US5485138A
Expired / Lapsed
US
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Thin film resistor and method for manufacturing the same
Assignee: Texas Instruments Inc
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Filing: 1994-06-09
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Granted: 1996-01-16
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Expires: 2014-06-09
Abstract
Abstract An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO2 32), an interlevel dielectric layer (e.g. SiO2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portions of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques.
Inventors
- 👤 Frank J. Morris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; H01; H01C; H01C1/00; H01C1/14
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
94 words
A method of fabricating a microelectronic inverted thin film resistor structure, said method comprising: (a) forming a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads, on a supporting layer; (b) forming an interlevel dielectric layer on said metallic interconnect layer and said supporting layer; (c) planarizing said interlevel dielectric layer so as to expose a top contact portion of said metallic interconnect leads; and (d) forming an inverted thin film resistor on said planarized interlevel dielectric layer and on said exposed top contact portion of said metallic interconnect leads.
Claim 2
Independent Claim
94 words
A method of fabricating a microelectronic inverted thin film resistor structure, said method comprising: (a) forming a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads, on a supporting layer; (b) forming an interlevel dielectric layer on said metallic interconnect layer and said supporting layer; (c) planarizing said interlevel dielectric layer so as to expose a top contact portion of said metallic interconnect leads; and (d) forming an inverted thin film resistor on said planarized interlevel dielectric layer and on said exposed top contact portion of said metallic interconnect leads.
Claim 3
Dependent Claim
26 words
The method according to claim 1, said method further comprising forming an upper level dielectric layer on and substantially covering said inverted thin film resistor structure.
Claim 4
Dependent Claim
36 words
The method according to claim 1, wherein said inverted thin film resistor formation comprises the steps of: (a) depositing a resistive layer; and (b) photolithographically defining and etching a predetermined resistor pattern in said resistive layer.
Claim 5
Dependent Claim
26 words
The method according to claim 1, wherein said resistor has a length defined by a predetermined spacing between said top contact portion of said interconnect leads.
Claim 6
Dependent Claim
16 words
The method according to claim 1, wherein said supporting layer is a lower level dielectric layer.
Claim 7
Dependent Claim
14 words
The method according to claim 1, wherein said supporting layer is a semiconductor substrate.
Claim 8
Dependent Claim
28 words
The method according to claim 1, wherein said metallic interconnect layer is selected from the group consisting of: Al, Au, Cu, Ti, W, AlCu, TiW/Au, and combinations thereof.
Claim 9
Dependent Claim
26 words
The method according to claim 1, wherein said inverted thin film resistor is selected from the group consisting of: TaN, Cermet, TiN, TiW, and combinations thereof.
Claim 10
Dependent Claim
29 words
The method according to claim 1, wherein said interlevel dielectric layer is selected from the group consisting of: SiO 2 , Si 3 N 4 , and combinations thereof.
Claim 11
Dependent Claim
73 words
A microelectronic inverted thin film resistor structure comprising: a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads overlaying a supporting layer; a substantially planar interlevel dielectric layer overlaying said supporting layer, wherein an exposed portion of said leads extends above said dielectric layer; and an inverted thin film resistor overlaying a portion of said planar interlevel dielectric layer and overlaying said exposed portion of said metallic interconnect leads.
Claim 12
Dependent Claim
73 words
A microelectronic inverted thin film resistor structure comprising: a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads overlaying a supporting layer; a substantially planar interlevel dielectric layer overlaying said supporting layer, wherein an exposed portion of said leads extends above said dielectric layer; and an inverted thin film resistor overlaying a portion of said planar interlevel dielectric layer and overlaying said exposed portion of said metallic interconnect leads.
Claim 13
Dependent Claim
24 words
The structure of claim 10, said structure further comprising an upper level dielectric layer on and substantially covering said inverted thin film resistor structure.
Claim 14
Dependent Claim
24 words
The structure of claim 10, wherein said resistor has a length defined by a predetermined spacing between said exposed portion of said interconnect leads.
Claim 15
Dependent Claim
15 words
The structure of claim 10, wherein said supporting layer is a lower level dielectric layer.
Claim 16
Dependent Claim
13 words
The structure of claim 10, wherein said supporting layer is a semiconductor substrate.
Claim 17
Dependent Claim
27 words
The structure of claim 10, wherein said metallic interconnect layer is selected from the group consisting of: Al, Au, Cu, Ti, W, AlCu, TiW/Au, and combinations thereof.
Claim 18
Dependent Claim
25 words
The structure of claim 10, wherein said inverted thin film resistor is selected from the group consisting of: TaN, Cermet, TiN, TiW, and combinations thereof.
Claim 19
Dependent Claim
28 words
The structure of claim 10, wherein said interlevel dielectric layer is selected from the group consisting of: SiO 2 , Si 3 N 4 , and combinations thereof.
References Cited (Backward Citations)
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