US4398343A
Expired / Lapsed
US
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Method of making semi-amorphous semiconductor device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1981-05-21
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Granted: 1983-08-16
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Expires: 2001-05-21
Abstract
Abstract A semi-amorphous semiconductor device manufacturing method in which a non-single crystal semiconductor layer is provided on a substrate to form therebetween a PN, PIN, PI or NI junction and a current is applied to the non-single crystal semiconductor layer to provide a semi-amorphous semiconductor layer. When the current is applied to the non-single crystal semiconductor layer, it is irradiated by light and/or heated at the same time.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:58
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10D; H10D62/00; H10D62/40; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H10P95/00; H10P95/80
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
79 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the step of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 2
Independent Claim
79 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the step of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 3
Dependent Claim
53 words
A manufacturing method according to claim 1, wherein the substrate is conductive and light-permeable; the current is applied to the non-single crystal semiconductor through the conductive light-permeable, substrate and the conductive layer formed on the non-single crystal semiconductor; and the light is applied to the non-single crystal semiconductor through the conductive, light-permeable substrate.
Claim 4
Dependent Claim
55 words
A manufacturing method according to claim 1, wherein the substrate is conductive; the conductive layer is light-permeable; the current is applied to the non-single crystal semiconductor through the conductive substrate and the conductive layer formed on the non-single crystal semiconductor; and the light is applied to the non-single crystal semiconductor through the light-permeable conductive layer.
Claim 5
Dependent Claim
88 words
A manufacturing method according to claim 1 wherein a conductive layer is formed on the substrate prior to the formation of the non-single crystal semiconductor on the substrate; the substrate and the conductive layer formed on the substrate are light-permeable; the current is applied to the non-single crystal semiconductor through the light-permeable conductive layer formed on the substrate and the conductive layer formed on the non-single crystal semiconductor layer; and the light is applied to the non-single crystal semiconductor through the light-permeable substrate and the light-permeable conductor layer.
Claim 6
Dependent Claim
82 words
A manufacturing method according to claim 1 wherein a conductive layer is formed on the substrate prior to the formation of the non-single crystal semiconductor on the substrate; the conductive layer formed on the non-single crystal semiconductor is light-permeable; the current is applied to the non-single crystal semiconductor through the conductive layer formed on the substrate and the conductive layer formed on the non-single crystal semiconductor layer; and the light is applied to the non-single crystal semiconductor through the light-permeable, conductive layer.
Claim 7
Dependent Claim
63 words
A manufacturing method according to claim 1 wherein when the conductive layer is formed on the non-single crystal semiconductor, at least two conductive layers are formed on the non-single crystal semiconductor; the substrate is light-permeable; the current is applied to the non-single crystal semiconductor through the two conductive layers; and the light is applied to the non-single crystal semiconductor through the light-permeable substrate.
Claim 8
Dependent Claim
68 words
A manufacturing method according to claim 1 wherein when the conductive layer is formed on the non-single crystal semiconductor, at least two conductive layers are formed on the non-single crystal semiconductor; the two conductive layers are light-permeable; the current is applied to the non-single crystal semiconductor through the two light-permeable conductive layers; and the light is applied to the non-single crystal semiconductor through the two light-permeable conductive layers.
Claim 9
Dependent Claim
35 words
A manufacturing method according to claim 1 wherein the conductive layer is retained as an electrode of the semi-amorphous semiconductor device after the application of current to the non-single crystal semiconductor through the conductive layer.
Claim 10
Dependent Claim
50 words
A manufacturing method according to claim 1 wherein, after the application of current to the non-single crystal semiconductor through the conductive layer and the formation of the semi-amorphous semiconductor, the conductive layer is removed from the non-single crystal semiconductor; and at least one electrode is formed on the semi-amorphous semiconductor.
Claim 11
Dependent Claim
34 words
A manufacturing method according to claim 1 wherein when the non-single crystal semiconductor is formed on the substrate, any one of PN, PIN, PI and NI junctions is formed in the non-single crystal semiconductor.
Claim 12
Independent Claim
79 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 13
Independent Claim
79 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 14
Dependent Claim
36 words
A manufacturing method according to claim 11, wherein the substrate is conductive; and the current is applied to the non-single crystal semiconductor through the conductive substrate and the conductive layer formed on the non-single crystal semiconductor.
Claim 15
Dependent Claim
57 words
A manufacturing method according to claim 11 wherein a conductive layer is formed on the substrate prior to the formation of the non-single crystal semiconductor on the substrate; and the current is applied to the non-single crystal semiconductor through the conductive layer formed on the substrate and the conductive layer formed on the non-single crystal semiconductor layer.
Claim 16
Dependent Claim
46 words
A manufacturing method according to claim 11 wherein when the conductive layer is formed on the non-single crystal semiconductor, at least two conductive layers are formed on the non-single crystal semiconductor; and the current is applied to the non-single crystal semiconductor through the two conductive layers.
Claim 17
Dependent Claim
35 words
A manufacturing method according to claim 11 wherein the conductive layer is retained as an electrode of the semi-amorphous semiconductor device after the application of current to the non-single crystal semiconductor through the conductive layer.
Claim 18
Dependent Claim
50 words
A manufacturing method according to claim 11 wherein, after the application of current to the non-single crystal semiconductor through the conductive layer and the formation of the semi-amorphous semiconductor, the conductive layer is removed from the non-single crystal semiconductor; and at least one electrode is formed on the semi-amorphous semiconductor.
Claim 19
Dependent Claim
34 words
A manufacturing method according to claim 11 wherein when the non-single crystal semiconductor is formed on the substrate, any one of PN, PIN, PI and NI junctions is formed in the non-single crystal semiconductor.
