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US5817530A Expired / Lapsed US ⏱️ 0.0 years remaining

Use of conductive lines on the back side of wafers and dice for semiconductor interconnects

Assignee: Micron Technology Inc
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Filing: 1996-09-27
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Granted: 1998-10-06
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Expires: 2016-09-27
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Abstract

Abstract An apparatus and a method for increasing integrated circuit density comprising semiconductor wafers, wafer portions or dice ("semiconductor elements") having conductive traces on the back side thereof. These semiconductor elements are stacked such that the traces on the back side of an upper semiconductor become part of the interconnect traces of the semiconductor stacked below. The traces lead to one or more edges of the semiconductor element such that the traces can make electrical contact with an external substrate, leadframe, or wiring arrangement.

Inventors

  • 👤 Michael B. Ball

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 12:06
CPC Classifications
H; H10; H10W; H10W90/00; H10W72/00; H10W72/01; H10W72/0198; H10W72/071; H10W72/072; H10W72/07251; H10W72/07254; H10W72/20; H10W72/241; H10W72/247; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/834; H10W72/90; H10W72/941; H10W90/701; H10W90/721; H10W90/722; H10W90/724

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 73 words
A method of producing a semiconductor element configuration, comprising the steps of: providing a discrete semiconductor element having a first active exterior surface and a second opposing exterior surface, wherein said first surface includes integrated circuitry thereon; forming at least one flip chip connection on said first active exterior surface in communication with said integrated circuitry; and forming at least one conductive trace having a contact area on said second opposing exterior surface.
Claim 2
Independent Claim 73 words
A method of producing a semiconductor element configuration, comprising the steps of: providing a discrete semiconductor element having a first active exterior surface and a second opposing exterior surface, wherein said first surface includes integrated circuitry thereon; forming at least one flip chip connection on said first active exterior surface in communication with said integrated circuitry; and forming at least one conductive trace having a contact area on said second opposing exterior surface.
Claim 3
Dependent Claim 27 words
The method of claim 1, further comprising the step of interposing an insulative material between said second opposing exterior surface and said at least one conductive trace.
Claim 4
Dependent Claim 45 words
The method of claim 1, wherein the step of forming said at least one conductive trace includes: applying a layer of conductive material on said second opposing exterior surface; and removing a portion of said conductive material to define said at least one conductive trace.
Claim 5
Dependent Claim 34 words
The method of claim 1, wherein the step of forming said at least one conductive trace comprises applying a conductive material defining said at least one conductive trace to said second opposing exterior surface.
Claim 6
Independent Claim 168 words
A method of forming a semiconductor element stack configuration, comprising: providing a plurality of discrete semiconductor elements, each having a first exterior surface and a second opposing exterior surface, wherein at least one of said first exterior surfaces includes integrated circuitry thereon; forming at least one flip chip connection on said at least one first exterior surface including integrated circuitry in electrical communication therewith; forming at least one conductive trace having a contact area on at least one of said second opposing exterior surfaces of a different semiconductor element than that which includes said integrated circuitry; aligning said plurality of semiconductor elements facing in the same direction, one abutting another such that said second opposing exterior surface of a first discrete semiconductor element carrying said at least one conductive trace abuts said first exterior surface of a second semiconductor element having said integrated circuitry, wherein the at least one flip chip connection of the second semiconductor element contacts the contact area of the adjacent first discrete semiconductor element.
Claim 7
Independent Claim 168 words
A method of forming a semiconductor element stack configuration, comprising: providing a plurality of discrete semiconductor elements, each having a first exterior surface and a second opposing exterior surface, wherein at least one of said first exterior surfaces includes integrated circuitry thereon; forming at least one flip chip connection on said at least one first exterior surface including integrated circuitry in electrical communication therewith; forming at least one conductive trace having a contact area on at least one of said second opposing exterior surfaces of a different semiconductor element than that which includes said integrated circuitry; aligning said plurality of semiconductor elements facing in the same direction, one abutting another such that said second opposing exterior surface of a first discrete semiconductor element carrying said at least one conductive trace abuts said first exterior surface of a second semiconductor element having said integrated circuitry, wherein the at least one flip chip connection of the second semiconductor element contacts the contact area of the adjacent first discrete semiconductor element.
Claim 8
Dependent Claim 35 words
The method of claim 5, further comprising interposing an insulative material between said second opposing exterior surface of said at least one semiconductor element carrying said at least one conductive trace and said conductive trace.
Claim 9
Dependent Claim 22 words
The method of claim 5, further comprising routing said at least one conductive trace to an edge of its respective semiconductor element.
Claim 10
Dependent Claim 45 words
The method of claim 5, wherein the step of forming said at least one conductive trace includes: applying a layer of conductive material on said second opposing exterior surface; and removing a portion of said conductive material to define said at least one conductive trace.
Claim 11
Dependent Claim 34 words
The method of claim 5, wherein the step of forming said at least one conductive trace comprises applying a conductive material defining said at least one conductive trace to said second opposing exterior surface.
Claim 12
Independent Claim 207 words
A method of forming a semiconductor element assembly, comprising: providing a plurality of semiconductor elements, each having a first exterior surface and a second opposing exterior surface; at least one of said first exterior surfaces includes integrated circuitry thereon; forming at least one flip chip connection on said at least one first exterior surface including integrated circuitry in electrical communication therewith; forming at least one conductive trace having a contact area on at least one of said second opposing exterior surfaces of a different semiconductor element than that which includes said integrated circuitry and routing said conductive trace to an edge of that semiconductor element to terminate at an external connection point; aligning said plurality of semiconductor elements facing in the same direction, one abutting another such that said second opposing exterior surface of a first discrete semiconductor element carrying said at least one conductive trace abuts said first exterior surface of a second semiconductor element having said integrated circuitry, wherein the at least one flip chip connection of the second semiconductor element contacts the contact area of the adjacent first discrete semiconductor element; providing at least one substrate including at least one contact; and contacting said at least one substrate contact to said external connection point.
Claim 13
Independent Claim 207 words
A method of forming a semiconductor element assembly, comprising: providing a plurality of semiconductor elements, each having a first exterior surface and a second opposing exterior surface; at least one of said first exterior surfaces includes integrated circuitry thereon; forming at least one flip chip connection on said at least one first exterior surface including integrated circuitry in electrical communication therewith; forming at least one conductive trace having a contact area on at least one of said second opposing exterior surfaces of a different semiconductor element than that which includes said integrated circuitry and routing said conductive trace to an edge of that semiconductor element to terminate at an external connection point; aligning said plurality of semiconductor elements facing in the same direction, one abutting another such that said second opposing exterior surface of a first discrete semiconductor element carrying said at least one conductive trace abuts said first exterior surface of a second semiconductor element having said integrated circuitry, wherein the at least one flip chip connection of the second semiconductor element contacts the contact area of the adjacent first discrete semiconductor element; providing at least one substrate including at least one contact; and contacting said at least one substrate contact to said external connection point.
Claim 14
Dependent Claim 24 words
The method of claim 10, further comprising interposing an insulative material between said second opposing exterior surface and said at least one conductive trace.
Claim 15
Dependent Claim 45 words
The method of claim 10, wherein the step of forming said at least one conductive trace includes: applying a layer of conductive material on said second opposing exterior surface; and removing a portion of said conductive material to define said at least one conductive trace.
Claim 16
Dependent Claim 34 words
The method of claim 10, wherein the step of forming said at least one conductive trace comprises applying a conductive material defining said at least one conductive trace to said second opposing exterior surface.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-10-05 2002-04-06 2002-10-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-10-05 2006-04-06 2006-10-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-10-05 2010-04-06 2010-10-06 $7700.00 Window Closed / Lapsed

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