US4782030A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing bipolar semiconductor device
Assignee: Toshiba Corp
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Filing: 1987-07-07
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Granted: 1988-11-01
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Expires: 2007-07-07
Abstract
Abstract A laminated film made of a first insulating film and a second insulating film having a selectivity of etching condition to the first insulating film is selectively formed on a first conductivity type semiconductor substrate to use the substrate under the laminated film as a base and emitter active region forming region. The laminated film remains until an anisotropically dry etching step is finished to prevent the base and emitter active region from damaging due to an etching atmosphere at anisotropically dry etching time.
Inventors
- 👤 Yasuhiro Katsumata
- 👤 Takao Ito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:19
CPC Classifications
H; H10; H10D; H10D10/00; H10D10/01; H10P; H10P14/00; H10P14/60; H10P14/61; H10D62/00; H10D62/10; H10D62/13; H10D62/137; H10D62/17; H10D62/177; Y; Y10; Y10S; Y10S148/00; Y10S148/01; Y10S148/011
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
301 words
A method of manufacturing a semiconductor device comprising the steps of: forming on a first conductivity type semiconductor substrate, a first insulating layer comprising a first oxidation resistant insulating film, a second insulating film formed on said first oxidation resistant insulating film and having a selectivity of an etching condition to said first insulating film, and a third oxidation resistant insulating film formed on said second insulating layer, forming a fourth oxidation resistant insulating film on the structure having said first insulating layer, selectively etching said fourth insulating film so that part of the fourth insulating film remains on the side wall of said first insulating layer, selectively oxidizing the surface of the semiconductor substrate using the remaining fourth insulating film as a mask to form an oxide layer on the semiconductor substrate, removing the remaining fourth and third insulating films, exposing the surface of said semiconductor region between said first insulating layer and said buried oxide layer, forming a first non-single crystal semiconductor film on the structure having said first insulating layer, selectively removing said first non-single crystal semiconductor film on said second insulating film, doping a second conductivity type impurity to said first non-single crystal semiconductor film, removing said second insulating film, thermally heating the surface of said first non-single crystal semiconductor film to form a thermal oxide film and to diffuse the impurity in said first non-single crystal semiconductor film into said semiconductor region to form a second conductivity type first semiconductor layer, removing said first insulating film, doping the second conductivity type impurity into the surface of said semiconductor region adjacent to the first semiconductor layer, using said thermal oxide film as a mask, to form a second semiconductor layer, and forming a first conductivity type third semiconductor layer on the surface of said second semiconductor layer.
Claim 2
Independent Claim
301 words
A method of manufacturing a semiconductor device comprising the steps of: forming on a first conductivity type semiconductor substrate, a first insulating layer comprising a first oxidation resistant insulating film, a second insulating film formed on said first oxidation resistant insulating film and having a selectivity of an etching condition to said first insulating film, and a third oxidation resistant insulating film formed on said second insulating layer, forming a fourth oxidation resistant insulating film on the structure having said first insulating layer, selectively etching said fourth insulating film so that part of the fourth insulating film remains on the side wall of said first insulating layer, selectively oxidizing the surface of the semiconductor substrate using the remaining fourth insulating film as a mask to form an oxide layer on the semiconductor substrate, removing the remaining fourth and third insulating films, exposing the surface of said semiconductor region between said first insulating layer and said buried oxide layer, forming a first non-single crystal semiconductor film on the structure having said first insulating layer, selectively removing said first non-single crystal semiconductor film on said second insulating film, doping a second conductivity type impurity to said first non-single crystal semiconductor film, removing said second insulating film, thermally heating the surface of said first non-single crystal semiconductor film to form a thermal oxide film and to diffuse the impurity in said first non-single crystal semiconductor film into said semiconductor region to form a second conductivity type first semiconductor layer, removing said first insulating film, doping the second conductivity type impurity into the surface of said semiconductor region adjacent to the first semiconductor layer, using said thermal oxide film as a mask, to form a second semiconductor layer, and forming a first conductivity type third semiconductor layer on the surface of said second semiconductor layer.
Claim 3
Dependent Claim
149 words
The method according to claim 1, wherein said step for selectively etching said fourth insulating film comprises: forming a second non-signal crystal semiconductor film on said fourth insulating film and a fifth insulating film on said second non-single crystal semiconductor film, having an etching condition which has a selectivity to said fourth insulating film and, then, selectively etching the fifth insulating film by an anisotropically etching method so that the part thereof only on the side wall of said first insulating layer remains, selectively etching said second non-single crystal semiconductor film using the remaining fifth insulating film as a mask so that the part thereof only on the side wall of said first insulating layer remains, thermally oxidizing the remaining second non-single crystal semiconductor film to form a thermal oxide film, and etching said fourth insulating film by an etching method, using said thermal oxide film as a mask.
Claim 4
Dependent Claim
50 words
The method according to claim 1, wherein said step for selectively etching said fourth insulating film comprises: forming on said fourth insulating film, a fifth insulating film having a selectivity of etching condition to said fourth insulating film and, then, etching said fifth insulating film by an anisotropically etching method.
Claim 5
Dependent Claim
47 words
The method according to claim 1, wherein said step of selectively removing said first non-single crystal semiconductor film comprises: coating the entire surface of said first non-single crystal semiconductor with an organic compound to form an organic layer, and etching the layer by an anisotropically etching method.
Claim 6
Dependent Claim
32 words
The method according to claim 1, wherein an impurity of said second conductivity type is doped into said first non-single crystal semiconductor film, when the first non-single crystal semiconductor film is formed.
Claim 7
Dependent Claim
19 words
The method according to claim 1, wherein said first non-single crystal semiconductor film is formed of a polyside film.
References Cited (Backward Citations)
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