Claim 20
Independent Claim
81 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light and heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 21
Independent Claim
81 words
A method for the manufacture of a semi-amorphous semiconductor device, comprising the steps of: preparing a substrate; forming on the substrate a layer of non-single crystal semiconductor doped with a dangling bond neutralizer; forming at least one conductive layer on the non-single crystal semiconductor; and applying current to the non-single crystal semiconductor through the conductive layer and, at the same time, applying light and heat to the non-single crystal semiconductor, thereby making semi-amorphous a region through which the current passes effectively.
Claim 22
Dependent Claim
53 words
A manufacturing method according to claim 18, wherein the substrate is conductive and light-permeable; the current is applied to the non-single crystal semiconductor through the conductive, light-permeable substrate and the conductive layer formed on the non-single crystal semiconductor; and the light is applied to the non-single crystal semiconductor through the conductive, light-permeable substrate.
Claim 23
Dependent Claim
55 words
A manufacturing method according to claim 18, wherein the substrate is conductive; the conductive layer is light-permeable; the current is applied to the non-single crystal semiconductor through the conductive substrate and the conductive layer formed on the non-single crystal semiconductor; and the light is applied to the non-single crystal semiconductor through the light-permeable conductive layer.
Claim 24
Dependent Claim
88 words
A manufacturing method according to claim 18 wherein a conductive layer is formed on the substrate prior to the formation of the non-single crystal semiconductor on the substrate; the substrate and the conductive layer formed on the substrate are light-permeable; the current is applied to the non-single crystal semiconductor through the light-permeable conductive layer formed on the substrate and the conductive layer formed on the non-single crystal semiconductor layer; and the light is applied to the non-single crystal semiconductor through the light-permeable substrate and the light-permeable conductive layer.
Claim 25
Dependent Claim
81 words
A manufacturing method according to claim 18 wherein a conductive layer is formed on the substrate prior to the formation of the non-single semiconductor on the substrate; the conductive layer formed on the non-single crystal semiconductor is light-permeable; the current is applied to the non-single crystal semiconductor through the conductive layer formed on the substrate and the conductive layer formed on the non-single crystal semiconductor layer; and the light is applied to the non-single crystal semiconductor through the light-permeable conductive layer.
Claim 26
Dependent Claim
63 words
A manufacturing method according to claim 18 wherein when the conductive layer is formed on the non-single crystal semiconductor, at least two conductive layers are formed on the non-single crystal semiconductor; the substrate is light-permeable; the current is applied to the non-single crystal semiconductor through the two conductive layers; and the light is applied to the non-single crystal semiconductor through the light-permeable substrate.
Claim 27
Dependent Claim
68 words
A manufacturing method according to claim 18 wherein when the conductive layer is formed on the non-single crystal semiconductor, at least two conductive layers are formed on the non-single crystal semiconductor; the two conductive layers are light-permeable; the current is applied to the non-single crystal semiconductor through the two light-permeable, conductive layers; and the light is applied to the non-single crystal semiconductor through the two light-permeable conductive layers.
Claim 28
Dependent Claim
35 words
A manufacturing method according to claim 18 wherein the conductive layer is retained as an electrode of the semi-amorphous semiconductor device after the application of current to the non-single crystal semiconductor through the conductive layer.
Claim 29
Dependent Claim
50 words
A manufacturing method according to claim 18 wherein, after the application of current to the non-single crystal semiconductor through the conductive layer and the formation of the semi-amorphous semiconductor, the conductive layer is removed from the non-single crystal semiconductor; and at least one electrode is formed on the semi-amorphous semiconductor.
Claim 30
Dependent Claim
34 words
A manufacturing method according to claim 18 wherein when the non-single crystal semiconductor is formed on the substrate, any one of PN, PIN, PI and NI junctions is formed in the non-single crystal semiconductor.
Claim 31
Dependent Claim
45 words
A manufacturing method according to claim 1 wherein the non-single crystal semiconductor on the substrate is formed of silicon, germanium or an additional semiconductor material compound expressed by Si 3 N 4-x (0<x<4), SiO 2-x (0<x<2), SiC x (0<x<1) or Si x Ge 1-x (0<x<1).
Claim 32
Dependent Claim
33 words
A manufacturing method according to claim 1 wherein the non-single crystal semiconductor on the substrate is formed of a III-V Group compound semiconductor selected from the group consisting of GaAs, BP, or InP.
Claim 33
Dependent Claim
45 words
A manufacturing method according to claim 11 wherein the non-single crystal semiconductor on the substrate is formed of silicon, germanium or an additional semiconductor material compound expressed by Si 3 N 4-x (0<x<4), SiO 2-x (0<x<2), SiC x (0<x<1) or Si x Ge 1-x (0<x<1).
Claim 34
Dependent Claim
33 words
A manufacturing method according to claim 11 wherein the non-single crystal semiconductor on the substrate is formed of a III-V Group compound semiconductor selected from the group consisting of GaAs, BP, or InP.
Claim 35
Dependent Claim
45 words
A manufacturing method according to claim 18 wherein the non-single crystal semiconductor on the substrate is formed of silicon, germanium or an additional semiconductor material compound expressed by Si 3 N 4-x (0<x<4), SiO 2-x (0<x<2), SiC x (0<x<1) or Si x Ge 1-x (0<x<1).
Claim 36
Dependent Claim
33 words
A manufacturing method according to claim 18 wherein the non-single crystal semiconductor on the substrate is formed of a III-V Group compound semiconductor selected from the group consisting of GaAs, PB, or InP.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-15 | 1987-02-14 | 1987-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-15 | 1991-02-14 | 1991-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-15 | 1995-02-14 | 1995-08-16 | $7700.00 | Window Closed / Lapsed |