Method of forming electrode/wiring layer

Claim 1

A method of forming an interconnection structure, including an electrode/wiring layer, on a semiconductor substrate, comprising the steps of: forming on the semiconductor substrate an insulating structure having a recess which extends from the surface of said semiconductor substrate to the exterior surface of said insulating structure; forming a polycrystalline silicon body within said recess of said insulating structure, said polycrystalline silicon body filling only said recess; forming an aluminum layer to cover the entire polycrystalline silicon body and a surface of said insulating structure surrounding said polycrystalline silicon body, said aluminum layer being sufficiently large relative to said polycrystalline silicon body to allow said polycrystalline silicon body to convert completely into a silicon aluminum alloy during a heating process; and converting through a heating process substantially all of the polycrystalline silicon in said polycrystalline silicon body and the aluminum in the portion of said aluminum layer adjacent to said polycrystalline silicon body into an alloy of aluminum and silicon to form an electrode/wiring layer establishing a good electrical contact with the semi-conductor substrate, the electrode/wiring layer comprising the alloy formed in said recess and the remaining portion of said aluminum layer.

Claim 2

A method of forming an interconnection structure, including an electrode/wiring layer, on a semiconductor substrate, comprising the steps of: forming on the semiconductor substrate an insulating structure having a recess which extends from the surface of said semiconductor substrate to the exterior surface of said insulating structure; forming a polycrystalline silicon body within said recess of said insulating structure, said polycrystalline silicon body filling only said recess; forming an aluminum layer to cover the entire polycrystalline silicon body and a surface of said insulating structure surrounding said polycrystalline silicon body, said aluminum layer being sufficiently large relative to said polycrystalline silicon body to allow said polycrystalline silicon body to convert completely into a silicon aluminum alloy during a heating process; and converting through a heating process substantially all of the polycrystalline silicon in said polycrystalline silicon body and the aluminum in the portion of said aluminum layer adjacent to said polycrystalline silicon body into an alloy of aluminum and silicon to form an electrode/wiring layer establishing a good electrical contact with the semi-conductor substrate, the electrode/wiring layer comprising the alloy formed in said recess and the remaining portion of said aluminum layer.

Claim 11

A method of forming an electrode layer on a silicon substrate having a semiconductor region therein comprising the steps of: forming an insulating structure on the silicon substrate having a semiconductor region therein, said insulating member having a recess which extends from the surface of said semiconductor region to the exterior surface of said insulating structure and exposes a surface of said semiconductor region; forming a polycrystalline silicon body within said recess of said insulating structure, said polycrystalline silicon body filling only said recess; forming an aluminum layer to cover the entire polycrystalline silicon body and a surface of said insulating structure surrounding said polycrystalline silicon body, said aluminum layer being sufficiently large relative to the polycrystalline silicon body to allow said polycrystalline silicon body to convert completely into a silicon aluminum alloy during a heating process; and converting through a heating process substantially all of the polycrystalline silicon in said polycrystalline silicon body and the aluminum in the portion of the aluminum layer adjacent to said polycrystalline silicon body into an alloy of aluminum and silicon to form an electrode layer establishing a good electrical contact with the semiconductor region, the electrode layer comprising the alloy formed in said recess.

Claim 12

A method of forming an electrode layer on a silicon substrate having a semiconductor region therein comprising the steps of: forming an insulating structure on the silicon substrate having a semiconductor region therein, said insulating member having a recess which extends from the surface of said semiconductor region to the exterior surface of said insulating structure and exposes a surface of said semiconductor region; forming a polycrystalline silicon body within said recess of said insulating structure, said polycrystalline silicon body filling only said recess; forming an aluminum layer to cover the entire polycrystalline silicon body and a surface of said insulating structure surrounding said polycrystalline silicon body, said aluminum layer being sufficiently large relative to the polycrystalline silicon body to allow said polycrystalline silicon body to convert completely into a silicon aluminum alloy during a heating process; and converting through a heating process substantially all of the polycrystalline silicon in said polycrystalline silicon body and the aluminum in the portion of the aluminum layer adjacent to said polycrystalline silicon body into an alloy of aluminum and silicon to form an electrode layer establishing a good electrical contact with the semiconductor region, the electrode layer comprising the alloy formed in said recess.