Patent US4153538A successfully refreshed from Google Patents.
Patent US5872385A successfully refreshed from Google Patents.
US5872385A
Expired / Lapsed
US
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Conductive interconnect structure and method of formation
Assignee: NXP USA Inc
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Filing: 1996-06-18
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Granted: 1999-02-16
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Expires: 2016-06-18
Abstract
Abstract In one embodiment, delamination of a patterned silicon nitride anti-reflective layer (26) from an underlying patterned tungsten silicide layer (32), is prevented by forming a thin silicon layer (30) between the patterned tungsten silicide layer (32) and the overlying patterned silicon nitride anti-reflective layer (26).
Inventors
- 👤 Robert C. Taft
- 👤 Craig D. Gunderson
- 👤 Arkalgud R. Sitaram
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/01326; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/71; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
97 words
A conductive interconnect structure in an integrated circuit comprising: a first patterned polysilicon layer; a patterned conductive metal layer overlying and self-aligned to the first patterned polysilicon layer, the patterned conductive metal layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer , the second patterned polysilicon layer having a thickness ranging from 5 to 100 nanometers; and a patterned anti-reflective insulating layer of silicon oxynitride overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective insulating layer abutting the second patterned polysilicon layer.
Claim 2
Dependent Claim
97 words
A conductive interconnect structure in an integrated circuit comprising: a first patterned polysilicon layer; a patterned conductive metal layer overlying and self-aligned to the first patterned polysilicon layer, the patterned conductive metal layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer , the second patterned polysilicon layer having a thickness ranging from 5 to 100 nanometers; and a patterned anti-reflective insulating layer of silicon oxynitride overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective insulating layer abutting the second patterned polysilicon layer.
Claim 3
Dependent Claim
32 words
The conductive interconnect structure of claim 1, further comprising a patterned oxide layer overlying and self-aligned to the first patterned polysilicon layer, the patterned oxide layer abutting the patterned anti-reflective insulating layer.
Claim 4
Dependent Claim
22 words
The conductive interconnect structure of claim 1, wherein the patterned conductive metal layer is further characterized as a patterned metal silicide layer.
Claim 5
Dependent Claim
19 words
The conductive interconnect structure of claim 3, wherein the patterned metal silicide layer is further characterized as tungsten silicide.
Claim 6
Dependent Claim
25 words
The conductive interconnect structure of claim 2, wherein the patterned oxide layer is further characterized as having a thickness ranging from 5 to 300 nanometers.
Claim 7
Dependent Claim
105 words
A conductive interconnect structure in an integrated circuit comprising: a first dielectric layer; a patterned conductive metal layer overlying the first dielectric layer; a patterned silicon layer overlying and self-aligned to the patterned conductive metal layer, the patterned silicon layer abutting the patterned conductive metal layer and having a thickness of about 30 nanometers; a patterned layer comprising silicon and nitrogen overlying and self-aligned to the patterned conductive metal layer, the patterned layer comprising silicon and nitrogen abutting the patterned silicon layer; and a second dielectric layer overlying the patterned conductive metal layer, the second dielectric layer abutting the patterned layer comprising silicon and nitrogen.
Claim 8
Dependent Claim
105 words
A conductive interconnect structure in an integrated circuit comprising: a first dielectric layer; a patterned conductive metal layer overlying the first dielectric layer; a patterned silicon layer overlying and self-aligned to the patterned conductive metal layer, the patterned silicon layer abutting the patterned conductive metal layer and having a thickness of about 30 nanometers; a patterned layer comprising silicon and nitrogen overlying and self-aligned to the patterned conductive metal layer, the patterned layer comprising silicon and nitrogen abutting the patterned silicon layer; and a second dielectric layer overlying the patterned conductive metal layer, the second dielectric layer abutting the patterned layer comprising silicon and nitrogen.
Claim 9
Dependent Claim
20 words
The conductive interconnect structure of claim 3, wherein the second dielectric layer is further characterized as a patterned oxide layer.
Claim 10
Dependent Claim
25 words
The conductive interconnect structure of claim 7, wherein the patterned oxide layer is further characterized as having a thickness ranging from 5 to 300 nanometers.
Claim 11
Dependent Claim
21 words
The conductive interconnect structure of claim 6, wherein the patterned conductive metal layer is further characterized as a patterned tungsten layer.
Claim 12
Dependent Claim
22 words
The conductive interconnect structure of claim 6, wherein the patterned conductive metal layer is further characterized as a patterned metal silicide layer.
Claim 13
Dependent Claim
22 words
The conductive interconnect structure of claim 10, wherein the patterned metal silicide layer is further characterized as a patterned tungsten silicide layer.
Claim 14
Dependent Claim
22 words
The conductive interconnect structure of claim 10, wherein the patterned metal silicide layer is further characterized as a patterned titanium silicide layer.
Claim 15
Dependent Claim
25 words
The conductive interconnect structure of claim 6, wherein the patterned layer comprising silicon and nitrogen is further characterized as a patterned layer of silicon nitride.
