US5539249A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and structure for forming an integrated circuit pattern on a semiconductor substrate
Assignee: NXP USA Inc
•
Filing: 1994-09-20
•
Granted: 1996-07-23
•
Expires: 2014-09-20
Abstract
Abstract Reflective notching of a photoresist pattern (20), generated over reflective materials on a semiconductor substrate (12), is minimized by using an anti-reflective layer (20) of silicon-rich silicon nitride. The layer of silicon-rich silicon nitride is formed over the reflective materials and a layer of photoresist is then formed over the silicon-rich silicon nitride. The photoresist layer is then photolithographically patterned to form an integrated circuit pattern (20). The silicon-rich silicon nitride layer has an absorptive index of greater than 0.25, which allows it to be used as an anti-reflective layer with photolithographic patterning systems having ultraviolet and deep ultraviolet exposure wavelengths.
Inventors
- 👤 Bernard J. Roman
- 👤 Bich-Yen Nguyen
- 👤 Chandrasekaram Ramiah
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 11:33
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/7055; G03F7/70583; G03F7/004; G03F7/09; G03F7/091; G03F7/70425; G03F7/70433; G03F7/70441; G03F7/70691; H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; H10P76/2043; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
69 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a conductive layer overlying the semiconductor substrate; an insulating layer overlying the conductive layer; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the insulating layer, the anti-reflective layer having an absorptive index of greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers; and a photoresist layer overlying the anti-reflective layer.
Claim 2
Independent Claim
69 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a conductive layer overlying the semiconductor substrate; an insulating layer overlying the conductive layer; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the insulating layer, the anti-reflective layer having an absorptive index of greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers; and a photoresist layer overlying the anti-reflective layer.
Claim 3
Dependent Claim
20 words
The device structure of claim 1, wherein the insulating layer is further characterized as a layer of thermal silicon dioxide.
Claim 4
Dependent Claim
24 words
The device structure of claim 1, wherein the conductive layer comprises a material selected from the group consisting of polysilicon, tungsten, titanium, and cobalt.
Claim 5
Dependent Claim
27 words
The device structure of claim 1, wherein the absorptive index of the anti-reflective layer is greater than 0.25 at electromagnetic radiation wavelengths of less than 440 nanometers.
Claim 6
Dependent Claim
20 words
The device structure of claim 1 further comprising: an insulating layer overlying the anti-reflective layer and underlying the photoresist layer.
Claim 7
Dependent Claim
18 words
The device structure of claim 1, wherein the conductive layer comprises a silicide layer overlying a polysilicon layer.
Claim 8
Dependent Claim
17 words
The device structure of claim 1, wherein the conductive layer is further characterized as a polysilicon layer.
Claim 9
Dependent Claim
15 words
The device structure of claim 1 further comprising: a dielectric layer underlying the conductive layer.
Claim 10
Dependent Claim
19 words
The device structure of claim 8, wherein the dielectric layer is further characterized a layer of thermal silicon dioxide.
Claim 11
Independent Claim
80 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a device layer overlying the semiconductor substrate; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the device layer, wherein the anti-reflective layer has an absorptive index which is greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers, the anti-reflective layer having a thickness ranging from greater than 5 nanometers to approximately 50 nanometers; and a photoresist layer overlying the anti-reflective layer.
Claim 12
Independent Claim
80 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a device layer overlying the semiconductor substrate; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the device layer, wherein the anti-reflective layer has an absorptive index which is greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers, the anti-reflective layer having a thickness ranging from greater than 5 nanometers to approximately 50 nanometers; and a photoresist layer overlying the anti-reflective layer.
Claim 13
Dependent Claim
14 words
The device structure of claim 10, wherein the device layer is a conductive layer.
Claim 14
Dependent Claim
24 words
The device structure of claim 11, wherein the conductive layer comprises a material selected from the group consisting of polysilicon, tungsten, titanium, and cobalt.
Claim 15
Dependent Claim
18 words
The device structure of claim 11, wherein the conductive layer comprises a silicide layer overlying a polysilicon layer.
Claim 16
Dependent Claim
17 words
The device structure of claim 11, wherein the conductive layer is further characterized as a polysilicon layer.
Claim 17
Dependent Claim
28 words
The device structure of claim 10, wherein the anti-reflective layer has an absorptive index which is greater than 0.25 at electromagnetic radiation wavelengths of less than 440 nanometers.
Claim 18
Dependent Claim
21 words
The device structure of claim 10, wherein the anti-reflective layer is further characterized as having a thickness of approximately 25 nanometers.
Claim 19
Dependent Claim
18 words
The device structure of claim 11 further comprising: a layer of thermal silicon dioxide underlying the conductive layer.
Claim 20
Independent Claim
71 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a conductive layer overlying the semiconductor substrate; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the conductive layer, wherein the anti-reflective layer has an absorptive index which is greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers; an insulating layer overlying the anti-reflective layer; and a photoresist layer overlying the insulating layer.
Claim 21
Independent Claim
71 words
A device structure useful for making an integrated circuit, comprising: a semiconductor substrate; a conductive layer overlying the semiconductor substrate; an anti-reflective layer of non plasma assisted silicon-rich silicon nitride overlying the conductive layer, wherein the anti-reflective layer has an absorptive index which is greater than 0.05 at electromagnetic radiation wavelengths of less than 440 nanometers; an insulating layer overlying the anti-reflective layer; and a photoresist layer overlying the insulating layer.
Claim 22
Dependent Claim
24 words
The device structure of claim 18, wherein the conductive layer comprises a material selected from the group consisting of polysilicon, tungsten, titanium, and cobalt.
Claim 23
Dependent Claim
18 words
The device structure of claim 18, wherein the conductive layer comprises a silicide layer overlying a polysilicon layer.
Claim 24
Dependent Claim
17 words
The device structure of claim 18, wherein the conductive layer is further characterized as a polysilicon layer.
Claim 25
Dependent Claim
18 words
The device structure of claim 18, wherein the insulating layer is further characterized as a silicon dioxide layer.
Claim 26
Dependent Claim
21 words
The device structure of claim 18, wherein the anti-reflective layer is further characterized as having a thickness of approximately 50 nanometers.
Claim 27
Dependent Claim
28 words
The device structure of claim 18, wherein the anti-reflective layer has an absorptive index which is greater than 0.25 at electromagnetic radiation wavelengths of less than 440 nanometers.
Claim 28
Dependent Claim
18 words
The device structure of claim 18, further comprising: a layer of thermal silicon dioxide underlying the conductive layer.
References Cited (Backward Citations)
DE3234066A1
Cited
US4714668A
Cited
JPS61290721A
Cited
US5072275A
Cited
EP0379604A1
Cited
US5066615A
Cited
US5126289A
Cited
US5135877A
Cited
US5332924A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-23 | 2000-01-22 | 2000-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-23 | 2004-01-22 | 2004-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-23 | 2008-01-22 | 2008-07-23 | $7700.00 | Window Closed / Lapsed |