US5780313A
Expired / Lapsed
US
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Method of fabricating semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-03-31
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Granted: 1998-07-14
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Expires: 2014-03-31
Abstract
Abstract An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed on a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:43
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/54; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32018; H01J37/32192; H01J37/32321; H01J37/32339; H01J37/32431; H01J37/3266; H01J37/32678; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2923; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3411; H10P14/3412; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P72/00; H10P72/04; H10P72/0402; H10P72/0418; H10P72/0421; H10P72/0431; H10P72/0436; H10P72/0451; H10P72/0452; H10P72/0456; H10P72/0466; H10P72/0468; H10P72/0478; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3321; Y; Y10; Y10S; Y10S438/00; Y10S438/907
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
194 words
A method of fabricating a electronic device including at least a first layer and a second layer comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the first layer or the second layer in the first chamber on a substrate where said first CVD forming step includes inputting a first reactive gas to the first chamber where the first reactive gas forms said one of the first and second layers; and a second CVD forming step for forming in the second chamber the other one of said first layer and said second layer to thereby form the first and second layers of the device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the first and second layers; wherein the flow of reactive gas in at least one of said first and second reaction chambers is substantially perpendicular to the substrate.
Claim 2
Independent Claim
194 words
A method of fabricating a electronic device including at least a first layer and a second layer comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the first layer or the second layer in the first chamber on a substrate where said first CVD forming step includes inputting a first reactive gas to the first chamber where the first reactive gas forms said one of the first and second layers; and a second CVD forming step for forming in the second chamber the other one of said first layer and said second layer to thereby form the first and second layers of the device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the first and second layers; wherein the flow of reactive gas in at least one of said first and second reaction chambers is substantially perpendicular to the substrate.
Claim 3
Independent Claim
200 words
A method of fabricating a semiconductor device including at least an insulating layer and a semiconducting layer comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the insulating layer or the semiconducting layer in the first chamber on a substrate where the semiconducting layer comprises silicon, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the semiconductive and insulating layers; and a second CVD forming step for forming in the second chamber the other one of said insulating-layer and said semiconducting layer to thereby form the insulating and semiconducting layers of the semiconductor device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the semiconductor and insulating layers; wherein the flow of reactive gas in the chamber in which the insulating layer is formed is substantially perpendicular to the substrate.
Claim 4
Independent Claim
200 words
A method of fabricating a semiconductor device including at least an insulating layer and a semiconducting layer comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the insulating layer or the semiconducting layer in the first chamber on a substrate where the semiconducting layer comprises silicon, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the semiconductive and insulating layers; and a second CVD forming step for forming in the second chamber the other one of said insulating-layer and said semiconducting layer to thereby form the insulating and semiconducting layers of the semiconductor device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the semiconductor and insulating layers; wherein the flow of reactive gas in the chamber in which the insulating layer is formed is substantially perpendicular to the substrate.
Claim 5
Independent Claim
21 words
A method as in claims 1 or 2 where at least one of said CVD forming comprises electron cyclotron resonance CVD.
Claim 6
Dependent Claim
32 words
The method of claim 1 wherein only one substrate is subjected to the substantially perpendicular flow of the reactive gas in said at least one of the first and second reaction chambers.
Claim 7
Dependent Claim
16 words
A method as in claim 2 where said insulating layer comprises silicon nitride or silicon dioxide.
Claim 8
Dependent Claim
26 words
A method as in claim 2 where the CVD step utilized to form at least said insulating layer includes utilizing a magnetic field and microwave energy.
Claim 9
Dependent Claim
12 words
A method as in claim 2 where said semiconductor layer is amorphous.
Claim 10
Dependent Claim
11 words
A method as in claim 2 where said semiconductor is microcrystalline.
Claim 11
Dependent Claim
30 words
The method of claim 2 wherein only one substrate is subjected to the substantially perpendicular flow of the reactive gas in said chamber in which the insulating layer is formed.
Claim 12
Independent Claim
214 words
A method of fabricating a semiconductor device including at least a first silicon containing layer and a second silicon containing layer adjacent thereto, said method comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the first and second silicon containing layers in the first chamber on a substrate, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the first and second silicon containing layers; a second CVD forming step for forming in the second chamber the other one of said first and second silicon containing layers to thereby form the first and second silicon containing layers of the semiconductor device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the first and second silicon containing layers; and exhausting at least one of the first and second chambers with an exhaust means including a turbo-molecular pump interposed between said last-mentioned chamber and a vacuum pump.
Claim 13
Independent Claim
214 words
A method of fabricating a semiconductor device including at least a first silicon containing layer and a second silicon containing layer adjacent thereto, said method comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming one of the first and second silicon containing layers in the first chamber on a substrate, where said first CVD forming step includes inputting a first reactive gas to the first chamber, and where the first reactive gas forms said one of the first and second silicon containing layers; a second CVD forming step for forming in the second chamber the other one of said first and second silicon containing layers to thereby form the first and second silicon containing layers of the semiconductor device where said second CVD forming step includes inputting a second reactive gas to the second chamber where the second reactive gas forms said other one of the first and second silicon containing layers; and exhausting at least one of the first and second chambers with an exhaust means including a turbo-molecular pump interposed between said last-mentioned chamber and a vacuum pump.