Claim 16
Dependent Claim
27 words
The conductive interconnect structure of claim 6, wherein the patterned layer comprising silicon and nitrogen is further characterized as a patterned layer of silicon rich silicon nitride.
Claim 17
Dependent Claim
25 words
The conductive interconnect structure of claim 6, wherein the patterned layer comprising silicon and nitrogen is further characterized as a patterned layer of silicon oxynitride.
Claim 18
Dependent Claim
28 words
The conductive interconnect structure of claim 6, wherein the patterned layer comprising silicon and nitrogen is further characterized as having a thickness ranging from 5 to 300 nanometers.
Claim 19
Dependent Claim
109 words
A conductive interconnect structure in an integrated circuit comprising: a gate dielectric layer; a first patterned polysilicon layer overlying the gate dielectric layer; a patterned metal silicide layer overlying and self-aligned to the first patterned polysilicon layer, the patterned metal silicide layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer, the second patterned polysilicon layer abutting the patterned metal silicide layer and having a thickness of about 30 nanometers; and a patterned anti-reflective layer comprising silicon and nitrogen overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective layer abutting the second patterned polysilicon layer.
Claim 20
Dependent Claim
109 words
A conductive interconnect structure in an integrated circuit comprising: a gate dielectric layer; a first patterned polysilicon layer overlying the gate dielectric layer; a patterned metal silicide layer overlying and self-aligned to the first patterned polysilicon layer, the patterned metal silicide layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer, the second patterned polysilicon layer abutting the patterned metal silicide layer and having a thickness of about 30 nanometers; and a patterned anti-reflective layer comprising silicon and nitrogen overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective layer abutting the second patterned polysilicon layer.
Claim 21
Dependent Claim
31 words
The conductive interconnect structure of claim 17, further comprising a patterned oxide layer overlying and self-aligned to the first patterned polysilicon layer, the patterned oxide layer abutting the patterned anti-reflective layer.
Claim 22
Dependent Claim
25 words
The conductive interconnect structure of claim 18, wherein the patterned oxide layer is further characterized as having a thickness ranging from 5 to 300 nanometers.
Claim 23
Dependent Claim
22 words
The conductive interconnect structure of claim 17, wherein the patterned metal silicide layer is further characterized as a patterned tungsten silicide layer.
Claim 24
Dependent Claim
22 words
The conductive interconnect structure of claim 17, wherein the patterned metal silicide layer is further characterized as a patterned titanium silicide layer.
Claim 25
Dependent Claim
22 words
The conductive interconnect structure of claim 17, wherein the patterned anti-reflective layer is further characterized as a patterned layer of silicon nitride.
Claim 26
Dependent Claim
24 words
The conductive interconnect structure of claim 17, wherein the patterned anti-reflective layer is further characterized as a patterned layer of silicon rich silicon nitride.
Claim 27
Dependent Claim
22 words
The conductive interconnect structure of claim 17, wherein the patterned anti-reflective layer is further characterized as a patterned layer of silicon oxynitride.
Claim 28
Dependent Claim
94 words
A conductive interconnect structure in an integrated circuit comprising: a first patterned polysilicon layer; a patterned conductive metal layer overlying and self-aligned to the first patterned polysilicon layer, the patterned conductive metal layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer, the second patterned polysilicon layer having a thickness ranging from 5 to 100 nanometers; and a patterned anti-reflective layer of silicon oxynitride overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective layer abutting the second patterned polysilicon layer.
Claim 29
Dependent Claim
94 words
A conductive interconnect structure in an integrated circuit comprising: a first patterned polysilicon layer; a patterned conductive metal layer overlying and self-aligned to the first patterned polysilicon layer, the patterned conductive metal layer abutting the first patterned polysilicon layer; a second patterned polysilicon layer overlying and self-aligned to the first patterned polysilicon layer, the second patterned polysilicon layer having a thickness ranging from 5 to 100 nanometers; and a patterned anti-reflective layer of silicon oxynitride overlying and self-aligned to the first patterned polysilicon layer, the patterned anti-reflective layer abutting the second patterned polysilicon layer.
Claim 30
Dependent Claim
31 words
The conductive interconnect structure of claim 25, further comprising a patterned oxide layer overlying and self-aligned to the first patterned polysilicon layer, the patterned oxide layer abutting the patterned anti-reflective layer.
Claim 31
Dependent Claim
22 words
The conductive interconnect structure of claim 25, wherein the patterned conductive metal layer is further characterized as a patterned metal silicide layer.
Claim 32
Dependent Claim
19 words
The conductive interconnect structure of claim 27, wherein the patterned metal silicide layer is further characterized as tungsten silicide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-02-15 | 2002-08-17 | 2003-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-02-15 | 2006-08-17 | 2007-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-02-15 | 2010-08-17 | 2011-02-16 | $7700.00 | Window Closed / Lapsed |