US4476483A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a doped amorphous silicon adhesive layer
Assignee: US Philips Corp
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Filing: 1981-07-09
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Granted: 1984-10-09
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Expires: 2001-07-09
Abstract
Abstract The invention relates to a semiconductor device having a disk-shaped semiconductor body in which on the side of a first major surface at least one circuit element is formed and in which a second major surface present opposite to the first major surface is covered with an adhesive layer on which at least one metal layer is provided, which metal layer is bonded to a carrier. According to the invention, the adhesive layer is formed of doped amorphous silicon of the same conductivity type as the semiconductor body on the side of the second major surface.
Inventors
- 👤 Everhardus P. G. T. van de Ven
- 👤 Antonius J. M. Uijen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:32
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/20; H10W70/24; H10W70/26; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W72/00; H10W72/071; H10W72/073
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
87 words
A semiconductor device having a monocrystalline semiconductor body with first and second oppositely-located major surfaces, which comprises: at least one circuit element formed in said first major surface; a doped amorphous silicon adhesive layer on said second major surface and of the same conductivity type at that of said monocrystalline semiconductor body at said second major surface; at least one metal layer on said doped amorphous silicon adhesive layer; and a carrier bonded to the outermost of said metal layer(s) on the doped amorphous silicon adhesive layer.
Claim 2
Dependent Claim
87 words
A semiconductor device having a monocrystalline semiconductor body with first and second oppositely-located major surfaces, which comprises: at least one circuit element formed in said first major surface; a doped amorphous silicon adhesive layer on said second major surface and of the same conductivity type at that of said monocrystalline semiconductor body at said second major surface; at least one metal layer on said doped amorphous silicon adhesive layer; and a carrier bonded to the outermost of said metal layer(s) on the doped amorphous silicon adhesive layer.
Claim 3
Dependent Claim
14 words
A semiconductor device as claimed in claim 1, wherein said metal layer comprises solder.
Claim 4
Dependent Claim
46 words
A semiconductor device as claimed in claim 1 or 2, wherein the concentration of dopant determining the conductivity type of said doped amorphous silicon adhesive layer is larger than the concentration of dopant determining the conductivity type of said semiconductor body at its second major surface.
Claim 5
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein metal layers of palladium and then silver are provided on said doped amorphous silicon adhesive layer.
Claim 6
Dependent Claim
25 words
A semiconductor device as claimed in claim 1, wherein metal layers of nickel and then gold are provided on said doped amorphous silicon adhesive layer.
References Cited (Backward Citations)
US4251287A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-10-09 | 1988-04-09 | 1988-10-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-10-09 | 1992-04-09 | 1992-10-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-10-09 | 1996-04-09 | 1996-10-09 | $7700.00 | Window Closed / Lapsed |