US5235312A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polysilicon resistors and methods of fabrication
Assignee: Micron Technology Inc
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Filing: 1991-11-18
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Granted: 1993-08-10
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Expires: 2011-11-18
Abstract
Abstract A semiconductor processing method of forming a resistor device includes, a) providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; b) oxidizing the polysilicon layer at a temperature from about 850° C. to about 1050° C. for a selected period of time to form SiO x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and c) patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.
Inventors
- 👤 Gurtej Sandhu
- 👤 Pierre C. Fazan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 22:22
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
118 words
A semiconductor processing method of forming a resistor device comprising: providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; oxidizing the polysilicon layer at a temperature from about 850° C. to about 1050° C. for a selected period of time to form SiO x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.
Claim 2
Dependent Claim
118 words
A semiconductor processing method of forming a resistor device comprising: providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; oxidizing the polysilicon layer at a temperature from about 850° C. to about 1050° C. for a selected period of time to form SiO x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.
Claim 3
Dependent Claim
24 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 500 Angstroms to about 4000 Angstroms.
Claim 4
Dependent Claim
24 words
The semiconductor processing method of forming a resistor of claim 2 wherein the selected thickness is from about 1000 Angstroms to about 2000 Angstroms.
Claim 5
Dependent Claim
31 words
The semiconductor processing method of forming a resistor of claim 1 wherein the step of oxidizing is conducted by a wet oxidation at from about 850° C. to about 950° C.
Claim 6
Dependent Claim
26 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected period of time is from about 15 minutes to about 45 minutes.
Claim 7
Dependent Claim
46 words
The semiconductor processing method of forming a resistor of claim 1 wherein the step of oxidizing is conducted by a wet oxidation at from about 850° C. to about 950° C., and the selected period of time is from about 15 minutes to about 45 minutes.
Claim 8
Dependent Claim
44 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 500 Angstroms to about 4000 Angstroms, and the step of oxidizing is conducted by a wet oxidation at from about 850° C. to about 950° C.
Claim 9
Dependent Claim
39 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 500 Angstroms to about 4000 Angstroms, and the selected period of time is from about 15 minutes to about 45 minutes.
Claim 10
Dependent Claim
58 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 500 Angstroms to about 4000 Angstroms, the step of oxidizing is conducted by a wet oxidation at from about 850° C. to about 950° C., and the selected period of time is from about 15 minutes to about 45 minutes.
Claim 11
Dependent Claim
39 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 1000 Angstroms to about 2000 Angstroms, and the selected period of time is from about 15 minutes to about 45 minutes.
Claim 12
Dependent Claim
44 words
The semiconductor processing method of forming a resistor of claim 1 wherein the selected thickness is from about 1000 Angstroms to about 2000 Angstroms, and the step of oxidizing is conducted by a wet oxidation at from about 850° C. to about 950° C.
Claim 13
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 1.
Claim 14
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 2.
Claim 15
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 3.
Claim 16
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 4.
Claim 17
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 5.
Claim 18
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 7.
Claim 19
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 8.
Claim 20
Dependent Claim
16 words
An integrated circuit incorporating the resistor device produced by the semiconductor processing method of claim 9.
Claim 21
Dependent Claim
89 words
A resistor device within a semiconductor integrated circuit comprising: a region of conductively doped polysilicon grains provided atop a substrate, the polysilicon grains having side, top and base portions, the base portions contacting the substrate; and SiO x provided within the region about the sides and top of individual polysilicon grains, the SiO x extending between individual grains down to the substrate atop which the polysilicon grains are provided and separating individual grains thereby increasing the resistance of the conductively doped polysilicon than were such SiO x not present.
Claim 22
Dependent Claim
89 words
A resistor device within a semiconductor integrated circuit comprising: a region of conductively doped polysilicon grains provided atop a substrate, the polysilicon grains having side, top and base portions, the base portions contacting the substrate; and SiO x provided within the region about the sides and top of individual polysilicon grains, the SiO x extending between individual grains down to the substrate atop which the polysilicon grains are provided and separating individual grains thereby increasing the resistance of the conductively doped polysilicon than were such SiO x not present.
References Cited (Backward Citations)
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