Claim 14
Independent Claim
24 words
A method as in claims 1, 2, or 10 where at least plasma CVD is effected in one of said first and second chambers.
Claim 15
Independent Claim
24 words
A method as in claims 1, 2, or 10 where at least photo CVD is effected in one of said first and second chambers.
Claim 16
Independent Claim
22 words
A method as in claims 1, 2, or 10 where a third layer of the device is formed in a third chamber.
Claim 17
Dependent Claim
29 words
The method of claim 10 wherein at least one of said first and second silicon containing layers of the semiconductor device is a non-single crystalline semiconductor layer comprising silicon.
Claim 18
Independent Claim
160 words
A method for fabricating electronic devices comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming a first layer on a first substrate in the first chamber where said first CVD forming step includes inputting a first reactive gas to the first chamber and activating said first reactive gas to form said first layer through CVD; a second CVD forming step for forming a second layer on a second substrate in the second chamber where said second CVD forming step includes inputting a second reactive gas to the second chamber and activating said second reactive gas to form the second layer through CVD, wherein the flow of the reactive gas in at least one of the first and second reaction chambers is substantially perpendicular to the substrate.
Claim 19
Independent Claim
160 words
A method for fabricating electronic devices comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each other by at least one gate valve; a first CVD forming step for forming a first layer on a first substrate in the first chamber where said first CVD forming step includes inputting a first reactive gas to the first chamber and activating said first reactive gas to form said first layer through CVD; a second CVD forming step for forming a second layer on a second substrate in the second chamber where said second CVD forming step includes inputting a second reactive gas to the second chamber and activating said second reactive gas to form the second layer through CVD, wherein the flow of the reactive gas in at least one of the first and second reaction chambers is substantially perpendicular to the substrate.
Claim 20
Dependent Claim
30 words
A method according to claim 5 wherein at least one of said first and second layers comprises a material selected from the group consisting of silicon oxide and silicon nitride.
Claim 21
Dependent Claim
22 words
A method according to claim 5 wherein at least one of said first and second layers is a semiconductor layer comprising germanium.
Claim 22
Dependent Claim
20 words
A method according to claim 15 wherein at least one of said first and second layers comprises SiO 2-x (0<x<2).
Claim 23
Dependent Claim
22 words
A method according to claim 15 wherein at least one of said first and second layers comprises Si 3 N 4-x (0<x<4).
Claim 24
Independent Claim
159 words
A method for fabricating electronic devices comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each-other by at least one gate valve; a first CVD forming step for forming a first layer on a first substrate in the first chamber where said first CVD forming step includes inputting a first reactive gas to the first chamber and activating said first reactive gas to form said first layer through CVD; a second CVD forming step for forming a second layer on a second substrate in the second chamber where said second CVD forming step includes inputting a second reactive gas to the second chamber and activating said second reactive gas to form the second layer through CVD; and exhausting at least said first chamber with an exhaust means including a turbo-molecular pump interposed between the first chamber and a vacuum pump.
Claim 25
Independent Claim
159 words
A method for fabricating electronic devices comprising the steps of: preparing a multi-chamber CVD apparatus having at least a first chamber and a second chamber, wherein said first and second chambers are isolated from each-other by at least one gate valve; a first CVD forming step for forming a first layer on a first substrate in the first chamber where said first CVD forming step includes inputting a first reactive gas to the first chamber and activating said first reactive gas to form said first layer through CVD; a second CVD forming step for forming a second layer on a second substrate in the second chamber where said second CVD forming step includes inputting a second reactive gas to the second chamber and activating said second reactive gas to form the second layer through CVD; and exhausting at least said first chamber with an exhaust means including a turbo-molecular pump interposed between the first chamber and a vacuum pump.
Claim 26
Dependent Claim
30 words
A method according to claim 20 wherein at least one of said first and second layers comprises a material selected from the group consisting of silicon oxide and silicon nitride.
Claim 27
Dependent Claim
22 words
A method according to claim 20 wherein at least one of said first and second layers is a semiconductor layer comprising germanium.
Claim 28
Dependent Claim
20 words
A method according to claim 20 wherein at least one of said first and second layers comprises SiO2 2-x (0<x<2).
Claim 29
Dependent Claim
21 words
A method according to claim 20 wherein at least one of said first-and second layers comprises Si 3 N 4-x (0<x<4).
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-07-13 | 2002-01-12 | 2002-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-07-13 | 2006-01-12 | 2006-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-07-13 | 2010-01-12 | 2010-07-14 | $7700.00 | Window Closed / Lapsed |