Patent US5821150A successfully refreshed from Google Patents.
US5821150A
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US
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Method of forming a resistor and integrated circuitry having a resistor construction
Assignee: Micron Technology Inc
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Filing: 1997-10-20
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Granted: 1998-10-13
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Expires: 2017-10-20
Abstract
Abstract A method of forming a resistor from semiconductive material includes, a) providing a substrate; b) providing a layer of semiconductive material over the substrate; c) providing a pair of openings into the semiconductive material layer; d) plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive pillars within the semiconductive material, the pair of pillars having semiconductive material extending therebetween to provide a resistor construction; and e) providing a conductive node to each of the electrically conductive pillars. An integrated circuit incorporating a resistor construction includes, i) a layer of semiconductive material; ii) a pair of electrically conductive pillars provided within the semiconductive material layer, the pair of pillars being separated from one another and thereby having a mass of the semiconductive material extending therebetween; and iii) an electrically conductive node in electrical connection with each of the respective conductive pillars. Alternately, a resistor is provided within a semiconductive substrate using different concentration diffusion regions.
Inventors
- 👤 Kirk Prall
- 👤 Pierre C. Fazan
- 👤 Aftab Ahmad
- 👤 Howard E. Rhodes
- 👤 Werner Juengling
- 👤 Pai-Hung Pan
- 👤 Tyler Lowrey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:07
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D84/00; H10D84/201; H10D84/204; H10D84/209; H10D84/80; H10D84/811; H10D84/817; Y; Y10; Y10S; Y10S148/00; Y10S148/136
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
83 words
A method of forming a resistor atop a substrate comprising the following steps: forming a layer of semiconductive material over the substrate; forming a pair of openings into the semiconductive material layer; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material, the pair of resistor electrodes having semiconductive material extending therebetween to provide a resistor construction; and forming a conductive node to each of the electrically conductive resistor electrodes.
Claim 2
Independent Claim
83 words
A method of forming a resistor atop a substrate comprising the following steps: forming a layer of semiconductive material over the substrate; forming a pair of openings into the semiconductive material layer; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material, the pair of resistor electrodes having semiconductive material extending therebetween to provide a resistor construction; and forming a conductive node to each of the electrically conductive resistor electrodes.
Claim 3
Dependent Claim
63 words
The method of forming a resistor of claim 1 wherein the layer of semiconductive material is formed to have an upper surface, the plugging step comprising depositing the electrically conductive material over the semiconductive material layer and etching back the electrically conductive material to define the resistor electrodes, the electrodes having an upper surface which is elevationally coincident with the semiconductive material layer.
Claim 4
Dependent Claim
32 words
The method of forming a resistor of claim 1 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 .
Claim 5
Dependent Claim
31 words
The method of forming a resistor of claim 1 wherein the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
Claim 6
Dependent Claim
17 words
The method of forming a resistor of claim 1 wherein the electrically conductive plugging material comprises tungsten.
Claim 7
Dependent Claim
54 words
The method of forming a resistor of claim 1 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 , and the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
Claim 8
Independent Claim
94 words
A method of forming a resistor atop a substrate comprising the following steps: forming a layer of semiconductive material over the substrate; forming a pair of openings into the semiconductive material layer; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material; forming a conductive node to each of the resistor electrodes; and patterning the semiconductive material layer into a desired resistor shape, the shape comprising the pair of resistor electrodes having semiconductive material of the semiconductive material layer extending therebetween.
Claim 9
Independent Claim
94 words
A method of forming a resistor atop a substrate comprising the following steps: forming a layer of semiconductive material over the substrate; forming a pair of openings into the semiconductive material layer; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material; forming a conductive node to each of the resistor electrodes; and patterning the semiconductive material layer into a desired resistor shape, the shape comprising the pair of resistor electrodes having semiconductive material of the semiconductive material layer extending therebetween.
Claim 10
Dependent Claim
63 words
The method of forming a resistor of claim 7 wherein the layer of semiconductive material is formed to have an upper surface, the plugging step comprising depositing the electrically conductive material over the semiconductive material layer and etching back the electrically conductive material to define the resistor electrodes, the electrodes having an upper surface which is elevationally coincident with the semiconductive material layer.
Claim 11
Dependent Claim
32 words
The method of forming a resistor of claim 7 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 .
Claim 12
Dependent Claim
31 words
The method of forming a resistor of claim 7 wherein the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
Claim 13
Dependent Claim
17 words
The method of forming a resistor of claim 7 wherein the electrically conductive plugging material comprises tungsten.
Claim 14
Dependent Claim
54 words
The method of forming a resistor of claim 7 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 , and the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
Claim 15
Independent Claim
111 words
A method of forming a resistor atop a semiconductive substrate comprising the following steps: forming a layer of semiconductive material over the semiconductive substrate; forming a pair of openings into the semiconductive material layer to the substrate, the openings defining respective opening bases where the openings meet the semiconductive substrate; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material; forming a conductive node within the semiconductive substrate at the base of each opening; and patterning the semiconductive material layer into a desired resistor shape, the shape comprising the pair of resistor electrodes having semiconductive material extending therebetween.
Claim 16
Independent Claim
111 words
A method of forming a resistor atop a semiconductive substrate comprising the following steps: forming a layer of semiconductive material over the semiconductive substrate; forming a pair of openings into the semiconductive material layer to the substrate, the openings defining respective opening bases where the openings meet the semiconductive substrate; plugging the pair of openings with an electrically conductive material to define a pair of electrically conductive resistor electrodes within the semiconductive material; forming a conductive node within the semiconductive substrate at the base of each opening; and patterning the semiconductive material layer into a desired resistor shape, the shape comprising the pair of resistor electrodes having semiconductive material extending therebetween.
Claim 17
Dependent Claim
63 words
The method of forming a resistor of claim 13 wherein the layer of semiconductive material is formed to have an upper surface, the plugging step comprising depositing the electrically conductive material over the semiconductive material layer and etching back the electrically conductive material to define the resistor electrodes, the electrodes having an upper surface which is elevationally coincident with the semiconductive material layer.
Claim 18
Dependent Claim
51 words
The method of forming a resistor of claim 13 wherein the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 19 ions/cm 3 , and the substrate node is substantially provided by out-diffusion of the conductivity enhancing dopant impurity from the polysilicon plugging material.
Claim 19
Dependent Claim
34 words
The method of forming a resistor of claim 13 wherein the substrate node is substantially provided by a conductivity enhancing doping into the substrate through the pair of openings prior to the plugging step.
Claim 20
Dependent Claim
32 words
The method of forming a resistor of claim 13 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 .
Claim 21
Dependent Claim
31 words
The method of forming a resistor of claim 13 wherein the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
Claim 22
Dependent Claim
17 words
The method of forming a resistor of claim 13 wherein the electrically conductive lugging material comprises tungsten.
Claim 23
Dependent Claim
54 words
The method of forming a resistor of claim 13 wherein the semiconductive material is silicon having a conductivity enhancing dopant concentration of less than or equal to 1×10 19 ions/cm 3 , and the electrically conductive plugging material comprises polysilicon having a conductivity enhancing dopant concentration of at least 1×10 20 ions/cm 3 .
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-10-12 | 2002-04-13 | 2002-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-10-12 | 2006-04-13 | 2006-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-10-12 | 2010-04-13 | 2010-10-13 | $7700.00 | Window Closed / Lapsed |