US3108359A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating transistors
Assignee: Fairchild Semiconductor Corp
•
Filing: 1959-06-30
•
Granted: 1963-10-29
•
Expires: 1979-06-30
Abstract
No abstract record available.
Inventors
- 👤 Gordon E Moore
- 👤 Robert N Noyce
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:47
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10P95/00; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/033
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
146 words
THE METHOD OF FABRICATING SEMICONDUCTOR DEVICES, WHICH COMPRISES OXIDIZING THE SURFACE OF A WAFER OF SEMICONDUCTOR MATERIAL TO FORM AN OXIDE FILM THEREON, EXPOSING ISLANDS OF UNOXIDIZED SEMICONDUCTOR MATERIAL BY REMOVING PORTIONS OF SAID FILM BY PHOTOENGRAVING, FORMING P-N JUNCTIONS SEPARATING A SURFACE LAYER OF EACH ISLAND FROM THE SUBJACENT SEMICONDUCTOR MATERIAL BY DEPOSITING ONTO SAID ISLANDS A DIFFUSANT TO WHICH SAID FILM IS IMPERVIOUS AND DIFFUSING SUCH DIFFUSANT INTO SAID SEMICONDUCTOR MATERIAL AT AN ELEVATED TEMPERATURE IN AN OXIDIZING ATMOSPHERE WHEREBY THE SURFACE IS REOXIDIZED, DEOXIDING CONTACT AREAS ON SAID ISLANDS AND ON ADJACENT PORTIONS OF THE WAFER SURFACE, DEPOSITING AMETAL COATING ON THE SURFACE INCLUDING SAID CONTENT AREAS, AND REMOVING PORTIONS OF SAID COATING BY PHOTOENGRAVING, LEAVING SEPARATE METALLIC CONTACTS OF THE SAME METAL ON EACH OF SAID ISLANDS AND ON THE MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE ADJACENT TO EACH OF SAID ISLANDS.
Claim 2
Independent Claim
146 words
THE METHOD OF FABRICATING SEMICONDUCTOR DEVICES, WHICH COMPRISES OXIDIZING THE SURFACE OF A WAFER OF SEMICONDUCTOR MATERIAL TO FORM AN OXIDE FILM THEREON, EXPOSING ISLANDS OF UNOXIDIZED SEMICONDUCTOR MATERIAL BY REMOVING PORTIONS OF SAID FILM BY PHOTOENGRAVING, FORMING P-N JUNCTIONS SEPARATING A SURFACE LAYER OF EACH ISLAND FROM THE SUBJACENT SEMICONDUCTOR MATERIAL BY DEPOSITING ONTO SAID ISLANDS A DIFFUSANT TO WHICH SAID FILM IS IMPERVIOUS AND DIFFUSING SUCH DIFFUSANT INTO SAID SEMICONDUCTOR MATERIAL AT AN ELEVATED TEMPERATURE IN AN OXIDIZING ATMOSPHERE WHEREBY THE SURFACE IS REOXIDIZED, DEOXIDING CONTACT AREAS ON SAID ISLANDS AND ON ADJACENT PORTIONS OF THE WAFER SURFACE, DEPOSITING AMETAL COATING ON THE SURFACE INCLUDING SAID CONTENT AREAS, AND REMOVING PORTIONS OF SAID COATING BY PHOTOENGRAVING, LEAVING SEPARATE METALLIC CONTACTS OF THE SAME METAL ON EACH OF SAID ISLANDS AND ON THE MATERIAL OF THE OPPOSITE CONDUCTIVITY TYPE ADJACENT TO EACH OF SAID ISLANDS.
References Cited (Backward Citations)
US2680220A
Cited
US2695852A
Cited
US2793420A
Cited
US2858489A
Cited
US3025589A
Cited
US2806983A
Cited
US2845375A
Cited
US2984775A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-10-28 | 1967-04-29 | 1967-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-10-28 | 1971-04-29 | 1971-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-10-28 | 1975-04-29 | 1975-10-29 | $7700.00 | Window Closed / Lapsed |