US2845375A
Expired / Lapsed
US
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Method for making fused junction semiconductor devices
Assignee: TDK Micronas GmbH
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Filing: 1956-06-11
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Granted: 1958-07-29
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Expires: 1976-06-11
Abstract
No abstract record available.
Inventors
- 👤 Andre R Gobat
- 👤 Henry G Nordlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:15
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W76/161; H10P; H10P95/00; H10W72/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
68 words
IN A METHOD FOR PREPARING A P-N JUNCTION IN A SEMICONDUCTOR UNIT OF SUBSTANTIALLY UNIFORM RESISTIVITY WHEREIN SAID UNIT COMPRISES FIRST AND SECOND PORTIONS WITH AN INTERMEDIATE PROTION THEREBETWEEN OF REDUCED CROSS-SECTIONAL AREA, WHEREBY THE TEMPERATURE OF SAID INTERMEDIATE PROTION WILL BE ELEVATED ABOVE THAT OF SAID FIRST AND SECOND PORTIONS WHEN AN ELECTRIC CURRENT IS PASSED THROUGH SAID UNIT; THE STEPS COMPRISING MAKING CONNECTIONS TO SAID FIRST
Claim 2
Dependent Claim
68 words
IN A METHOD FOR PREPARING A P-N JUNCTION IN A SEMICONDUCTOR UNIT OF SUBSTANTIALLY UNIFORM RESISTIVITY WHEREIN SAID UNIT COMPRISES FIRST AND SECOND PORTIONS WITH AN INTERMEDIATE PROTION THEREBETWEEN OF REDUCED CROSS-SECTIONAL AREA, WHEREBY THE TEMPERATURE OF SAID INTERMEDIATE PROTION WILL BE ELEVATED ABOVE THAT OF SAID FIRST AND SECOND PORTIONS WHEN AN ELECTRIC CURRENT IS PASSED THROUGH SAID UNIT; THE STEPS COMPRISING MAKING CONNECTIONS TO SAID FIRST
References Cited (Backward Citations)
FR1038658A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-07-28 | 1962-01-27 | 1962-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-07-28 | 1966-01-27 | 1966-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-07-28 | 1970-01-27 | 1970-07-29 | $7700.00 | Window Closed / Lapsed |