US5244835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making contact electrodes of polysilicon in semiconductor device
Assignee: Toshiba Corp
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Filing: 1991-10-11
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Granted: 1993-09-14
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Expires: 2011-10-11
Abstract
Abstract For providing different conductivity type contact electrodes being in contact with different conductivity type semiconductor regions formed in a semiconductor substrate, after an insulating film is formed on the semiconductor substrate, it is selectively etched down to one conductivity type semiconductor region to provide a first contact hole therein. One conductivity type doped polysilicon layer is deposited over the substrate surface to fill the first contact hole therewith. Thereafter, the one conductivity type doped polysilicon layer and the insulating film are selectively removed down to an opposite conductivity type semiconductor region to provide a second contact hole therein. An opposite conductivity type doped polysilicon layer is deposited over the substrate surface to fill the second contact hole therewith. These polysilicon layers are then removed from the surface of the insulating film to provide first and second contact electrodes in the contact holes.
Inventors
- 👤 Takayo Hachiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 22:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
157 words
A method of making a semiconductor device comprising the steps of: preparing a semiconductor substrate including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type; forming an insulating film on said semiconductor substrate; selectively removing said insulating film down to said first semiconductor region to provide a first contact hole therein; depositing a first polysilicon layer of said first conductivity type over said insulating film to fill said first contact hole therewith; selectively removing said first polysilicon layer and said insulating film down to said second semiconductor region to provide a second contact hole therein; depositing a second polysilicon layer of said second conductivity type over said first polysilicon layer to fill said second contact hole therewith; and removing said first and second polysilicon layers from a surface of said insulating film to provide first and second contact fills in said first and second contact holes, respectively.
Claim 2
Independent Claim
157 words
A method of making a semiconductor device comprising the steps of: preparing a semiconductor substrate including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type; forming an insulating film on said semiconductor substrate; selectively removing said insulating film down to said first semiconductor region to provide a first contact hole therein; depositing a first polysilicon layer of said first conductivity type over said insulating film to fill said first contact hole therewith; selectively removing said first polysilicon layer and said insulating film down to said second semiconductor region to provide a second contact hole therein; depositing a second polysilicon layer of said second conductivity type over said first polysilicon layer to fill said second contact hole therewith; and removing said first and second polysilicon layers from a surface of said insulating film to provide first and second contact fills in said first and second contact holes, respectively.
Claim 3
Dependent Claim
31 words
The method according to claim 1, wherein the step of depositing said first polysilicon layer includes alternately depositing an undoped polysilicon film and an impurity film of said first conductivity type.
Claim 4
Dependent Claim
31 words
The method according to claim 1, wherein the step of depositing said second polysilicon layer includes alternately depositing an undoped polysilicon film and an impurity film of said second conductivity type.
Claim 5
Dependent Claim
31 words
The method according to claim 7, wherein the step of depositing said second polysilicon layer is accomplished after completely removing said first polysilicon layer from said surface of said insulating film.
Claim 6
Dependent Claim
34 words
The method according to claim 2, wherein the step of depositing said second polysilicon layer is accomplished after removing said first polysilicon layer to a desired thickness from said surface of said insulating film.
Claim 7
Dependent Claim
16 words
The method according to claim 2, wherein said semiconductor substrate is of said first conductivity type.
Claim 8
Independent Claim
168 words
A method of making a semiconductor device comprising the steps of: preparing a semiconductor substrate; forming an insulating film on said semiconductor substrate; selectively removing said insulating film down to said semiconductor substrate to provide a first contact hole therein; depositing a first polysilicon layer of first conductivity type over said insulating film to fill said first contact hole therewith; selectively removing said first polysilicon layer and said insulating film down to said semiconductor substrate to provide a second contact hole therein; depositing a second polysilicon layer of a second conductivity type over said first polysilicon layer to fill said second contact hole therewith; removing said first and second polysilicon layers from a surface of said insulating film to provide first and second contact fills in said first and second contact holes, respectively; and heat-treating said semiconductor substrate to diffuse impurities, contained in each of said first and second contact fills, into said semiconductor substrate, said heat-treating step providing first and second diffused regions in said semiconductor substrate.
Claim 9
Independent Claim
168 words
A method of making a semiconductor device comprising the steps of: preparing a semiconductor substrate; forming an insulating film on said semiconductor substrate; selectively removing said insulating film down to said semiconductor substrate to provide a first contact hole therein; depositing a first polysilicon layer of first conductivity type over said insulating film to fill said first contact hole therewith; selectively removing said first polysilicon layer and said insulating film down to said semiconductor substrate to provide a second contact hole therein; depositing a second polysilicon layer of a second conductivity type over said first polysilicon layer to fill said second contact hole therewith; removing said first and second polysilicon layers from a surface of said insulating film to provide first and second contact fills in said first and second contact holes, respectively; and heat-treating said semiconductor substrate to diffuse impurities, contained in each of said first and second contact fills, into said semiconductor substrate, said heat-treating step providing first and second diffused regions in said semiconductor substrate.
Claim 10
Dependent Claim
31 words
The method according to claim 7, wherein the step of depositing said first polysilicon layer includes alternately depositing an undoped polysilicon film and an impurity film of said first conductivity type.
Claim 11
Dependent Claim
31 words
The method according to claim 7, wherein the step of depositing said second polysilicon layer includes alternately depositing an undoped polysilicon film and an impurity film of said second conductivity type.
Claim 12
Dependent Claim
31 words
The method according to claim 7, wherein the step of depositing said second polysilicon layer is accomplished after completely removing said first polysilicon layer from said surface of said insulating film.
Claim 13
Dependent Claim
34 words
The method according to claim 7, wherein the step of depositing said second polysilicon layer is accomplished after removing said first polysilicon layer to a desired thickness from said surface of said insulating film.
Claim 14
Dependent Claim
16 words
The method according to claim 7, wherein said semiconductor substrate is of said first conductivity type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-13 | 1997-03-15 | 1997-09-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-13 | 2001-03-15 | 2001-09-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-13 | 2005-03-15 | 2005-09-14 | $7700.00 | Window Closed / Lapsed |