US4714668A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for patterning layer having high reflectance using photosensitive material
Assignee: Toshiba Corp
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Filing: 1986-06-24
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Granted: 1987-12-22
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Expires: 2006-06-24
Abstract
Abstract A method for patterning a layer having a high reflectance includes directly forming on a layer having a high reflectance a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30% and forming a photosensitive material film on the light-absorbing film. A selected region of the photosensitive material film is irradiated with the exposing incident light, and the photosensitive material film is developed to form a first pattern. The light-absorbing film is selectively etched using the first pattern as a mask so as to form a second pattern. Finally, the layer having the high reflectance is selectively etched using the second pattern as a mask.
Inventors
- 👤 Tsunehisa Uneno
- 👤 Yutaka Kamata
- 👤 Sinji Miyazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 03:01
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2041; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P76/2043; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/952
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
185 words
A method for patterning a layer having high reflectance, which is defined as 90% or greater, comprising the steps of: providing a semi-conductor substrate for support of said layer, wherein said layer is conductive and includes an inclined surface portion; directly forming on said layer a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30%; said film covering the inclined surface portion of said layer, said film comprising at least one light absorbing material selected from a group consisting of silicon oxide and aluminum oxide, said silicon oxide and aluminum oxide having nonstoichiometric compositions, said light absorbing material being formed by plasma CVD, photo-CVD or ion plating; forming a photosensitive material film on said light-absorbing film; irradiating a selected region of said photosensitive material film with the exposing incident light; developing said photosensitive material film to form a first pattern; selectively etching said light-absorbing film using said first pattern as a mask so as to form a second pattern; and selectively etching said layer having the high reflectance using said second pattern as a mask.
Claim 2
Independent Claim
185 words
A method for patterning a layer having high reflectance, which is defined as 90% or greater, comprising the steps of: providing a semi-conductor substrate for support of said layer, wherein said layer is conductive and includes an inclined surface portion; directly forming on said layer a light-absorbing film having a ratio of transmitted light intensity to exposing incident light intensity of not more than 30%; said film covering the inclined surface portion of said layer, said film comprising at least one light absorbing material selected from a group consisting of silicon oxide and aluminum oxide, said silicon oxide and aluminum oxide having nonstoichiometric compositions, said light absorbing material being formed by plasma CVD, photo-CVD or ion plating; forming a photosensitive material film on said light-absorbing film; irradiating a selected region of said photosensitive material film with the exposing incident light; developing said photosensitive material film to form a first pattern; selectively etching said light-absorbing film using said first pattern as a mask so as to form a second pattern; and selectively etching said layer having the high reflectance using said second pattern as a mask.
Claim 3
Dependent Claim
45 words
A method according to claim 1, wherein said light-absorbing material is formed by plasma CVD in which a degree of vacuum of an atmosphere including raw materials is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 4
Dependent Claim
45 words
A method according to claim 1, wherein said light-absorbing material is formed by plasma CVD in which a flow rate of nitrogen gas as a carrier gas is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 5
Dependent Claim
38 words
A method according to claim 1, wherein said light-absorbing material is formed by plasma CVD in which a high-frequency power is controlled so as to establish said ratio of the transmitted light intensity to the incident light intensity.
Claim 6
Dependent Claim
14 words
A method according to claim 1, wherein said photosensitive material is a negative-working photoresist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-12-21 | 1991-06-22 | 1991-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-12-21 | 1995-06-22 | 1995-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-12-21 | 1999-06-22 | 1999-12-22 | $7700.00 | Window Closed / Lapsed |