← Back to Patent Explorer
US5264076A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated circuit process using a "hard mask"

Assignee: Nokia Bell Labs
•
Filing: 1992-12-17
•
Granted: 1993-11-23
•
Expires: 2012-12-17
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A layer of spin-on-glass is used as a hard mask for patterning an underlying layer of polysilicon. The patterned polysilicon may be used in the gate structures of field effect transistors.

Inventors

  • 👤 John D. Cuthbert
  • 👤 David P. Favreau

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 07:00
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/71

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 79 words
A method of integrated circuit fabrication comprising the steps of: forming features on a substrate, said features having topography; forming a layer of material covering said features; forming a layer of nonconformal material on said layer of material; forming a layer of resist on said layer of nonconformal material; patterning said resist and said layer of nonconformal material; removing said layer of resist; and patterning said layer of material using said layer of nonconformal material as an etch mask.
Claim 2
Independent Claim 79 words
A method of integrated circuit fabrication comprising the steps of: forming features on a substrate, said features having topography; forming a layer of material covering said features; forming a layer of nonconformal material on said layer of material; forming a layer of resist on said layer of nonconformal material; patterning said resist and said layer of nonconformal material; removing said layer of resist; and patterning said layer of material using said layer of nonconformal material as an etch mask.
Claim 3
Dependent Claim 15 words
A method as recited in claim 1 in which said layer of material comprises polysilicon.
Claim 4
Dependent Claim 17 words
A method as recited in claim 1 in which said layer of nonconformal material comprises a spin-on-glass.
Claim 5
Dependent Claim 17 words
A method as recited in claim 3 further comprising the step of removing said layer of spin-on-glass.
Claim 6
Dependent Claim 19 words
A method as recited in claim 4 in which said removing step comprises using a solution comprising HF acid.

References Cited (Backward Citations)

US4244799A Cited
US4521274A Cited
US4683024A Cited
US4935095A Cited
US5100503A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-11-22 1997-05-24 1997-11-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-11-22 2001-05-24 2001-11-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-11-22 2005-05-24 2005-11-23 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag