US4520041A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming metallization structure having flat surface on semiconductor substrate
Assignee: Toshiba Corp
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Filing: 1983-11-03
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Granted: 1985-05-28
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Expires: 2003-11-03
Abstract
Abstract A metallization structure having a substantially flat surface can be formed on a semiconductor substrate by forming first and second insulating layers on the substrate. The second insulating layer is selectively removed to form grooves therein. Then, a metallic material layer is conformably formed. The metallic layer has grooves corresponding to the grooves of the second insulating layer. A flowable polymer is applied to the surface of the resultant structure to form a layer having a flat surface. The polymer layer and the metallic layer are sequentially ion-etched to expose the second insulating layer. Thus, the metallization structure constituted by the remaining metallic layer and the second insulating layer is formed to have a flat surface.
Inventors
- 👤 Masaharu Aoyama
- 👤 Masahiro Abe
- 👤 Takashi Ajima
- 👤 Toshio Yonezawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:31
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/47; H10W20/01; H10W20/031; H10W20/062; H10W20/48
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
315 words
A method for forming a metallization structure having a substantially flat surface on a semiconductor substrate, comprising the steps of: forming a first insulating layer on said semiconductor substrate which has at least one semiconductor region formed therein, said first insulating layer having at least one contact hole through which said at least one semiconductor region is exposed; forming a second insulating layer on said first insulating layer and in said contact hole; selectively removing a predetermined portion of said second insulating layer including the portion in said contact hole formed in said first insulating layer, thereby forming at least one groove having a predetermined pattern corresponding to a desired interconnection pattern in said second insulating layer, said groove being formed to expose at a bottom thereof said contact hole formed in said first insulating layer; forming a continuous metallic material layer on a remaining portion of said second insulating layer and in said groove formed in said second insulating layer and in said contact hole of said first insulating layer, said continuous metallic material layer having at least one groove corresponding to said groove in said second insulating layer; applying an organic polymeric material having a predetermined flowability to said continuous metallic material layer, thereby covering said continuous metallic material layer with said polymeric material so as to form a layer of said polymeric material having a substantially flat surface; and sequentially removing by ion etching said polymeric material layer and said metallic material layer along a direction of thickness thereof until said second insulating layer is exposed, thereby leaving said metallic material in said groove formed in said second insulating layer to provide at least one metallization layer comprising the remaining metallic material and having a surface level which is substantially the same as that of said second insulating layer, said metallization layer being connected to said semiconductor region through said contact hole.
Claim 2
Independent Claim
315 words
A method for forming a metallization structure having a substantially flat surface on a semiconductor substrate, comprising the steps of: forming a first insulating layer on said semiconductor substrate which has at least one semiconductor region formed therein, said first insulating layer having at least one contact hole through which said at least one semiconductor region is exposed; forming a second insulating layer on said first insulating layer and in said contact hole; selectively removing a predetermined portion of said second insulating layer including the portion in said contact hole formed in said first insulating layer, thereby forming at least one groove having a predetermined pattern corresponding to a desired interconnection pattern in said second insulating layer, said groove being formed to expose at a bottom thereof said contact hole formed in said first insulating layer; forming a continuous metallic material layer on a remaining portion of said second insulating layer and in said groove formed in said second insulating layer and in said contact hole of said first insulating layer, said continuous metallic material layer having at least one groove corresponding to said groove in said second insulating layer; applying an organic polymeric material having a predetermined flowability to said continuous metallic material layer, thereby covering said continuous metallic material layer with said polymeric material so as to form a layer of said polymeric material having a substantially flat surface; and sequentially removing by ion etching said polymeric material layer and said metallic material layer along a direction of thickness thereof until said second insulating layer is exposed, thereby leaving said metallic material in said groove formed in said second insulating layer to provide at least one metallization layer comprising the remaining metallic material and having a surface level which is substantially the same as that of said second insulating layer, said metallization layer being connected to said semiconductor region through said contact hole.
Claim 3
Dependent Claim
14 words
A method according to claim 1, wherein said first insulating layer comprises silicon oxide.
Claim 4
Dependent Claim
32 words
A method according to claim 1, wherein said first insulating layer comprises a silicon oxide film formed on said semiconductor substrate and a silicon nitride film formed on said silicon oxide film.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein said second insulating layer comprises phosphosilicate glass.
Claim 6
Dependent Claim
31 words
A method according to claim 1, wherein said metallic material comprises a member selected from the group consisting of aluminum and an alloy thereof, platinum, gold, tungsten, molybdenum, titanium and nickel.
Claim 7
Dependent Claim
23 words
A method according to claim 1, wherein said polymeric material comprises a member selected from the group consisting of polyimide and photoresist materials.
Claim 8
Dependent Claim
16 words
A method according to claim 1, wherein the ion etching is performed by using nonreactive ions.
Claim 9
Dependent Claim
28 words
A method according to claim 7, wherein said nonreactive ions comprise a member selected from the group consisting of argon ions, xenon ions, neon ions, and nitrogen ions.
Claim 10
Dependent Claim
25 words
The method of claim 1 wherein said groove in said metallic material layer includes a small recess which is retained in said remaining metallic material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-05-27 | 1988-11-26 | 1989-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-05-27 | 1992-11-26 | 1993-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-05-27 | 1996-11-26 | 1997-05-28 | $7700.00 | Window Closed / Lapsed |