Patent US5760475A successfully refreshed from Google Patents.
US5760475A
Expired / Lapsed
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Refractory metal-titanium nitride conductive structures
Assignee: GlobalFoundries Inc
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Filing: 1994-11-14
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Granted: 1998-06-02
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Expires: 2014-11-14
Abstract
Abstract The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.
Inventors
- 👤 John Edward Cronin
- 👤 Carter Welling Kaanta
- 👤 Michael Albert Leach
- 👤 Pei-Ing Paul Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/667; H10D64/668; H10W20/033; H10W20/056; H10W20/057; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
173 words
A conductive structure formed on a processed semiconductor substrate, comprising: a first layer of patterned metallurgy; a layer of passivating glass on said first layer of patterned metallurgy, said layer of passivating glass having an upper surface and having an opening therein to expose a portion of said first layer of patterned metallurgy; a continuous layer of Ti-TiN lining only said opening in electrical contact with said first layer of patterned metallurgy, said continuous layer of Ti-TiN having a lower surface consisting of Ti and an upper surface consisting of stoichiometric TiN, at least an upper half of said continuous layer of Ti-TiN consisting of TiN, a layer of tungsten on said continuous layer of Ti-TiN, said tungsten substantially filling the remainder of said opening such that no tungsten is present on said upper surface of said layer of passivating glass; and a second layer of patterned metallurgy in electrical contact with said layer of tungsten and, via said continuous layer of Ti-TiN, in electrical contact with said first layer of patterned metallurgy.
Claim 2
Dependent Claim
173 words
A conductive structure formed on a processed semiconductor substrate, comprising: a first layer of patterned metallurgy; a layer of passivating glass on said first layer of patterned metallurgy, said layer of passivating glass having an upper surface and having an opening therein to expose a portion of said first layer of patterned metallurgy; a continuous layer of Ti-TiN lining only said opening in electrical contact with said first layer of patterned metallurgy, said continuous layer of Ti-TiN having a lower surface consisting of Ti and an upper surface consisting of stoichiometric TiN, at least an upper half of said continuous layer of Ti-TiN consisting of TiN, a layer of tungsten on said continuous layer of Ti-TiN, said tungsten substantially filling the remainder of said opening such that no tungsten is present on said upper surface of said layer of passivating glass; and a second layer of patterned metallurgy in electrical contact with said layer of tungsten and, via said continuous layer of Ti-TiN, in electrical contact with said first layer of patterned metallurgy.
Claim 3
Dependent Claim
20 words
A conductive structure formed on a processed semiconductor substrate according to claim 1 wherein said passivating glass is borophosphosilicate glass.
Claim 4
Dependent Claim
20 words
A conductive structure formed on a processed semiconductor substrate according to claim 1 wherein said passivating glass is phosphosilicate glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |