Patent US5789277A successfully refreshed from Google Patents.
US5789277A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making chalogenide memory device
Assignee: Round Rock Research LLC
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Filing: 1996-07-22
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Granted: 1998-08-04
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Expires: 2016-07-22
Abstract
Abstract A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms.
Inventors
- 👤 Russell C. Zahorik
- 👤 Alan R. Reinberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:24
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/20; H10N70/231; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/366; H10N70/011; H10N70/061; H10N70/066; H10N70/068; H10N70/801; H10N70/821; H10N70/826; H10N70/881; H10N70/882; H10N70/8828
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
145 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of a first material onto a conductive substrate material; forming an edge feature in said layer of said first material; applying a layer of an insulative material onto said edge feature of said layer of said first material; applying a layer of a third material onto said layer of said insulative material; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 2
Independent Claim
145 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of a first material onto a conductive substrate material; forming an edge feature in said layer of said first material; applying a layer of an insulative material onto said edge feature of said layer of said first material; applying a layer of a third material onto said layer of said insulative material; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 3
Dependent Claim
39 words
The method of claim 1, wherein forming an edge feature in said layer of said first material comprises removing a portion of said layer of said first material to define an opening in said layer of said first material.
Claim 4
Dependent Claim
13 words
The method of claim 2, wherein said opening extends to said substrate material.
Claim 5
Dependent Claim
39 words
The method of claim 1, wherein removing a portion of said layer of said third material comprises: removing a portion of said layer of said third material to define a remaining portion of said layer of said third material.
Claim 6
Dependent Claim
51 words
The method of claim 4, wherein removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material comprises removing a portion of said layer of said insulative material not covered by said remaining portion of said layer of said third material.
Claim 7
Dependent Claim
18 words
The method of claim 5, further comprising removing said remaining portion of said layer of said third material.
Claim 8
Independent Claim
158 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of a insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; forming an edge feature in said layer of said second material; forming an edge feature in said layer of said insulative material; applying a layer of a third material onto said edge features of said layers of said insulative and second materials; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 9
Independent Claim
158 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of a insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; forming an edge feature in said layer of said second material; forming an edge feature in said layer of said insulative material; applying a layer of a third material onto said edge features of said layers of said insulative and second materials; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 10
Dependent Claim
39 words
The method of claim 7, wherein forming an edge feature in said layer of said second material comprises removing a portion of said layer of said second material to define an opening in said layer of said second material.
Claim 11
Dependent Claim
20 words
The method of claim 8, wherein said opening extends to said edge feature in said layer of said insulative material.
Claim 12
Dependent Claim
39 words
The method of claim 7, wherein removing a portion of said layer of said third material comprises: removing a portion of said layer of said third material to define a remaining portion of said layer of said third material.
Claim 13
Dependent Claim
51 words
The method of claim 10, wherein removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material comprises removing a portion of said layer of said insulative material not covered by said remaining portion of said layer of said third material.
Claim 14
Dependent Claim
18 words
The method of claim 11, further comprising removing said remaining portion of said layer of said third material.
Claim 15
Independent Claim
180 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of an insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; applying a layer of a third material onto said layer of said second material; forming an edge feature in said layer of said third material; applying a layer of a fourth material onto said edge feature of said layer of said third material; removing a portion of said layer of said fourth material; removing a portion of said layer of said second material to define a pore in said layer of said second material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 16
Independent Claim
180 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of an insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; applying a layer of a third material onto said layer of said second material; forming an edge feature in said layer of said third material; applying a layer of a fourth material onto said edge feature of said layer of said third material; removing a portion of said layer of said fourth material; removing a portion of said layer of said second material to define a pore in said layer of said second material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 17
Dependent Claim
39 words
The method of claim 13, wherein forming an edge feature in said layer of said third material comprises removing a portion of said layer of said third material to define an opening in said layer of said third material.
Claim 18
Dependent Claim
16 words
The method of claim 14, wherein said opening extends to said layer of said second material.
Claim 19
Dependent Claim
39 words
The method of claim 13, wherein removing a portion of said layer of said fourth material comprises: removing a portion of said layer of said fourth material to define a remaining portion of said layer of said fourth material.
Claim 20
Dependent Claim
51 words
The method of claim 16, wherein removing a portion of said layer of said second material to define a pore in said layer of said second material comprises removing a portion of said layer of said second material not covered by said remaining portion of said layer of said fourth material.
Claim 21
Dependent Claim
51 words
The method of claim 16, wherein removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material comprises removing a portion of said layer of said insulative material not covered by said remaining portion of said layer of said fourth material.
Claim 22
Dependent Claim
18 words
The method of claim 18, further comprising removing said remaining portion of said layer of said fourth material.
Claim 23
Independent Claim
145 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of an insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; forming an edge feature in said layer of said second material; applying a layer of a third material onto said edge feature of said layer of said second material; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 24
Independent Claim
145 words
A method of fabricating a chalcogenide memory cell, comprising: applying a layer of an insulative material onto a conductive substrate material; applying a layer of a second material onto said layer of said insulative material; forming an edge feature in said layer of said second material; applying a layer of a third material onto said edge feature of said layer of said second material; removing a portion of said layer of said third material; removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material; applying a layer of a first conductive material into said pore; applying a layer of a chalcogenide material into said pore and onto said layer of said first conductive material; and applying a layer of a second conductive material into said pore and onto said layer of said chalcogenide material.
Claim 25
Dependent Claim
39 words
The method of claim 20, wherein forming an edge feature in said layer of said second material comprises removing a portion of said layer of said second material to define an opening in said layer of said second material.
Claim 26
Dependent Claim
16 words
The method of claim 21, wherein said opening extends to said layer of said insulative material.
Claim 27
Dependent Claim
39 words
The method of claim 20, wherein removing a portion of said layer of said third material comprises: removing a portion of said layer of said third material to define a remaining portion of said layer of said third material.
Claim 28
Dependent Claim
51 words
The method of claim 23, wherein removing a portion of said layer of said insulative material to define a pore in said layer of said insulative material comprises removing a portion of said layer of said insulative material not covered by said remaining portion of said layer of said third material.
Claim 29
Dependent Claim
18 words
The method of claim 24, further comprising removing said remaining portion of said layer of said third material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-03 | 2002-02-02 | 2002-08-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-03 | 2006-02-02 | 2006-08-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-03 | 2010-02-02 | 2010-08-04 | $7700.00 | Window Closed / Lapsed |