Abstract A method for producing an NPN semiconductor device which has a titanium-tungsten barrier metal only in the N type contact windows is disclosed. A semiconductor wafer first undergoes the washed emitter process with the result that the N type collector and emitter contact windows are exposed to bare silicon and the P type contact windows are covered by a layer of silicon dioxide. A layer of titanium-tungsten alloy is deposited on the surface of the wafer. The titanium-tungsten layer is etched out of the P type contact regions using standard photolithographic techniques. The underlying layer of silicon dioxide in the P type contact regions is then also etched away. A layer of aluminum is then deposited across the surface of the wafer. The conductor interconnect photolithography is used to etch away all undesired aluminum. The remaining portions of the titanium-tungsten layer, not covered by aluminum signal lines, are then also etched away. This results in a structure which has titanium-tungsten barrier metal sandwiched between the aluminum signal lines and the silicon in the N type collector and emitter contact windows, but not in the P type contact windows.
A method for selectively applying barrier metal to the surface of a NPN type semiconductor wafer, comprising the steps of: (a) processing the silicon wafer to produce an NPN transistor device having emitter contact windows exposed to N type silicon, collector contact windows exposed to N type silicon, and P type contact windows covered by a layer of silicon dioxide; (b) depositing a layer of an alloy of titanium-tungsten on the semiconductor surface; (c) etching the titanium-tungsten layer out of the P type contact windows; (d) etching the silicon dioxide layer out of the P type contact windows to expose the P type silicon; (e) depositing a metalization layer of aluminum on the semiconductor wafer; (f) using conductor interconnect photolithography to etch away the undesired portions of the aluminum layer to define the aluminum signal lines; and (g) etching away those portions of the titanium-tungsten layer not covered by the aluminum signal lines whereby titanium-tungsten provides a barrier metal between the aluminum signal lines and the silicon of the N type emitter and collector contact windows, and wherein the aluminum signal lines connect directly to the P type silicon contact windows.
Claim 2
Independent Claim
191 words
A method for selectively applying barrier metal to the surface of a NPN type semiconductor wafer, comprising the steps of: (a) processing the silicon wafer to produce an NPN transistor device having emitter contact windows exposed to N type silicon, collector contact windows exposed to N type silicon, and P type contact windows covered by a layer of silicon dioxide; (b) depositing a layer of an alloy of titanium-tungsten on the semiconductor surface; (c) etching the titanium-tungsten layer out of the P type contact windows; (d) etching the silicon dioxide layer out of the P type contact windows to expose the P type silicon; (e) depositing a metalization layer of aluminum on the semiconductor wafer; (f) using conductor interconnect photolithography to etch away the undesired portions of the aluminum layer to define the aluminum signal lines; and (g) etching away those portions of the titanium-tungsten layer not covered by the aluminum signal lines whereby titanium-tungsten provides a barrier metal between the aluminum signal lines and the silicon of the N type emitter and collector contact windows, and wherein the aluminum signal lines connect directly to the P type silicon contact windows.
Claim 3
Dependent Claim
44 words
The process of claim 1 wherein a washed emitter process is used to produce said NPN transistor device having said N type emitter and collector contact windows exposed to bare silicon, and said P type contact windows covered by a layer of silicon dioxide.
Claim 4
Dependent Claim
17 words
The process of claim 1 wherein said P type contact windows are NPN transistor base contact windows.