
Claim 13
Dependent Claim
45 words
The method of claim 1, wherein a surface of said substrate defines a substrate plane, and said mist is flowed between said substrate and a barrier plate located within said deposition chamber in a spaced relation to said substrate and parallel to said substrate plane.
Claim 14
Dependent Claim
21 words
The method of claim 1, wherein said step of flowing is performed while maintaining said deposition chamber at substantially ambient temperature.
Claim 15
Independent Claim
111 words
A method of fabricating an integrated circuit comprising the steps of: (a) providing a liquid precursor comprising: a chemical compound including a metal-oxide bond; (b) placing a substrate inside an enclosed deposition chamber; (c) producing a mist of said liquid precursor; (d) injecting said mist into said deposition chamber to form a film of precursor liquid on said substrate; (e) treating the precursor liquid to form a thin film of solid material on said substrate, said solid material including said metal-oxide bond; and (f) continuing the fabrication of said integrated circuit to include at least a portion of said thin film of solid material in a component of said integrated circuit.
Claim 16
Independent Claim
111 words
A method of fabricating an integrated circuit comprising the steps of: (a) providing a liquid precursor comprising: a chemical compound including a metal-oxide bond; (b) placing a substrate inside an enclosed deposition chamber; (c) producing a mist of said liquid precursor; (d) injecting said mist into said deposition chamber to form a film of precursor liquid on said substrate; (e) treating the precursor liquid to form a thin film of solid material on said substrate, said solid material including said metal-oxide bond; and (f) continuing the fabrication of said integrated circuit to include at least a portion of said thin film of solid material in a component of said integrated circuit.
Claim 17
Dependent Claim
13 words
The method of claim 14, wherein said chemical compound comprises a metal alkoxide.
Claim 18
Dependent Claim
13 words
The method of claim 14, wherein said chemical compound comprises a metal carboxylate.
Claim 19
Dependent Claim
12 words
The method of claim 14 wherein said step of treating comprises drying.
Claim 20
Dependent Claim
18 words
The method of claim 14 wherein said step of treating comprises applying ultraviolet radiation to said precursor liquid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-03-29 | 2002-09-28 | 2003-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-29 | 2006-09-28 | 2007-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-29 | 2010-09-28 | 2011-03-30 | $7700.00 | Window Closed / Lapsed |