Al/Si metallization process

Abstract

Abstract An improved method for the manufacture of semiconductor devices which inhibits the dissolution of substrate silicon from the area of the substrate exposed by a contact window. Two individual layers are disposed on a protective insulative layer such as silicon dioxide which is itself disposed upon a semiconductor wafer. The first layer on the insulating layer is silicon and the second is aluminum. The improvement consists of forming these two layers in specific amounts and with high precision. An aluminum interconnect pattern is then defined using standard photomask and aluminum etch techniques. In a separate step, the silicon is etched using plasma etching techniques. The remaining Al/Si layers are homogenized into an alloy to form the ohmic contacts by heating the wafer in a furnace at high temperatures.

Inventors

• 👤 Gary Roberts

Bibliographic Details