US5008730A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contact stud structure for semiconductor devices
Assignee: International Business Machines Corp
•
Filing: 1989-12-18
•
Granted: 1991-04-16
•
Expires: 2009-12-18
Abstract
Abstract A method for forming contact studs to connect the substrate component devices to the overlying wiring patterns is disclosed herein. The contact studs are formed by a combination of blanket depositing an adhesive and reactive layer into the contact opening. Onto said adhesive and reactive layer is deposited a seed layer and said contact stud is completed by filling the contact opening with a third metal layer. Preferably, the adhesive and reactive layer is a transition metal and the seen and fillter layers are refractory metals.
Inventors
- 👤 Hung-Chang W. Huang
- 👤 Paul A. Totta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:02
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/01; H10W20/031; H10W20/056
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
164 words
A contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) an insulator layer having an etch-stop layer deposited on said substrate, said insulator layer having at least one opening at the location of one of the semiconductor device components formed in said substrate, (b) a first metal layer deposited in said opening of said insulator layer and lining said opening in said insulator layer, (c) a second metal layer deposited conformably onto said first metal layer, and (d) a third metal layer deposited onto said second metal layer, said second and third metal layers being selected from the group of refractory metals with said third metal layer filling said opening in said insulator layer wherein said second and third metal layers are different from each other, and wherein said first metal layer makes a direct physical contact with the wiring for interconnecting said device components.
Claim 2
Dependent Claim
164 words
A contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) an insulator layer having an etch-stop layer deposited on said substrate, said insulator layer having at least one opening at the location of one of the semiconductor device components formed in said substrate, (b) a first metal layer deposited in said opening of said insulator layer and lining said opening in said insulator layer, (c) a second metal layer deposited conformably onto said first metal layer, and (d) a third metal layer deposited onto said second metal layer, said second and third metal layers being selected from the group of refractory metals with said third metal layer filling said opening in said insulator layer wherein said second and third metal layers are different from each other, and wherein said first metal layer makes a direct physical contact with the wiring for interconnecting said device components.
Claim 3
Dependent Claim
13 words
A contact stud structure according to claim 1 wherein said substrate is silicon.
Claim 4
Dependent Claim
14 words
A contact stud structure according to claim 1 wherein said substrate is monocrystalline silicon.
Claim 5
Dependent Claim
14 words
A contact stud structure according to claim 1 wherein said substrate is polycrystalline silicon.
Claim 6
Dependent Claim
18 words
A contact stud structure according to claim 1 wherein platinum is deposited in said opening on said substrate.
Claim 7
Dependent Claim
46 words
A contact stud structure according to claim 1 wherein said insulator layer is a multi-layered structure comprised of in sequence a bottom layer of SiO 2 , a layer of Si 3 N 4 , said etch-stop layer and a top layer of SiO 2 .
Claim 8
Dependent Claim
29 words
A contact stud structure according to claim 6 wherein said bottom SiO 2 layer is about 1000Å thick and said Si 3 N 4 layer is about 1500Å thick.
Claim 9
Dependent Claim
22 words
A contact stud structure according to claim 6 wherein the aspect ratio of said opening is equal to or greater than 1.
Claim 10
Dependent Claim
23 words
A contact stud structure according to claim 1 wherein said first metal layer is selected from the group consisting of the transition metals.
Claim 11
Dependent Claim
15 words
A contact stud structure according to claim 9 wherein said first metal layer is titanium.
Claim 12
Dependent Claim
29 words
A contact stud structure according to claim 1 wherein said first metal layer is an alloy of one of the transition metals alloyed with one of the refractory metals.
Claim 13
Dependent Claim
19 words
A contact stud structure according to claim 1 wherein one of said second and third metal layers comprises tungsten.
Claim 14
Dependent Claim
14 words
A contact stud structure according to claim 11 wherein said alloy is titanium tungsten.
Claim 15
Dependent Claim
26 words
A contact stud structure according to claim 1 wherein the thickness of said first metal layer is in the range of about 200Å to about 1000Å.
Claim 16
Dependent Claim
19 words
A contact stud structure according to claim 1 wherein the thickness of said second metal layer is about 1000Å.
Claim 17
Dependent Claim
25 words
A contact stud structure according to claim 1 wherein said opening is larger than said one of said semiconductor device components formed in said substrate.
Claim 18
Dependent Claim
28 words
A contact stud structure according to claim 1 wherein said contact stud is large enough to contact a plurality of said semiconductor device components formed in said substrate.
Claim 19
Dependent Claim
155 words
A contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) an insulator layer having an etch-stop layer deposited on said substrate, said insulator layer and said etch-stop layer having at least one opening at the location of one of the semiconductor device components formed in said substrate, (b) a first metal layer deposited in said opening of said insulator layer and lining said opening in said insulator layer, (c) a second metal layer deposited conformably onto said first metal layer, and (d) a third metal layer deposited onto said second metal layer, said second and third metal layers being selected from the group of refractory metals with said third metal layer filling said opening in said insulator layer wherein at least a portion of said first metal layer extends through said opening in said etch-stop layer.
Claim 20
Dependent Claim
155 words
A contact stud structure for the connection of semiconductor device components formed in a substrate to the wiring for interconnecting said device components to other device components comprising: (a) an insulator layer having an etch-stop layer deposited on said substrate, said insulator layer and said etch-stop layer having at least one opening at the location of one of the semiconductor device components formed in said substrate, (b) a first metal layer deposited in said opening of said insulator layer and lining said opening in said insulator layer, (c) a second metal layer deposited conformably onto said first metal layer, and (d) a third metal layer deposited onto said second metal layer, said second and third metal layers being selected from the group of refractory metals with said third metal layer filling said opening in said insulator layer wherein at least a portion of said first metal layer extends through said opening in said etch-stop layer.
Claim 21
Dependent Claim
17 words
The contact stud structure according to claim 18 wherein said etch-stop layer is a suitable inorganic material.
Claim 22
Dependent Claim
19 words
The contact stud structure according to claim 18 wherein a second insulator layer is deposited over said etch-stop layer.
References Cited (Backward Citations)
US3911562A
Cited
US4305974A
Cited
US4244775A
Cited
US4367119A
Cited
US4520041A
Cited
US4536249A
Cited
US4486946A
Cited
US4600624A
Cited
US4532702A
Cited
US4582563A
Cited
US4720908A
Cited
US4751197A
Cited
EP0224013A2
Cited
US4789648A
Cited
US4689113A
Cited
US4795722A
Cited
EP0279588A2
Cited
US4884123A
Cited
US4800176A
Cited
US4822753A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-04-15 | 1994-10-15 | 1995-04-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-04-15 | 1998-10-15 | 1999-04-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-04-15 | 2002-10-15 | 2003-04-16 | $7700.00 | Window Closed / Lapsed |