Method of forming contact plugs for planarized integrated circuits

Claim 2

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material and said dielectric layer at approximately the same rate, such that all said filler material is removed from the surface of said dielectric layer, leaving said filler material only in said windows such that the perimeter surface of said window filler material extends above or below the surface of said dielectric layer by approximately no more than 0.3 microns; (d) forming a first masking layer over said plugs in windows overlying junction regions having a first conductivity type; (e) doping, with a second conductivity type dopant, the plugs in windows overlying junction regions having said second conductivity type; (f) removing said first masking layer; (g) forming a second masking layer over said plugs doped with said second conductivity type dopant; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 3

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material at a greater rate than said dielectric layer, such that said polysilicon plug is recessed below the surface of said dielectric layer to a depth of approximately no more than 0.3 microns; (d) forming a first masking layer over said plugs in windows overlying junction regions having a first conductivity type; (e) doping, with a second conductivity type dopant, the plugs in windows overlying junction regions having said second conductivity type; (f) removing said first masking layer; (g) forming a second masking layer over said plugs doped with said second conductivity type dopant; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 4

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material at a greater rate than said dielectric layer, such that said polysilicon plug is recessed below the surface of said dielectric layer to a depth of approximately no more than 0.3 microns; (d) forming a first masking layer over said plugs in windows overlying junction regions having a first conductivity type; (e) doping, with a second conductivity type dopant, the plugs in windows overlying junction regions having said second conductivity type; (f) removing said first masking layer; (g) forming a second masking layer over said plugs doped with said second conductivity type dopant; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 5

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which uses an endpoint detection such that detection occurs when said polysilicon filler material has been removed from said dielectric layer; (d) forming a first masking layer over said plugs in windows overlying junction regions having a first conductivity type; (e) doping, with a second conductivity type dopant, the plugs in windows overlying junction regions having said second conductivity type; (f) removing said first masking layer; (g) forming a second masking layer over said plugs doped with said second conductivity type dopant; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 6

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which uses an endpoint detection such that detection occurs when said polysilicon filler material has been removed from said dielectric layer; (d) forming a first masking layer over said plugs in windows overlying junction regions having a first conductivity type; (e) doping, with a second conductivity type dopant, the plugs in windows overlying junction regions having said second conductivity type; (f) removing said first masking layer; (g) forming a second masking layer over said plugs doped with said second conductivity type dopant; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 7

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material and said dielectric layer at approximately the same rate, such that all said filler material is removed from the surface of said dielectric layer, leaving said filler material only in said windows such that the perimeter surface of said window filler material extends above or below the surface of said dielectric layer by approximately no more than 0.3 microns; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second mask over said plugs doped with said second conductivity type dopant by forming, as a second mask, an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide mask layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 8

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material and said dielectric layer at approximately the same rate, such that all said filler material is removed from the surface of said dielectric layer, leaving said filler material only in said windows such that the perimeter surface of said window filler material extends above or below the surface of said dielectric layer by approximately no more than 0.3 microns; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second mask over said plugs doped with said second conductivity type dopant by forming, as a second mask, an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide mask layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 9

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material at a greater rate than said dielectric layer, such that said polysilicon plug is recessed below the surface of said dielectric layer to a depth of approximately no more than 0.3 microns; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second mask over said plugs doped with said second conductivity type dopant by forming, as a second mask, an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide mask layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 10

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which etches said polysilicon filler material at a greater rate than said dielectric layer, such that said polysilicon plug is recessed below the surface of said dielectric layer to a depth of approximately no more than 0.3 microns; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second mask over said plugs doped with said second conductivity type dopant by forming, as a second mask, an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide mask layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 11

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which uses an endpoint detection such that detection occurs when said polysilicon filler material has been removed from said dielectric layer; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second masking layer over said plugs doped with said second conductivity type dopant by forming an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.

Claim 12

An improved method for forming conductive plugs in contact windows in a dielectric layer overlying junction regions in an integrated circuit structure comprising: (a) forming contact windows in said dielectric layer in a pattern conforming to said junction regions; (b) forming a layer of polysilicon on said dielectric layer to fill said contact windows; (c) performing an etching process which uses an endpoint detection such that detection occurs when said polysilicon filler material has been removed from said dielectric layer; (d) forming a first silicon nitride masking layer over said structure including plugs in windows overlying junction regions having a first conductivity type with openings in said mask exposing plugs in windows overlying junction regions having said second conductivity type; (e) doping, with a second conductivity type dopant, said plugs in windows overlying junction regions having said second conductivity type; (f) forming a second masking layer over said plugs doped with said second conductivity type dopant by forming an oxide layer on the top surface of said doped plugs; (g) removing said first silicon nitride masking layer; (h) doping, with a first conductivity type dopant, the plugs in windows overlying junction regions having said first conductivity type; and (i) removing said second oxide masking layer; whereby each window has a plug therein having a conductivity type matching the underlying junction region.